CSD19538Q3ATAlternatives & Equivalent Parts
About CSD19538Q3AT
CSD19538Q3AT is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Specification Comparison
| Parameter | CSD19538Q3ATSource | CSD19538Q3A | LM5022MMX/NOPB | CSD19531Q5AT | CSD19533Q5AT | CSD19538Q2T | CSD19537Q3T | CSD19538Q2 | CSD19531Q5A | CSD19534Q5A |
|---|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package Type | Other | Other | Small Outline Packages | Other | Other | Other | Other | Other | Other | Other |
| Pin Count | 11 | 9 | 10 | 9 | 9 | 8 | 9 | 8 | 9 | 9 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C |
| Price | $0.4856 | $0.1794 | $0.7884 | $0.8070 | $0.6132 | $0.3944 | $0.5540 | $0.1790 | $0.7400 | $0.3481 |
| Electrical Parameters | ||||||||||
| Pbfree Code | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Date Of Intro | 2016-06-02 | 2016-06-02 | — | — | — | 2016-07-09 | — | 2016-07-09 | — | — |
| YTEOL | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED | — | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 8.1 mJ | 8.1 mJ | — | 180 mJ | 106 mJ | 8 mJ | 55 mJ | 8 mJ | 180 mJ | 55 mJ |
| Case Connection | DRAIN | DRAIN | — | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE | SINGLE | — | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | 100 V | — | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Drain Current-Max (ID) | 15 A | 15 A | — | 110 A | 100 A | 14.4 A | 53 A | 14.4 A | 110 A | 44 A |
| Drain-source On Resistance-Max | 0.072 Ω | 0.072 Ω | — | 0.0078 Ω | 0.0111 Ω | 0.072 Ω | 0.0166 Ω | 0.072 Ω | 0.0078 Ω | 0.0176 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 16.4 pF | 16.4 pF | — | 16.9 pF | 12.5 pF | 16.4 pF | 17.3 pF | 16.4 pF | 16.9 pF | 7.4 pF |
| JESD-30 Code | R-PDSO-F5 | R-PDSO-F5 | S-PDSO-G10 | R-PDSO-N8 | R-PDSO-N8 | S-PDSO-N6 | S-PDSO-N8 | S-PDSO-N6 | R-PDSO-N8 | R-PDSO-N8 |
| JESD-609 Code | e3 | e3 | e3 | e3 | e3 | e4 | e3 | e4 | e3 | e3 |
| Number of Elements | 1 | 1 | — | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | SQUARE | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | — | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 23 W | 23 W | — | — | 96 W | 20.2 W | — | 20.2 W | 125 W | — |
| Pulsed Drain Current-Max (IDM) | 36 A | 36 A | — | 337 A | 231 A | 34.4 A | 219 A | 34.4 A | 337 A | 137 A |
| Surface Mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal Form | FLAT | FLAT | GULL WING | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal Position | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Transistor Application | SWITCHING | SWITCHING | — | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON | — | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| ## CSD19538Q3AT Alternates Showing results | Image | — | — | — | — | — | — | — | — | — |
| ## CSD19538Q3A Alternates Showing results | — | Image | — | — | — | — | — | — | — | — |
| Analog IC - Other Type | — | — | SWITCHING CONTROLLER | — | — | — | — | — | — | — |
| Control Mode | — | — | CURRENT-MODE | — | — | — | — | — | — | — |
| Control Technique | — | — | PULSE WIDTH MODULATION | — | — | — | — | — | — | — |
| Input Voltage-Max | — | — | 60 V | — | — | — | — | — | — | — |
| Input Voltage-Min | — | — | 6 V | — | — | — | — | — | — | — |
| Input Voltage-Nom | — | — | 24 V | — | — | — | — | — | — | — |
| Number of Functions | — | — | 1 | — | — | — | — | — | — | — |
| Number of Outputs | — | — | 1 | — | — | — | — | — | — | — |
| Output Current-Max | — | — | 10 A | — | — | — | — | — | — | — |
| Output Voltage-Max | — | — | 300 V | — | — | — | — | — | — | — |
| Output Voltage-Min | — | — | 1.25 V | — | — | — | — | — | — | — |
| Package Equivalence Code | — | — | TSSOP10,.19,20 | — | — | — | — | — | — | — |
| Qualification Status | — | — | Not Qualified | — | — | — | — | — | — | — |
| Supply Current-Max (Isup) | — | — | 4 mA | — | — | — | — | — | — | — |
| Switcher Configuration | — | — | BUCK-BOOST | — | — | — | — | — | — | — |
| Switching Frequency-Max | — | — | 2200 kHz | — | — | — | — | — | — | — |
| Temperature Grade | — | — | AUTOMOTIVE | — | — | — | — | — | — | — |
| Terminal Pitch | — | — | 0.5 mm | — | — | — | — | — | — | — |
| ## LM5022MMX/NOPB Alternates Showing results | — | — | Image | — | — | — | — | — | — | — |
| ## CSD19534Q5A Alternates Showing results | — | — | — | — | — | — | — | — | — | Image |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Quick Links
Power Field-Effect Transistor, 15A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
suggested
Power Field-Effect Transistor, 110A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 53A I(D), 100V, 0.0166ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 110A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 44A I(D), 100V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for CSD19538Q3AT is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD19538Q3AT replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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What is equivalent to CSD19538Q3AT?
Known equivalents for CSD19538Q3AT include CSD19538Q3A, LM5022MMX/NOPB, CSD19531Q5AT. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD19538Q3AT?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD19538Q3AT alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.