F3L200R12W2H3_B11 Infineon Integrated Circuit (Other) In Stock
Infineon F3L200R12W2H3_B11 is a high-power 1200V, 200A IGBT module with isolated case connection and 4 switching elements, optimized for industrial drives and renewable energy converters. Available from stock worldwide with fast shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 38
- Lifecycle
- ACTIVE
- Datasheet
- F3L200R12W2H3_B11 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1200V collector-emitter voltage with 200A maximum collector current for high-power industrial inverter designs
- 4-element complex configuration in an isolated case enables flexible 3-phase bridge or H-bridge topologies
- Gate-emitter threshold voltage up to 6.45V with ±20V gate drive compatibility for robust switching control
- Isolated case connection eliminates need for external insulation pads, simplifying heatsink mounting in power assemblies
Applications
The F3L200R12W2H3_B11 is designed for high-power applications such as industrial motor drives, solar inverters, and wind turbine converters where a 1200V, 200A IGBT module must switch large currents reliably. Its 4-element complex configuration supports 3-phase bridge inverter topologies used in variable-frequency drives rated from tens to hundreds of kilowatts. Energy storage systems and traction drives in electric vehicles and rail applications also leverage this module's high current density and isolated case for thermally efficient power stage designs.
Specifications
| YTEOL | 5 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 200A |
| Collector-Emitter Voltage-Max | 1200V |
| Configuration | COMPLEX |
| Gate-Emitter Thr Voltage-Max | 6.45V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-XUFM-X32 |
| Number of Elements | 4 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 600W |
| Reference Standard | UL APPROVED |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 480ns |
| Turn-on Time-Nom (ton) | 190ns |
| VCEsat-Max | 1.75V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Germany, Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the maximum voltage and current ratings of the F3L200R12W2H3_B11 IGBT module?
The F3L200R12W2H3_B11 is rated for 1200V collector-emitter voltage and 200A maximum collector current, enabling it to handle high-power switching demands in industrial motor drives and renewable energy inverters operating from 600V to 1000V DC bus rails.
How many IGBT switching elements are integrated in the F3L200R12W2H3_B11, and what circuit topologies does this support?
The module integrates 4 switching elements in a complex configuration, supporting 3-phase half-bridge or full H-bridge inverter topologies; this makes it directly applicable to 3-phase AC motor drives and DC-AC converter stages in systems rated at 200A continuous output current.
What gate drive voltage range is compatible with the F3L200R12W2H3_B11?
The F3L200R12W2H3_B11 accepts gate-emitter voltages up to ±20V with a threshold voltage of up to 6.45V, making it compatible with standard IGBT gate drivers that supply +15V on and -8V to -15V off bias, a common configuration in industrial inverter gate drive designs.
Does the F3L200R12W2H3_B11 require an external insulation pad when mounting to a heatsink?
No, the F3L200R12W2H3_B11 uses an isolated case connection, meaning the module baseplate is electrically isolated from the internal devices, so no additional insulation pad is required between the module and the heatsink, simplifying thermal management assembly and reducing total thermal resistance.
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