CSD88599Q5DC Texas Instruments Integrated Circuit (Other) In Stock

Name: CSD88599Q5DC
Brand: Texas Instruments
SKU: CSD88599Q5DC
Availability: InStock

The CSD88599Q5DC is a dual N-channel power MOSFET from Texas Instruments rated for 60V with an ultra-low 3.3mΩ on-resistance and 448mJ avalanche energy, ideal for high-efficiency synchronous buck converters and power management in telecom and server applications.

ACTIVEIntegrated CircuitVerified Jul 2026

Package / Visual Reference

CSD88599Q5DCOther

Quick Facts

Manufacturer: Texas Instruments
Package: Other
Pin Count: 43
Lifecycle: ACTIVE
Datasheet: CSD88599Q5DC Datasheet PDF
Category: Integrated Circuit
Price: From $2.0625(MOQ 10)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of CSD88599Q5DC?

Dual N-channel MOSFET, series connected center tap, 2 elements
60V drain-source breakdown voltage (min)
Ultra-low 3.3 mΩ max on-resistance (RDS(on))
448 mJ avalanche energy rating (EAS)
16 pF max feedback capacitance (Crss)
Built-in body diode for synchronous rectification

What is CSD88599Q5DC used for?

The CSD88599Q5DC dual MOSFET is optimized for high-efficiency synchronous buck converters used in telecom, server, and industrial power supply designs. Its low 3.3mΩ on-resistance minimizes conduction losses while the 60V breakdown rating and 448mJ avalanche capability provide robust protection in point-of-load power conversion. It is also suitable for battery management and DC-DC converter applications requiring compact, high-current switching.

What are the specifications of CSD88599Q5DC?

Pbfree Code	Yes
YTEOL	15
Avalanche Energy Rating (Eas)	448mJ
Case Connection	DRAIN
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60V
Drain-source On Resistance-Max	0.0033Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	16pF
JESD-30 Code	R-PQFP-N27
JESD-609 Code	e3
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLATPACK
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	12W
Pulsed Drain Current-Max (IDM)	400A
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	NO LEAD
Terminal Position	QUAD
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99
HTS Code	8541.29.00.95

Where can I find the CSD88599Q5DC datasheet?

CSD88599Q5DC Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for CSD88599Q5DC?

Compatible alternatives and drop-in replacements for CSD88599Q5DC:

CSD88599Q5DCTTexas Instruments

Power Field-Effect Transistor, 60V, 0.0033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

View Part →

Compare all alternatives & request quotes →

Frequently Asked Questions

How low is the on-resistance of the CSD88599Q5DC power MOSFET?

The CSD88599Q5DC offers a maximum drain-source on-resistance of just 3.3 mΩ (0.0033 Ω) at a 60V breakdown rating, minimizing conduction losses in high-current synchronous buck converter designs.

Why is the CSD88599Q5DC well suited for high-reliability power conversion designs?

This MOSFET is rated for a 448 mJ avalanche energy (EAS) and a 60V minimum breakdown voltage, giving designers extra ruggedness margin against voltage transients in server and telecom synchronous buck power stages.

How is the CSD88599Q5DC constructed internally to support dual-switch power designs?

The CSD88599Q5DC integrates 2 series-connected N-channel MOSFET elements with a center tap and built-in body diode inside a 27-pin R-PQFP-N27 package, with drain as the case connection for improved thermal dissipation.

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About Texas Instruments

Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.

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AvailabilityIn Stock

Reference Price (USD)

From $2.0625

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Qty.	Unit Price	Ext. Price
10+	$3.8980	$38.98
100+	$2.7925	$279.25
500+	$2.5245	$1262.25
2500+	$2.0625	$5156.25

pcs

Unit price: $3.8980 · Total: $38.98

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Lead Time3-7 business days

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OriginChina (Authorized)

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CSD88599Q5DC Texas Instruments Integrated Circuit (Other) In Stock

What are the key features of CSD88599Q5DC?

What is CSD88599Q5DC used for?

What are the specifications of CSD88599Q5DC?

Compliance & Regulatory

Where can I find the CSD88599Q5DC datasheet?

What are equivalent replacements for CSD88599Q5DC?

Frequently Asked Questions

How low is the on-resistance of the CSD88599Q5DC power MOSFET?

Why is the CSD88599Q5DC well suited for high-reliability power conversion designs?

How is the CSD88599Q5DC constructed internally to support dual-switch power designs?

Related Guides

CSD87313DMS Synchronous Buck Power Stage Design Guide

STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection

C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC

STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security

Why Buy from FindMyChip

About Texas Instruments

More from Texas Instruments

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