CSD19538Q2Alternatives & Equivalent Parts

About CSD19538Q2

CSD19538Q2 is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

Specification Comparison

ParameterCSD19538Q2SourceCSD18541F5TCSD18543Q3ACSD19538Q2T
ManufacturerTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas Instruments
Package TypeOtherOtherOtherOther
Pin Count8398
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C
Price$0.1790$0.4615$0.3821$0.3944
Electrical Parameters
Pbfree CodeYesYesYesYes
Date Of Intro2016-07-092016-05-292016-12-092016-07-09
YTEOL15151515
Additional FeatureAVALANCHE RATEDAVALANCHE RATEDAVALANCHE RATED
Avalanche Energy Rating (Eas)8 mJ55 mJ8 mJ
Case ConnectionDRAINDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE AND RESISTORSINGLESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V60 V60 V100 V
Drain Current-Max (ID)14.4 A-2.2 A60 A14.4 A
Drain-source On Resistance-Max0.072 Ω0.075 Ω0.0156 Ω0.072 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)16.4 pF10.5 pF6.2 pF16.4 pF
JESD-30 CodeS-PDSO-N6R-XBCC-N3R-PDSO-F5S-PDSO-N6
JESD-609 Codee4e4e3e4
Number of Elements1111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYUNSPECIFIEDPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeSQUARERECTANGULARRECTANGULARSQUARE
Package StyleSMALL OUTLINECHIP CARRIERSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260260260
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)20.2 W0.5 W20.2 W
Pulsed Drain Current-Max (IDM)34.4 A21 A156 A34.4 A
Surface MountYESYESYESYES
Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)Nickel/Gold (Ni/Au)Matte Tin (Sn)Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal FormNO LEADNO LEADFLATNO LEAD
Terminal PositionDUALBOTTOMDUALDUAL
Time@Peak Reflow Temperature-Max (s)30303030
Transistor ApplicationSWITCHINGSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICONSILICON
Power Dissipation Ambient-Max0.5 W

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Quick Links

CSD19538Q2Tby Texas Instruments

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for CSD19538Q2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating CSD19538Q2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to CSD19538Q2?

Known equivalents for CSD19538Q2 include CSD18541F5T, CSD18543Q3A, CSD19538Q2T. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of CSD19538Q2?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify CSD19538Q2 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.