CSD87313DMS Texas Instruments MOSFET (N-Channel) (Other) In Stock

Name: CSD87313DMS
Brand: Texas Instruments
SKU: CSD87313DMS
Availability: InStock

The CSD87313DMS is a dual N-channel power MOSFET synchronous buck stage. It offers a 30 V drain-source breakdown voltage, 17 A maximum drain current, and 67 mJ avalanche energy rating. From $1.10 in stock, worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jul 2026

Package / Visual Reference

CSD87313DMSOther

Quick Facts

Manufacturer: Texas Instruments
Package: Other
Pin Count: 10
Lifecycle: ACTIVE
Datasheet: CSD87313DMS Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.5750(MOQ 100)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of CSD87313DMS?

Dual N-channel MOSFET common-drain configuration with built-in diode
30 V minimum drain-source breakdown voltage
17 A maximum continuous drain current
67 mJ avalanche energy rating for ruggedness
200 pF maximum reverse transfer capacitance (Crss)
Optimized for synchronous buck power conversion

What is CSD87313DMS used for?

The CSD87313DMS dual MOSFET power stage is widely used in synchronous buck converters for point-of-load power supplies, telecom and networking equipment, and industrial DC-DC modules that need high efficiency at moderate current levels. Its 30 V breakdown voltage and 67 mJ avalanche rating also suit motor drive and battery management circuits exposed to switching transients.

What are the specifications of CSD87313DMS?

Pbfree Code	Yes
YTEOL	15
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	67mJ
Case Connection	SOURCE
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30V
Drain Current-Max (ID)	17A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	200pF
JESD-30 Code	S-PDSO-N6
JESD-609 Code	e3
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	SQUARE
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.7W
Pulsed Drain Current-Max (IDM)	120A
Surface Mount	YES
Terminal Finish	Tin (Sn)
Terminal Form	NO LEAD
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99
HTS Code	8541.29.00.95

Where can I find the CSD87313DMS datasheet?

CSD87313DMS Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for CSD87313DMS?

Compatible alternatives and drop-in replacements for CSD87313DMS:

CSD87313DMSTTexas Instruments

Power Field-Effect Transistor, 17A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

View Part →

Compare all alternatives & request quotes →

Frequently Asked Questions

How much continuous drain current can the CSD87313DMS handle in a synchronous buck design?

The CSD87313DMS is rated for a maximum drain current of 17 A with a 30 V drain-source breakdown voltage, giving designers enough headroom for point-of-load buck converters operating from typical 12 V or 24 V bus rails.

What ruggedness margin does the CSD87313DMS provide against switching-induced avalanche events?

This dual MOSFET is avalanche rated at 67 mJ, which lets it absorb transient inductive energy spikes up to that level during hard switching without exceeding its 30 V breakdown rating, improving reliability in synchronous buck applications.

In which power conversion designs does the CSD87313DMS's common-drain, two-element configuration provide the most benefit?

Because it integrates a high-side and low-side N-channel pair with a built-in diode and a low 200 pF reverse transfer capacitance, the CSD87313DMS is well suited to high-frequency synchronous buck converters delivering up to 17 A of load current with minimal switching loss.

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About Texas Instruments

Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.

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AvailabilityIn Stock

Reference Price (USD)

From $0.5750

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
100+	$0.9264	$92.64
500+	$0.7379	$368.94
1000+	$0.7038	$703.80
2500+	$0.6117	$1529.20
5000+	$0.5750	$2875.00

pcs

Unit price: $0.9264 · Total: $92.64

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Lead Time3-7 business days

MOQFrom 1 piece

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OriginChina (Authorized)

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CSD87313DMS Texas Instruments MOSFET (N-Channel) (Other) In Stock

What are the key features of CSD87313DMS?

What is CSD87313DMS used for?

What are the specifications of CSD87313DMS?

Compliance & Regulatory

Where can I find the CSD87313DMS datasheet?

What are equivalent replacements for CSD87313DMS?

Frequently Asked Questions

How much continuous drain current can the CSD87313DMS handle in a synchronous buck design?

What ruggedness margin does the CSD87313DMS provide against switching-induced avalanche events?

In which power conversion designs does the CSD87313DMS's common-drain, two-element configuration provide the most benefit?

Related Guides

CSD87313DMS Synchronous Buck Power Stage Design Guide

STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection

C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC

STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security

Why Buy from FindMyChip

About Texas Instruments

More from Texas Instruments

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