DMN65D8L-7 Diodes Inc. MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock

Diodes Inc. DMN65D8L-7 is a single N-channel enhancement MOSFET in a 3-pin SOT-23 package rated at 60 V drain-source breakdown voltage and 310 mA maximum drain current with a 4 Ω on-resistance. It features an integrated body diode and high-reliability construction for use in low-power switching and load-switch circuits. Available from authorized distributors with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
DMN65D8L-7SOT23 (3-Pin)
Quick Facts
Manufacturer
Diodes Inc.
Package
SOT23 (3-Pin)
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.0285(MOQ 1)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 60 V drain-source breakdown voltage and 310 mA maximum drain current in a compact 3-pin SOT-23 package for space-constrained low-power switching circuits
  • 4 Ω maximum drain-source on-resistance limits conduction losses in load switch and signal routing applications at milliamp-level currents
  • Integrated body diode enables bidirectional current handling without an external freewheeling diode, reducing BOM count in inductive load switching stages
  • High-reliability rated N-channel MOSFET with RoHS-compliant (Pb-free) construction suitable for consumer, industrial, and automotive accessory applications

Applications

The DMN65D8L-7 is designed for low-side switching of resistive and inductive loads in battery-powered portable electronics, LED driver circuits, and small motor control applications requiring a compact SOT-23 form factor. Its 60 V breakdown rating and 310 mA current capacity make it suitable as a signal-level switch in relay driver circuits, power sequencing logic, and general-purpose load switching on 12 V to 48 V rails. The integrated body diode eliminates the need for a separate freewheeling diode when driving inductive loads such as solenoids and small relay coils.

Specifications

Pbfree CodeYes
Factory Lead Time12Weeks
YTEOL7
Additional FeatureHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60V
Drain Current-Max (ID)0.27A
Drain-source On Resistance-Max4Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PDSO-G3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Reference StandardAEC-Q101
Surface MountYES
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSOT23 (3-Pin)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

DMN65D8L-7 Datasheet Download

Official datasheet from Diodes Inc.

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the DMN65D8L-7 and what load types can it switch?

The DMN65D8L-7 is rated for 60 V drain-source breakdown and 310 mA maximum drain current with a 4 Ω on-resistance. These parameters make it suitable for switching resistive loads up to approximately 18 V at 300 mA and for low-current inductive loads such as relay coils and small solenoids in 12 V to 48 V systems, aided by the integrated body diode.

How does the integrated body diode in the DMN65D8L-7 simplify inductive load switching circuit design?

The integrated body diode in the DMN65D8L-7 provides a built-in freewheeling path for reverse current when an inductive load such as a relay coil or solenoid is switched off. This eliminates the need for an external Schottky diode in the circuit, reducing component count, PCB area, and BOM cost in designs with multiple switching nodes.

Why is the SOT-23 package of the DMN65D8L-7 preferred for high-density PCB designs?

The SOT-23 package occupies approximately 2.9 mm x 1.3 mm of PCB area with a 3-pin footprint, making it one of the smallest available discrete MOSFET packages. This enables placement of multiple load-switch circuits in a few square centimeters of board space, which is critical in compact IoT modules, wearable devices, and handheld instruments where board area is severely constrained.

When should a designer consider the DMN65D8L-7 as an alternative to a higher-current N-channel MOSFET?

The DMN65D8L-7 is the preferred choice when the switched load current is below 270 mA and the supply rail is 60 V or lower, and when PCB space is limited to a 3-pin SOT-23 footprint. For loads requiring above 500 mA, a designer would need to select a higher-current device, such as a SOT-23 MOSFET with 500 mA to 1 A rating and correspondingly lower on-resistance below 1 Ω.

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About Diodes Inc.

Diodes Inc. is a leading electronic component manufacturer. FindMyChip sources Diodes Inc. ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
From $0.0285
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$0.0600$0.06
5+$0.0590$0.29
10+$0.0570$0.57
500+$0.0460$23.00
1000+$0.0403$40.33
3000+$0.0285$85.50
pcs
Unit price: $0.0600 · Total: $0.06

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy