DMG6602SVTX-7Alternatives & Equivalent Parts

About DMG6602SVTX-7

DMG6602SVTX-7 is a MOSFET (N-Channel) component manufactured by Diodes Inc.. It comes in a SOT23 (6-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterDMG6602SVTX-7SourceDMG6602SVTQ-7DMG6602SVT-7
ManufacturerDiodes Inc.Diodes Inc.Diodes Inc.
Package TypeSOT23 (6-Pin)SOT23 (6-Pin)SOT23 (6-Pin)
Pin Count666
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C
Price$0.1120$0.1030$0.0612
StockIn StockIn StockIn Stock
LifecycleNOT RECOMMENDEDNOT RECOMMENDED
Electrical Parameters
Factory Lead Time12 Weeks12 Weeks
YTEOL33
Additional FeatureHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODESEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V30 V
Drain Current-Max (ID)2.7 A2.3 A
Drain-source On Resistance-Max0.06 Ω0.06 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)80 pF80 pF
JESD-30 CodeR-PDSO-G6R-PDSO-G6
JESD-609 Codee3e3
Number of Elements22
Operating ModeENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260
Polarity/Channel TypeN-CHANNEL AND P-CHANNELN-CHANNEL AND P-CHANNEL
Reference StandardAEC-Q101MIL-STD-202
Surface MountYESYES
Terminal FinishMATTE TINMATTE TIN
Terminal FormGULL WINGGULL WING
Terminal PositionDUALDUAL
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
Pbfree CodeYes
Power Dissipation-Max (Abs)1.27 W
Pulsed Drain Current-Max (IDM)20 A
Time@Peak Reflow Temperature-Max (s)30

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for DMG6602SVTX-7 — response within 24 hours.

Quick Links

DMG6602SVTQ-7by Diodes Incorporated

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

DMG6602SVT-7by Diodes Incorporated

Power Field-Effect Transistor, 2.3A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for DMG6602SVTX-7 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating DMG6602SVTX-7 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to DMG6602SVTX-7?

Known equivalents for DMG6602SVTX-7 include DMG6602SVTQ-7, DMG6602SVT-7. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of DMG6602SVTX-7?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify DMG6602SVTX-7 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.