CSD19506KCS Texas Instruments MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
CSD19506KCS is an 80V N-Channel MOSFET from Texas Instruments featuring ultra-low 2.8mΩ on-resistance and 273A drain current. It offers avalanche-rated protection and single configuration with built-in diode. From $0.45 in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- CSD19506KCS Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4488(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of CSD19506KCS?
- 80V breakdown voltage with avalanche-rated protection (Eas: 832mJ) for robust circuit reliability
- Ultra-low drain-source on-resistance of 2.8mΩ (max) enabling high-efficiency power conversion
- High 273A maximum drain current supporting demanding high-current switching applications
- Single N-Channel configuration with built-in diode simplifying circuit design
- RoHS-compliant (Pb-free) Transistor Outline Vertical package for easy PCB integration
What is CSD19506KCS used for?
The CSD19506KCS is ideal for high-current DC-DC converters, synchronous rectification, and motor drive applications where low conduction losses are critical. Its avalanche-rated design makes it well-suited for automotive power systems, industrial motor controllers, and server power supplies. The ultra-low RDS(on) of 2.8mΩ ensures minimal power dissipation in demanding switching environments.
What are the specifications of CSD19506KCS?
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 832mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80V |
| Drain Current-Max (ID) | 273A |
| Drain-source On Resistance-Max | 0.0028Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 55pF |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 375W |
| Pulsed Drain Current-Max (IDM) | 400A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the CSD19506KCS datasheet?
CSD19506KCS Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for CSD19506KCS?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and breakdown voltage of the CSD19506KCS?
The CSD19506KCS supports a maximum drain current (ID) of 273A and features an 80V minimum drain-source breakdown voltage, making it suitable for high-current, medium-voltage power conversion applications.
What does avalanche-rated mean for the CSD19506KCS?
Avalanche-rated means the CSD19506KCS can safely absorb energy during avalanche breakdown events without permanent damage. With an avalanche energy rating (Eas) of 832mJ, it provides robust protection in inductive switching circuits where voltage spikes may exceed the rated breakdown voltage.
What are typical applications for the CSD19506KCS MOSFET?
The CSD19506KCS is commonly used in synchronous DC-DC converters, motor drive circuits, industrial power supplies, and automotive power management systems. Its ultra-low 2.8mΩ on-resistance and 273A current rating make it excellent for high-efficiency, high-current switching applications.
What package does the CSD19506KCS come in and is it RoHS compliant?
The CSD19506KCS comes in a Transistor Outline Vertical package with drain case connection. It is fully RoHS compliant (Pb-free code: Yes) and rated for a 15-year end-of-life (YTEOL), ensuring long-term availability and environmental compliance.
Related Guides
XITCORP SSD Controllers: RISC-V Architecture and SM2/SM3/SM4 National Cryptography
How XITCORP pairs RISC-V multi-core controllers with hardware SM2/SM3/SM4 national cryptography, AES-256, and TCG Opal 2.0 across its SATA III and PCIe NVMe SSD controller lines.
Jul 12, 2026
SM2, SM3, SM4 National Cryptography in SSDs: A Design Guide for Secure Storage
How hardware SM2/SM3/SM4 engines deliver Guomi-certified full-disk encryption in SSDs, and when to choose national cryptography over AES-256 and TCG Opal 2.0.
Jul 12, 2026
Enterprise vs Industrial SSDs: How to Choose by PLP, DWPD, and Wide-Temperature Endurance
How to pick between enterprise and industrial SSDs using power-loss protection, DWPD/TBW endurance, and -40 to +85C wide-temperature qualification as the deciding factors.
Jul 12, 2026
150141RS73100 Red LED Indicator and Current-Resistor Design Guide
Design a reliable 150141RS73100 red LED indicator with worst-case resistor sizing, GPIO checks, PWM drive, layout, and production validation.
Jul 11, 2026
Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
More from Texas Instruments
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4498 | $0.45 |
| 10+ | $0.4488 | $4.49 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“We've been using FindMyChip for 2 years. Pricing is consistently 20-30% below Mouser/DigiKey for volume orders.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)