DMN601K-7 Diodes Inc. MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
Diodes Inc. DMN601K-7 is an N-channel MOSFET in SOT-23 3-pin package with 60V drain-source breakdown voltage, 0.3A maximum drain current, and 2Ω on-resistance with integrated protection diode. Available in stock worldwide.
- Manufacturer
- Diodes Inc.
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- DMN601K-7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.0135(MOQ 100)
- Temp Range
- -65.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of DMN601K-7?
- 60V drain-source breakdown voltage with integrated protection diode in a compact SOT-23 3-pin package
- 2Ω maximum drain-source on-resistance (RDS(on)) for low conduction loss in small-signal switching
- 0.3A drain current rating with 5pF feedback capacitance (Crss) for fast switching transitions
- Single N-channel configuration in SOT-23 — ideal for space-constrained load switch and gate drive designs
What is DMN601K-7 used for?
The DMN601K-7 is suited for low-power load switching, small-signal amplification, and gate drive applications in portable consumer electronics and IoT devices operating from 3V to 12V supplies. Its integrated protection diode and 60V breakdown rating make it appropriate for inductive load switching in solenoid drivers and relay coil control circuits. The SOT-23 package and 2Ω RDS(on) also suit battery management protection circuits and USB power switch designs in handheld equipment.
What are the specifications of DMN601K-7?
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 7 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 0.3A |
| Drain-source On Resistance-Max | 2Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5pF |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.35W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the DMN601K-7 datasheet?
DMN601K-7 Datasheet DownloadOfficial datasheet from Diodes Inc.
What are equivalent replacements for DMN601K-7?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What continuous load current can the DMN601K-7 switch in a 5V USB power control circuit?
The DMN601K-7 has a maximum drain current rating of 0.3A. In a 5V USB low-power application, this allows switching up to 1.5W of load power continuously. With a 2Ω RDS(on), conduction loss at 0.3A is 0.18W — well within the SOT-23 thermal dissipation capability of approximately 0.15W to 0.35W depending on PCB copper area and ambient temperature.
How does the integrated protection diode in the DMN601K-7 benefit inductive load switching applications?
The built-in protection diode clamps inductive flyback voltage spikes that occur when switching inductive loads such as solenoids, relays, or small DC motors. Without this diode, the drain voltage can spike well above the 60V breakdown limit during turn-off. The integrated diode provides a low-impedance path to recirculate inductive energy, protecting the MOSFET and eliminating the need for an external Schottky freewheeling diode in many designs.
For a 12V battery-powered IoT node, is the DMN601K-7 a suitable gate-controlled load switch?
Yes. The DMN601K-7's 60V breakdown rating covers 12V systems with significant margin, and the 2Ω RDS(on) at full gate drive produces only 18mW of dissipation at 95mA — well within SOT-23 limits. Gate threshold voltage for N-channel MOSFETs in the SOT-23 package typically ranges from 0.8V to 2.5V, making the device compatible with 3.3V microcontroller GPIO drive signals without level-shifting circuitry.
How does the DMN601K-7 compare to a 2N7002 for a 60V signal switching application?
Both devices use the SOT-23 3-pin package and target 60V N-channel MOSFET applications, but the DMN601K-7 offers an integrated protection diode that the standard 2N7002 lacks. The 2N7002 typically has higher RDS(on) of around 5Ω to 7.5Ω compared to the DMN601K-7's 2Ω maximum, giving the DMN601K-7 lower conduction losses at equal drain current, while the built-in diode reduces external component count for inductive switching.
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Why Buy from FindMyChip
About Diodes Inc.
Diodes Inc. is a leading electronic component manufacturer. FindMyChip sources Diodes Inc. ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.0783 | $7.83 |
| 500+ | $0.0571 | $28.54 |
| 850+ | $0.0240 | $20.40 |
| 3000+ | $0.0180 | $54.00 |
| 7500+ | $0.0150 | $112.50 |
| 12000+ | $0.0135 | $161.40 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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