DMN65D8L-7 Diodes Inc. MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
Diodes Inc. DMN65D8L-7 is a single N-channel enhancement MOSFET in a 3-pin SOT-23 package rated at 60 V drain-source breakdown voltage and 310 mA maximum drain current with a 4 Ω on-resistance. It features an integrated body diode and high-reliability construction for use in low-power switching and load-switch circuits. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Diodes Inc.
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- DMN65D8L-7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.0285(MOQ 1)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of DMN65D8L-7?
- 60 V drain-source breakdown voltage and 310 mA maximum drain current in a compact 3-pin SOT-23 package for space-constrained low-power switching circuits
- 4 Ω maximum drain-source on-resistance limits conduction losses in load switch and signal routing applications at milliamp-level currents
- Integrated body diode enables bidirectional current handling without an external freewheeling diode, reducing BOM count in inductive load switching stages
- High-reliability rated N-channel MOSFET with RoHS-compliant (Pb-free) construction suitable for consumer, industrial, and automotive accessory applications
What is DMN65D8L-7 used for?
The DMN65D8L-7 is designed for low-side switching of resistive and inductive loads in battery-powered portable electronics, LED driver circuits, and small motor control applications requiring a compact SOT-23 form factor. Its 60 V breakdown rating and 310 mA current capacity make it suitable as a signal-level switch in relay driver circuits, power sequencing logic, and general-purpose load switching on 12 V to 48 V rails. The integrated body diode eliminates the need for a separate freewheeling diode when driving inductive loads such as solenoids and small relay coils.
What are the specifications of DMN65D8L-7?
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 7 |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 0.27A |
| Drain-source On Resistance-Max | 4Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the DMN65D8L-7 datasheet?
DMN65D8L-7 Datasheet DownloadOfficial datasheet from Diodes Inc.
What are equivalent replacements for DMN65D8L-7?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the DMN65D8L-7 and what load types can it switch?
The DMN65D8L-7 is rated for 60 V drain-source breakdown and 310 mA maximum drain current with a 4 Ω on-resistance. These parameters make it suitable for switching resistive loads up to approximately 18 V at 300 mA and for low-current inductive loads such as relay coils and small solenoids in 12 V to 48 V systems, aided by the integrated body diode.
How does the integrated body diode in the DMN65D8L-7 simplify inductive load switching circuit design?
The integrated body diode in the DMN65D8L-7 provides a built-in freewheeling path for reverse current when an inductive load such as a relay coil or solenoid is switched off. This eliminates the need for an external Schottky diode in the circuit, reducing component count, PCB area, and BOM cost in designs with multiple switching nodes.
Why is the SOT-23 package of the DMN65D8L-7 preferred for high-density PCB designs?
The SOT-23 package occupies approximately 2.9 mm x 1.3 mm of PCB area with a 3-pin footprint, making it one of the smallest available discrete MOSFET packages. This enables placement of multiple load-switch circuits in a few square centimeters of board space, which is critical in compact IoT modules, wearable devices, and handheld instruments where board area is severely constrained.
When should a designer consider the DMN65D8L-7 as an alternative to a higher-current N-channel MOSFET?
The DMN65D8L-7 is the preferred choice when the switched load current is below 270 mA and the supply rail is 60 V or lower, and when PCB space is limited to a 3-pin SOT-23 footprint. For loads requiring above 500 mA, a designer would need to select a higher-current device, such as a SOT-23 MOSFET with 500 mA to 1 A rating and correspondingly lower on-resistance below 1 Ω.
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Why Buy from FindMyChip
About Diodes Inc.
Diodes Inc. is a leading electronic component manufacturer. FindMyChip sources Diodes Inc. ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.0600 | $0.06 |
| 5+ | $0.0590 | $0.29 |
| 10+ | $0.0570 | $0.57 |
| 500+ | $0.0460 | $23.00 |
| 1000+ | $0.0403 | $40.33 |
| 3000+ | $0.0285 | $85.50 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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