CSD75205W1015 Texas Instruments Integrated Circuit (BGA) In Stock

CSD75205W1015 is a dual P-channel MOSFET from Texas Instruments rated at 20V and 1.2A with 0.18Ω on-resistance in a compact 6-ball DSBGA package. Ideal for small-footprint load switching and battery protection circuits requiring integrated diodes and resistors in space-constrained designs.

OBSOLETEIntegrated CircuitVerified May 2026
Package / Visual Reference
CSD75205W1015BGA
Quick Facts
Manufacturer
Texas Instruments
Package
BGA
Pin Count
6
Lifecycle
OBSOLETE
Category
Integrated Circuit
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

What are the key features of CSD75205W1015?

  • Dual P-channel MOSFET in a single 6-ball DSBGA package with common-source configuration including built-in diodes and resistors
  • Low maximum drain-source on-resistance of 0.18Ω at 1.2A minimizes conduction losses in battery-powered load switches
  • Compact DSBGA footprint enables ultra-small PCB layouts suitable for wearable and mobile device power management

What is CSD75205W1015 used for?

CSD75205W1015 is designed for load switching and reverse-battery protection in smartphones, wearables, and portable consumer electronics. Its dual P-channel topology with built-in diodes and resistors reduces external component count in power path management circuits. The 20V rating and small DSBGA package also suit notebook battery cell protection and low-voltage DC-DC power rail switching applications.

What are the specifications of CSD75205W1015?

Pbfree CodeNo
YTEOL0
ConfigurationCOMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min20V
Drain Current-Max (ID)1.2A
Drain-source On Resistance-Max0.18Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)33pF
JESD-30 CodeR-XBGA-B6
Number of Elements2
Operating ModeENHANCEMENT MODE
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Power Dissipation-Max (Abs)0.75W
Qualification StatusNot Qualified
Surface MountYES
Terminal FormBALL
Terminal PositionBOTTOM
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageBGA

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Where can I find the CSD75205W1015 datasheet?

CSD75205W1015 Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for CSD75205W1015?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the drain-source on-resistance of CSD75205W1015 and how does it affect power efficiency?

CSD75205W1015 has a maximum drain-source on-resistance (RDS(on)) of 0.18Ω at 1.2A drain current. This low resistance minimizes I²R conduction losses in the switch, reducing heat dissipation and improving battery life in portable devices operating from lithium-ion cells near 3.7V to 4.2V.

How many MOSFET channels does CSD75205W1015 integrate and what internal components are included?

CSD75205W1015 integrates 2 P-channel MOSFET elements in a common-source configuration, each with a built-in diode and resistor. This eliminates the need for external flyback diodes and gate resistors, reducing BOM cost and saving PCB space in applications with 20V maximum voltage and 1.2A per channel.

Is CSD75205W1015 suitable for wearable device battery protection circuits?

Yes. The DSBGA-6 package measures approximately 1.0mm x 1.5mm, making it one of the smallest dual P-channel MOSFET options available. At 20V drain-source breakdown voltage and 1.2A current rating, it fits single-cell lithium-ion battery protection designs in fitness trackers, smartwatches, and hearing aids where board space is under 10mm².

What package does CSD75205W1015 use and how does it compare to SOT-363 alternatives?

CSD75205W1015 uses a 6-ball DSBGA package that is significantly smaller than SOT-363 at roughly 1.0mm x 1.5mm versus SOT-363's 2.0mm x 2.1mm footprint. This 40% reduction in board area is critical in ultra-compact portable designs requiring dual MOSFET switching in under 2mm² of layout space.

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About Texas Instruments

Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.

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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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