CSD19537Q3TAlternatives & Equivalent Parts
About CSD19537Q3T
CSD19537Q3T is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Specification Comparison
| Parameter | CSD19537Q3TSource | CSD19537Q3 | CSD19538Q2T | CSD19538Q3AT | CSD19538Q3A | CSD19532KTT | CSD19538Q2 | CSD19531Q5A | CSD19531Q5AT | CSD19536KTT |
|---|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package Type | Other | Other | Other | Other | Other | Other | Other | Other | Other | — |
| Pin Count | 9 | 8 | 8 | 11 | 9 | 3 | 8 | 9 | 9 | — |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 175.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | — |
| Price | $0.5540 | $0.4856 | $0.3944 | $0.4856 | $0.1794 | $1.0381 | $0.1790 | $0.7400 | $0.8070 | $2.1030 |
| Electrical Parameters | ||||||||||
| Pbfree Code | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | — |
| YTEOL | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | — |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | — |
| Avalanche Energy Rating (Eas) | 55 mJ | 55 mJ | 8 mJ | 8.1 mJ | 8.1 mJ | 259 mJ | 8 mJ | 180 mJ | 180 mJ | — |
| Case Connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | — |
| Configuration | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | — |
| DS Breakdown Voltage-Min | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | — |
| Drain Current-Max (ID) | 53 A | 53 A | 14.4 A | 15 A | 15 A | 200 A | 14.4 A | 110 A | 110 A | — |
| Drain-source On Resistance-Max | 0.0166 Ω | 0.0166 Ω | 0.072 Ω | 0.072 Ω | 0.072 Ω | 0.0066 Ω | 0.072 Ω | 0.0078 Ω | 0.0078 Ω | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — |
| Feedback Cap-Max (Crss) | 17.3 pF | 17.3 pF | 16.4 pF | 16.4 pF | 16.4 pF | 18 pF | 16.4 pF | 16.9 pF | 16.9 pF | — |
| JESD-30 Code | S-PDSO-N8 | S-PDSO-N8 | S-PDSO-N6 | R-PDSO-F5 | R-PDSO-F5 | R-PSSO-G2 | S-PDSO-N6 | R-PDSO-N8 | R-PDSO-N8 | — |
| JESD-609 Code | e3 | e3 | e4 | e3 | e3 | e3 | e4 | e3 | e3 | — |
| Number of Elements | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | — |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — |
| Package Shape | SQUARE | SQUARE | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | — |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | — |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | — |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | — |
| Pulsed Drain Current-Max (IDM) | 219 A | 219 A | 34.4 A | 36 A | 36 A | 400 A | 34.4 A | 337 A | 337 A | — |
| Surface Mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | — |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) | — |
| Terminal Form | NO LEAD | NO LEAD | NO LEAD | FLAT | FLAT | GULL WING | NO LEAD | NO LEAD | NO LEAD | — |
| Terminal Position | DUAL | DUAL | DUAL | DUAL | DUAL | SINGLE | DUAL | DUAL | DUAL | — |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | — |
| Transistor Application | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | — |
| Transistor Element Material | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | — |
| ## CSD19537Q3 Alternates Showing results | — | Image | — | — | — | — | — | — | — | — |
| Date Of Intro | — | — | 2016-07-09 | 2016-06-02 | 2016-06-02 | — | 2016-07-09 | — | — | — |
| Power Dissipation-Max (Abs) | — | — | 20.2 W | 23 W | 23 W | — | 20.2 W | 125 W | — | — |
| ## CSD19538Q3AT Alternates Showing results | — | — | — | Image | — | — | — | — | — | — |
| ## CSD19538Q3A Alternates Showing results | — | — | — | — | Image | — | — | — | — | — |
| JEDEC-95 Code | — | — | — | — | — | TO-263AB | — | — | — | — |
| ## CSD19532KTT Alternates Showing results | — | — | — | — | — | Image | — | — | — | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Quick Links
Power Field-Effect Transistor, 53A I(D), 100V, 0.0166ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 15A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 15A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 200A I(D), 100V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 110A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 110A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Why Look for Alternatives?
Finding alternatives for CSD19537Q3T is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD19537Q3T replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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What is equivalent to CSD19537Q3T?
Known equivalents for CSD19537Q3T include CSD19537Q3, CSD19538Q2T, CSD19538Q3AT. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD19537Q3T?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD19537Q3T alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.