CSD19537Q3Alternatives & Equivalent Parts

About CSD19537Q3

CSD19537Q3 is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterCSD19537Q3SourceCSD19537Q3TDRV8353SRTARF280023CPTSRFDLL4148X1N4148UR-1/TRBD135
ManufacturerTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsON SemiconductorMicrochipSTMicroelectronics
Package TypeOtherOtherQuad Flat No-LeadQuad Flat PackagesOtherOtherTransistor Outline, Vertical
Pin Count894148223
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-40.0°C ~ 125.0°C-40.0°C ~ 125.0°C-65.0°C ~ 175.0°C~ 150.0°C
Price$0.4856$0.5540$1.8340$3.1100$0.7700$0.0710
StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesYesYesYesNo
YTEOL15151515230
Additional FeatureAVALANCHE RATEDAVALANCHE RATEDMETALLURGICALLY BONDEDLOW LEAKAGE
Avalanche Energy Rating (Eas)55 mJ55 mJ
Case ConnectionDRAINDRAIN
ConfigurationSINGLESINGLESINGLESINGLE
DS Breakdown Voltage-Min100 V100 V
Drain Current-Max (ID)53 A53 A
Drain-source On Resistance-Max0.0166 Ω0.0166 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)17.3 pF17.3 pF
JESD-30 CodeS-PDSO-N8S-PDSO-N8S-PQCC-N40S-PQFP-G48O-LELF-R2R-PSFM-T3
JESD-609 Codee3e3e4e4e0
Number of Elements1111
Operating ModeENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYGLASSPLASTIC/EPOXY
Package ShapeSQUARESQUARESQUARESQUAREROUNDRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINECHIP CARRIER, HEAT SINK/SLUG, VERY VERY THIN PROFILEFLATPACK, LOW PROFILE, FINE PITCHLONG FORMFLANGE MOUNT
Peak Reflow Temperature (Cel)260260260260
Polarity/Channel TypeN-CHANNELN-CHANNELNPN
Pulsed Drain Current-Max (IDM)219 A219 A
Surface MountYESYESYESYESYESNO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)Nickel/Palladium/Gold (Ni/Pd/Au)Nickel/Palladium/Gold (Ni/Pd/Au)Tin/Lead (Sn/Pb)
Terminal FormNO LEADNO LEADNO LEADGULL WINGWRAP AROUNDTHROUGH-HOLE
Terminal PositionDUALDUALQUADQUADENDSINGLE
Time@Peak Reflow Temperature-Max (s)30303030
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICON
## CSD19537Q3 Alternates Showing resultsImage
High Side DriverYES
Interface IC TypeHALF BRIDGE BASED MOSFET DRIVER
Number of Functions1
Output CharacteristicsPUSH-PULL
Output Peak Current Limit-Nom1 A
Package Equivalence CodeLCC40,.24SQ,20QFP48,.35SQ,20
Supply Current-Max13 mA5 mA
Supply Voltage-Max75 V3.63 V
Supply Voltage-Min9 V2.8 V
Supply Voltage-Nom48 V3.3 V
Supply Voltage1-Max102 V
Supply Voltage1-Min9 V
Supply Voltage1-Nom48 V
Terminal Pitch0.5 mm0.5 mm
Turn-off Time1000 µs
Turn-on Time1000 µs
## DRV8353SRTAR Alternates Showing resultsImage
Date Of Intro2020-03-21
Has ADCYES
Bit Size32
Boundary ScanYES
CPU FamilyC28X
Clock Frequency-Max25 MHz
DAC ChannelsYES
DMA ChannelsYES
FormatFLOATING POINT
Integrated CacheNO
Low Power ModeYES
Number of DMA Channels6
Number of External Interrupts5
Number of I/O Lines24
Number of Serial I/Os1
Number of Timers3
On Chip Data RAM Width8
On Chip Program ROM Width8
PWM ChannelsYES
RAM (bytes)24576
ROM (words)65536
ROM ProgrammabilityFLASH
Speed100 MHz
TechnologyCMOS
Temperature GradeAUTOMOTIVE
uPs/uCs/Peripheral ICs TypeMICROCONTROLLER, RISC
Factory Lead Time20 Weeks
ApplicationSWITCHING
Breakdown Voltage-Min100 V
Diode Element MaterialSILICON
Diode TypeRECTIFIER DIODE
Forward Voltage-Max (VF)1.2 V
JEDEC-95 CodeDO-213AATO-126
Non-rep Pk Forward Current-Max2 A
Number of Phases1
Output Current-Max0.2 A
Qualification StatusNot QualifiedNot Qualified
Reference StandardMIL-19500
Rep Pk Reverse Voltage-Max75 V
Reverse Current-Max0.5 µA
Reverse Recovery Time-Max0.005 µs
Reverse Test Voltage75 V
Manufacturer Package Code77-09
Collector Current-Max (IC)1.5 A
Collector-Emitter Voltage-Max45 V
DC Current Gain-Min (hFE)40
Power Dissipation Ambient-Max12.5 W
VCEsat-Max0.5 V

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 6 alternatives for CSD19537Q3 — response within 24 hours.

Quick Links

CSD19537Q3Tby Texas Instruments

Power Field-Effect Transistor, 53A I(D), 100V, 0.0166ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FDLL4148X

suggested

BD135

suggested

Why Look for Alternatives?

Finding alternatives for CSD19537Q3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating CSD19537Q3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to CSD19537Q3?

Known equivalents for CSD19537Q3 include CSD19537Q3T, DRV8353SRTAR, F280023CPTSR. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of CSD19537Q3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify CSD19537Q3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.