CSD75205W1015 Texas Instruments Integrated Circuit (BGA) In Stock
CSD75205W1015 is a dual P-channel MOSFET from Texas Instruments rated at 20V and 1.2A with 0.18Ω on-resistance in a compact 6-ball DSBGA package. Ideal for small-footprint load switching and battery protection circuits requiring integrated diodes and resistors in space-constrained designs.
- Manufacturer
- Texas Instruments
- Package
- BGA
- Pin Count
- 6
- Lifecycle
- OBSOLETE
- Datasheet
- CSD75205W1015 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of CSD75205W1015?
- Dual P-channel MOSFET in a single 6-ball DSBGA package with common-source configuration including built-in diodes and resistors
- Low maximum drain-source on-resistance of 0.18Ω at 1.2A minimizes conduction losses in battery-powered load switches
- Compact DSBGA footprint enables ultra-small PCB layouts suitable for wearable and mobile device power management
What is CSD75205W1015 used for?
CSD75205W1015 is designed for load switching and reverse-battery protection in smartphones, wearables, and portable consumer electronics. Its dual P-channel topology with built-in diodes and resistors reduces external component count in power path management circuits. The 20V rating and small DSBGA package also suit notebook battery cell protection and low-voltage DC-DC power rail switching applications.
What are the specifications of CSD75205W1015?
| Pbfree Code | No |
| YTEOL | 0 |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 1.2A |
| Drain-source On Resistance-Max | 0.18Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 33pF |
| JESD-30 Code | R-XBGA-B6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.75W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | BGA |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the CSD75205W1015 datasheet?
CSD75205W1015 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for CSD75205W1015?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of CSD75205W1015 and how does it affect power efficiency?
CSD75205W1015 has a maximum drain-source on-resistance (RDS(on)) of 0.18Ω at 1.2A drain current. This low resistance minimizes I²R conduction losses in the switch, reducing heat dissipation and improving battery life in portable devices operating from lithium-ion cells near 3.7V to 4.2V.
How many MOSFET channels does CSD75205W1015 integrate and what internal components are included?
CSD75205W1015 integrates 2 P-channel MOSFET elements in a common-source configuration, each with a built-in diode and resistor. This eliminates the need for external flyback diodes and gate resistors, reducing BOM cost and saving PCB space in applications with 20V maximum voltage and 1.2A per channel.
Is CSD75205W1015 suitable for wearable device battery protection circuits?
Yes. The DSBGA-6 package measures approximately 1.0mm x 1.5mm, making it one of the smallest dual P-channel MOSFET options available. At 20V drain-source breakdown voltage and 1.2A current rating, it fits single-cell lithium-ion battery protection designs in fitness trackers, smartwatches, and hearing aids where board space is under 10mm².
What package does CSD75205W1015 use and how does it compare to SOT-363 alternatives?
CSD75205W1015 uses a 6-ball DSBGA package that is significantly smaller than SOT-363 at roughly 1.0mm x 1.5mm versus SOT-363's 2.0mm x 2.1mm footprint. This 40% reduction in board area is critical in ultra-compact portable designs requiring dual MOSFET switching in under 2mm² of layout space.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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