CSD88539NDAlternatives & Equivalent Parts
About CSD88539ND
CSD88539ND is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Small Outline Packages package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Specification Comparison
| Parameter | CSD88539NDSource | CSD88539NDT |
|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments |
| Package Type | Small Outline Packages | Small Outline Packages |
| Pin Count | 8 | 8 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C |
| Price | $0.2894 | $0.2894 |
| Electrical Parameters | ||
| Pbfree Code | Yes | Yes |
| YTEOL | 15 | 15 |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 24 mJ | 24 mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V | 60 V |
| Drain Current-Max (ID) | 15 A | 15 A |
| Drain-source On Resistance-Max | 0.034 Ω | 0.034 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 2.6 pF | 2.6 pF |
| JEDEC-95 Code | MS-012AA | MS-012AA |
| JESD-30 Code | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609 Code | e4 | e4 |
| Number of Elements | 2 | 2 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.1 W | 2.1 W |
| Pulsed Drain Current-Max (IDM) | 46 A | 46 A |
| Surface Mount | YES | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING | GULL WING |
| Terminal Position | DUAL | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 |
| Transistor Application | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Quick Links
Power Field-Effect Transistor, 15A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Why Look for Alternatives?
Finding alternatives for CSD88539ND is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD88539ND replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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Request Alternatives for CSD88539NDFAQ
What is equivalent to CSD88539ND?
Known equivalents for CSD88539ND include CSD88539NDT. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD88539ND?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD88539ND alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.