FCP125N60E ON Semiconductor MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
ON Semiconductor FCP125N60E is a 600 V, 29 A N-channel power MOSFET with 0.125 Ω RDS(on) and built-in body diode in a TO-220AB 3-pin package. Features 720 mJ avalanche energy rating for rugged PFC and switching power supply designs. From $2.20 in stock with worldwide shipping.
- Manufacturer
- ON Semiconductor
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- FCP125N60E Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.1400(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage and 29 A continuous drain current with 0.125 Ω RDS(on) for low conduction losses in high-power switching
- 720 mJ unclamped inductive switching (avalanche) energy rating (Eas) delivering superior robustness in PFC and motor drive circuits
- Integrated body diode in a standard TO-220AB package enabling drop-in replacement in existing power converter designs without layout changes
Applications
The FCP125N60E is a primary switch in AC-DC power factor correction (PFC) boost converters, LLC resonant half-bridge converters, and motor drive inverters operating from rectified 85–265 V AC mains. Its 600 V rating, 29 A drain current, and 720 mJ avalanche capability make it a rugged choice for industrial SMPS, solar inverters, and battery charger designs targeting 200–500 W output power.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | 340AT |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 720mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 29A |
| Drain-source On Resistance-Max | 0.125Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 278W |
| Pulsed Drain Current-Max (IDM) | 87A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 278ns |
| Turn-on Time-Max (ton) | 106ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What makes FCP125N60E suitable for AC-DC PFC converter topologies operating from universal mains input?
The FCP125N60E features a 600 V breakdown voltage and 29 A continuous drain current with 0.125 Ω RDS(on). These parameters directly support a PFC boost converter switching from rectified 85–265 V AC lines, where the switch must block up to 400 V DC bus voltage under peak mains conditions while sustaining high peak currents during inductor charging phases.
How does the 720 mJ avalanche energy rating of FCP125N60E protect motor drive designs during load transients?
When a motor drive experiences a sudden load disconnect or regenerative braking event, the MOSFET must absorb the energy stored in inductive components. The FCP125N60E's 720 mJ avalanche energy rating (Eas) allows it to safely clamp these transient voltages above 600 V without destructive breakdown, reducing the need for external transient voltage suppression in 400 V bus motor inverter designs.
Is FCP125N60E a suitable TO-220AB replacement for a 500 V, 20 A N-channel MOSFET with higher RDS(on)?
Yes. The FCP125N60E in TO-220AB offers a 600 V / 29 A rating with 0.125 Ω RDS(on), which improves both voltage headroom and conduction losses versus a 500 V, 20 A part with higher RDS(on). Pin compatibility with the TO-220AB footprint means no PCB layout changes are required, and the lower RDS(on) reduces heat dissipation at the same load current, potentially eliminating the need for a larger heatsink.
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About ON Semiconductor
ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.2000 | $6.20 |
| 10+ | $2.3960 | $23.96 |
| 100+ | $2.3720 | $237.20 |
| 800+ | $2.3482 | $1878.56 |
| 1000+ | $2.2800 | $2280.00 |
| 10000+ | $2.1400 | $21400.00 |
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