CSD25310Q2T Texas Instruments MOSFET (P-Channel) (Other) In Stock
CSD25310Q2T is a Texas Instruments 20 V P-Channel NexFET power MOSFET rated for a maximum drain current of 9.6 A and a low on-resistance of 0.089 Ω, built with an integrated body diode for compact DC-DC power switching and load-protection applications.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- CSD25310Q2T Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.5003(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of CSD25310Q2T?
- 20 V P-Channel NexFET power MOSFET technology
- Maximum drain current (ID) of 9.6 A
- Low drain-source on-resistance (RDS(on)) of 0.089 Ω max
- Built-in body diode, single FET configuration
- Feedback capacitance (Crss) of 21.7 pF max
- SON6 (S-PDSO-N6) leadless package with source case connection
- RoHS-compliant, Pb-free construction
What is CSD25310Q2T used for?
The CSD25310Q2T is a 20 V P-Channel NexFET MOSFET well suited to battery load switching, DC-DC power conversion, and power-path protection circuits that need a low 0.089 Ω on-resistance to minimize conduction loss. Its 9.6 A maximum drain current and built-in body diode make it a compact choice for space-constrained portable and industrial power designs. The leadless SON6 package with source-connected case supports high-density board layouts.
What are the specifications of CSD25310Q2T?
| Pbfree Code | Yes |
| YTEOL | 15 |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | -9.6 A |
| Drain-source On Resistance-Max | 0.089Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 21.7pF |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.9W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the CSD25310Q2T datasheet?
CSD25310Q2T Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for CSD25310Q2T?
Compatible alternatives and drop-in replacements for CSD25310Q2T:
Power Field-Effect Transistor, -9.6A I(D), 20V, 0.089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Frequently Asked Questions
How much on-resistance does the CSD25310Q2T add to a power path?
The CSD25310Q2T specifies a maximum drain-source on-resistance of 0.089 Ω at its rated 20 V breakdown voltage, helping designers minimize conduction losses in battery load switches and DC-DC power paths.
What current handling can the CSD25310Q2T support?
This P-Channel NexFET MOSFET is rated for a maximum drain current of 9.6 A alongside a 20 V minimum drain-source breakdown voltage, giving designers enough headroom for load-switch and power-protection circuits in portable electronics.
How is the CSD25310Q2T packaged for board mounting?
The CSD25310Q2T ships in a leadless SON6 package coded JESD-30 S-PDSO-N6 with a source case connection, and its low 21.7 pF maximum feedback capacitance supports fast switching in compact, space-constrained layouts.
Where is the CSD25310Q2T typically deployed in end products?
As a single 20 V P-Channel NexFET MOSFET with a built-in body diode and 0.089 Ω maximum on-resistance, the CSD25310Q2T is commonly used in battery load switching, power-path protection, and DC-DC conversion circuits.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
More from Texas Instruments
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6830 | $0.68 |
| 10+ | $0.6440 | $6.44 |
| 1250+ | $0.5421 | $677.67 |
| 1750+ | $0.5209 | $911.58 |
| 2500+ | $0.5003 | $1250.65 |
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