DMP2215L-7 Diodes Inc. MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock
Diodes Inc. DMP2215L-7 is a P-channel enhancement-mode MOSFET in a SOT-23 3-pin package rated at -20V and 2.7A maximum drain current with 100mΩ on-resistance for efficient load switching. Compact SOT-23 footprint and built-in body diode suit space-constrained power management and load switch designs. Available in stock worldwide with competitive pricing and fast shipping.
- Manufacturer
- Diodes Inc.
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- DMP2215L-7 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel enhancement MOSFET with -20V breakdown and 2.7A continuous drain current for compact load switch and power management designs
- 100 mΩ maximum RDS(on) in a SOT-23 3-pin package enables high-efficiency switching with minimal conduction loss
- Built-in body diode with single MOSFET configuration supports synchronous rectification and reverse-polarity protection in battery-powered designs
Applications
The DMP2215L-7 P-channel MOSFET is widely used in portable electronics, wearables, and IoT devices requiring a compact -20V load switch or reverse-polarity protection circuit in a tiny SOT-23 package. Its 100mΩ RDS(on) minimizes power dissipation in 2.7A switched power rails, extending battery life in handheld instruments and wireless sensors. Single-MOSFET configuration with integrated body diode simplifies PCB layout for low-side and high-side switch applications.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 3 |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 2.7A |
| Drain-source On Resistance-Max | 0.1Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.08W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for DMP2215L-7:
suggested
Frequently Asked Questions
For a 2A battery-powered load switch, how much power does DMP2215L-7 dissipate at full load given its 100 mΩ RDS(on)?
At 2A continuous drain current with a maximum RDS(on) of 100 mΩ, the DMP2215L-7 dissipates P = I² × R = 4 × 0.1 = 400 mW in the worst case. In a typical SOT-23 package with a thermal resistance of approximately 300°C/W junction-to-ambient, this translates to a junction temperature rise of about 120°C above ambient — confirming that operation below 1.5A is necessary at 85°C ambient to stay within the maximum junction temperature limit.
How does the SOT-23 package size of DMP2215L-7 compare to alternatives like SOT-363 for high-density power designs?
The SOT-23 (3-pin) package of DMP2215L-7 occupies approximately 1.3 mm × 2.9 mm footprint on the PCB, smaller than the 6-pin SOT-363 (2.0 mm × 2.1 mm with finer pitch), but the SOT-363 can house two independent MOSFETs in the same or smaller board area for dual-channel switch designs. For single-channel -20V P-channel switching at up to 2.7A, DMP2215L-7 in SOT-23 offers the minimum component count and footprint.
Which gate drive voltage is needed to fully enhance the DMP2215L-7, and how does it suit 3.3V logic systems?
The DMP2215L-7 is specified with RDS(on) of 100 mΩ at a gate-to-source voltage (VGS) of -4.5V, making it compatible with 5V logic-level gate drivers where VGS can reach -4.5V to -5V. For 3.3V systems the effective VGS may be limited to approximately -2.8V to -3.3V when switching from a 3.3V rail, which typically increases RDS(on) by 30 to 50%, so designers should verify conduction loss at the reduced gate drive before finalizing the design.
In what scenario would DMP2215L-7 serve as a lower-cost alternative to a discrete P-channel MOSFET with an external body diode?
DMP2215L-7 integrates a body diode within its single SOT-23 package, eliminating the need for a separate Schottky diode in reverse-polarity protection or freewheeling applications. Compared to a discrete P-channel MOSFET without an integrated diode, the DMP2215L-7 saves one component, reduces BOM cost by approximately 0.05 to 0.15 USD per circuit, and eliminates one additional PCB pad pair on an already constrained layout, making it the preferred single-component solution for -20V, 2.7A switching nodes.
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