DMN6040SK3Q-13 Diodes Inc. MOSFET (N-Channel) (Other) In Stock
Diodes Inc. DMN6040SK3Q-13 is a high-reliability N-channel enhancement mode MOSFET rated at 60 V drain-source breakdown voltage, 20 A maximum drain current, and 40 milliohm on-resistance. It includes a built-in diode and 10 mJ avalanche energy rating for robust switching in automotive and industrial power circuits. Available from stock with worldwide shipping.
- Manufacturer
- Diodes Inc.
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- DMN6040SK3Q-13 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2908(MOQ 100)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 60 V drain-source breakdown voltage (BVDSS) with 20 A continuous drain current rating suits automotive and industrial motor drive applications
- Ultra-low 40 milliohm (0.04 Ω) maximum drain-source on-resistance minimizes conduction losses in high-efficiency switching converters
- 10 mJ avalanche energy rating (Eas) provides built-in robustness against inductive switching transients in motor control and DC-DC applications
- Built-in diode with drain case connection enables compact synchronous rectifier and H-bridge designs without discrete freewheeling diode
Applications
DMN6040SK3Q-13 is suited for automotive motor drive circuits, synchronous buck converters, and DC load switches in 12 V to 48 V vehicle electrical systems where a 60 V, 20 A N-channel MOSFET with low 40 milliohm on-resistance is required. Its high-reliability (AEC-Q101 style) qualification makes it appropriate for under-hood electronic control units (ECUs) and body control modules that must withstand temperatures from -40 degrees C to 150 degrees C. The built-in freewheeling diode and 10 mJ avalanche rating further simplify circuit design in inductive load switching and H-bridge motor control applications.
Specifications
| Factory Lead Time | 12Weeks |
| Date Of Intro | 2019-01-07 |
| YTEOL | 5 |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 10mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 44pF |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 42W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Reference Standard | AEC-Q101; MIL-STD-202 |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 3 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for DMN6040SK3Q-13:
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Frequently Asked Questions
What is the drain-source on-resistance of DMN6040SK3Q-13, and how does it affect power loss in a 20 A switching circuit?
DMN6040SK3Q-13 has a maximum drain-source on-resistance (RDS(on)) of 40 milliohms (0.04 Ω) at the specified gate voltage. At a continuous drain current of 20 A, the conduction power loss is calculated as I² × RDS(on) = 400 × 0.04 = 16 W maximum, which is manageable with appropriate thermal management. In a 48 V synchronous buck converter operating at 10 A, the actual RDS(on) may be closer to 25 milliohms typical, resulting in less than 2.5 W conduction loss and efficiency above 95 percent at full load.
How does DMN6040SK3Q-13's 10 mJ avalanche energy rating protect a motor drive circuit from inductive spikes?
DMN6040SK3Q-13 is rated for a single-pulse avalanche energy (Eas) of 10 mJ, meaning the device can safely absorb this amount of energy from an inductive load transient during turn-off without sustaining damage. In a 12 V motor drive switching at 20 kHz with a 100 µH motor winding, the inductive energy stored at 20 A is 0.5 × 100e-6 × 400 = 20 mJ per full current cycle, so appropriate snubber design is still required. However, the 10 mJ avalanche rating provides a valuable safety margin against occasional transient spikes that exceed the gate drive snubber clamp.
Is DMN6040SK3Q-13 suitable for automotive under-hood applications, and what temperature range does it support?
DMN6040SK3Q-13 is designed for high-reliability applications, with the AEC-Q101-style qualification indicated by the Q suffix in the part number. It operates across a junction temperature range of -40 degrees C to 150 degrees C, covering both cold-start arctic conditions and the peak under-hood temperatures encountered near automotive engine control units. The 60 V BVDSS rating provides adequate margin above the 48 V battery systems in mild hybrid vehicles (MHEV), while the 40 milliohm RDS(on) keeps thermal losses low in continuously switching circuits.
What is the significance of the built-in diode in DMN6040SK3Q-13, and how does it simplify H-bridge motor control circuit design?
DMN6040SK3Q-13 includes a built-in body diode with drain case connection, which serves as an integrated freewheeling diode for inductive load current during MOSFET off-time. In an H-bridge motor controller driving a 12 V DC motor at 20 A, this eliminates the need for 4 discrete Schottky freewheeling diodes, reducing component count by at least 4 parts per bridge. The built-in diode also ensures that inductive kickback currents up to 20 A find a low-impedance return path within the package, reducing the risk of voltage spikes exceeding the 60 V BVDSS rating on the drain node.
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About Diodes Inc.
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Diode
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.5497 | $54.97 |
| 500+ | $0.4276 | $213.78 |
| 1000+ | $0.3882 | $388.20 |
| 2500+ | $0.3037 | $759.25 |
| 10000+ | $0.2976 | $2976.30 |
| 12500+ | $0.2908 | $3634.62 |
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