CSD25302Q2 Texas Instruments MOSFET (P-Channel) (Other) In Stock
The CSD25302Q2 is a P-Channel power MOSFET from Texas Instruments rated at -20 V drain-source voltage and -5 A continuous drain current. Key specs include 92 mΩ max Rds(on) and avalanche-rated robustness in a compact 6-pin SON package. Available from stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 6
- Lifecycle
- OBSOLETE
- Datasheet
- CSD25302Q2 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of CSD25302Q2?
- Avalanche-rated P-channel MOSFET with -20 V Vds and -5 A Id for reliable high-side switch protection
- 92 mΩ maximum Rds(on) minimizes conduction losses in load-switch and power-management circuits
- Compact 6-pin SON package enables high-density PCB layouts in space-constrained mobile and IoT power stages
What is CSD25302Q2 used for?
The CSD25302Q2 is designed for high-side load switching, reverse-polarity protection, and power sequencing in portable electronics and IoT devices running from single-cell or dual-cell battery supplies up to 20 V. Its avalanche rating adds reliability margin in inductive load applications such as motor drive and solenoid control. The small SON-6 footprint makes it a strong fit for USB-C power delivery accessory circuits and wearable device power management.
What are the specifications of CSD25302Q2?
| Pbfree Code | No |
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 0.092Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.4W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the CSD25302Q2 datasheet?
CSD25302Q2 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for CSD25302Q2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the 92 mΩ Rds(on) of CSD25302Q2 affect power dissipation in a 5 A load-switch application?
At the maximum rated drain current of 5 A, the CSD25302Q2 dissipates approximately P = I² × Rds(on) = 25 × 0.092 = 2.3 W of conduction loss. The SON-6 thermal resistance to ambient is typically around 50 °C/W, so junction temperature rise would be roughly 115 °C above ambient, requiring adequate airflow or a copper pour to keep the device within its operating limits.
For which battery-powered high-side switch topologies does the -20 V Vds rating of CSD25302Q2 provide sufficient margin?
The -20 V drain-source breakdown voltage accommodates high-side switches powered from 1-cell Li-ion (4.2 V), dual-cell Li-ion (8.4 V), and 12 V lead-acid batteries with a comfortable safety margin of at least 8 V. This makes the CSD25302Q2 suitable for USB power switches, reverse-battery protection, and low-voltage motor H-bridge applications where peak transient voltages remain below -20 V.
What is the significance of the avalanche rating on CSD25302Q2 for inductive load driving?
Avalanche rating means the CSD25302Q2 can absorb energy stored in an inductive load—such as a relay coil or small motor—when the MOSFET turns off and the voltage spike exceeds -20 V. This eliminates the need for an external snubber diode in many designs, reducing BOM by 1 component and allowing inductive currents up to the device-specified avalanche energy limit without catastrophic failure.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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