CSD75211W1723 Texas Instruments Integrated Circuit (Other) In Stock
The CSD75211W1723 is a dual P-channel power MOSFET from Texas Instruments with a 20V breakdown voltage and 4.5A drain current rating. It features an ultra-low 70 mΩ on-resistance and a built-in diode in a compact 12-ball BGA package. Available in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 12
- Lifecycle
- OBSOLETE
- Datasheet
- CSD75211W1723 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual P-channel MOSFET with 20V VDS breakdown and 4.5A continuous drain current for load switching applications
- Ultra-low 70 mΩ drain-source on-resistance (RDS(on)) for minimal conduction losses in power management
- Built-in body diode for reverse current protection and simplified circuit design
- Compact 12-ball BGA package (R-PBGA-B12) enabling high power density in space-constrained portable designs
Applications
The CSD75211W1723 is designed for load switching, battery protection, and power multiplexing in portable electronics such as smartphones, tablets, and wearables. Its low RDS(on) reduces heat dissipation in high-efficiency DC-DC converter and power rail switching circuits. The compact BGA package makes it well-suited for single-cell Li-ion battery management systems requiring minimal board area.
Specifications
| Pbfree Code | No |
| YTEOL | 0 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 4.5A |
| Drain-source On Resistance-Max | 0.07Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PBGA-B12 |
| JESD-609 Code | e1 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.5W |
| Pulsed Drain Current-Max (IDM) | 4.5A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the CSD75211W1723?
The CSD75211W1723 features a 20V minimum drain-source breakdown voltage, 4.5A maximum continuous drain current, and a maximum RDS(on) of 70 mΩ, making it suitable for low-voltage, high-efficiency load switching and power multiplexing applications.
What package does the CSD75211W1723 use?
The CSD75211W1723 is housed in a 12-ball PBGA package (R-PBGA-B12), offering a compact, low-profile footprint ideal for high-density PCB designs in portable consumer electronics and wearable devices.
Does the CSD75211W1723 have a built-in diode?
Yes, the CSD75211W1723 includes a built-in diode in its single-element configuration, simplifying reverse current protection design and eliminating the need for external Schottky diodes in many battery management and load switch circuits.
Is the CSD75211W1723 RoHS compliant?
The CSD75211W1723 has a JESD-609 code of e1, indicating it is not fully lead-free under standard RoHS requirements. Designers should verify compliance with their specific regulatory requirements before use in restricted markets.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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