CSD19506KCS Texas Instruments MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
CSD19506KCS is an 80V N-Channel MOSFET from Texas Instruments featuring ultra-low 2.8mΩ on-resistance and 273A drain current. It offers avalanche-rated protection and single configuration with built-in diode. From $0.45 in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- CSD19506KCS Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4488(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 80V breakdown voltage with avalanche-rated protection (Eas: 832mJ) for robust circuit reliability
- Ultra-low drain-source on-resistance of 2.8mΩ (max) enabling high-efficiency power conversion
- High 273A maximum drain current supporting demanding high-current switching applications
- Single N-Channel configuration with built-in diode simplifying circuit design
- RoHS-compliant (Pb-free) Transistor Outline Vertical package for easy PCB integration
Applications
The CSD19506KCS is ideal for high-current DC-DC converters, synchronous rectification, and motor drive applications where low conduction losses are critical. Its avalanche-rated design makes it well-suited for automotive power systems, industrial motor controllers, and server power supplies. The ultra-low RDS(on) of 2.8mΩ ensures minimal power dissipation in demanding switching environments.
Specifications
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 832mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80V |
| Drain Current-Max (ID) | 273A |
| Drain-source On Resistance-Max | 0.0028Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 55pF |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 375W |
| Pulsed Drain Current-Max (IDM) | 400A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and breakdown voltage of the CSD19506KCS?
The CSD19506KCS supports a maximum drain current (ID) of 273A and features an 80V minimum drain-source breakdown voltage, making it suitable for high-current, medium-voltage power conversion applications.
What does avalanche-rated mean for the CSD19506KCS?
Avalanche-rated means the CSD19506KCS can safely absorb energy during avalanche breakdown events without permanent damage. With an avalanche energy rating (Eas) of 832mJ, it provides robust protection in inductive switching circuits where voltage spikes may exceed the rated breakdown voltage.
What are typical applications for the CSD19506KCS MOSFET?
The CSD19506KCS is commonly used in synchronous DC-DC converters, motor drive circuits, industrial power supplies, and automotive power management systems. Its ultra-low 2.8mΩ on-resistance and 273A current rating make it excellent for high-efficiency, high-current switching applications.
What package does the CSD19506KCS come in and is it RoHS compliant?
The CSD19506KCS comes in a Transistor Outline Vertical package with drain case connection. It is fully RoHS compliant (Pb-free code: Yes) and rated for a 15-year end-of-life (YTEOL), ensuring long-term availability and environmental compliance.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
More from Texas Instruments
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4498 | $0.45 |
| 10+ | $0.4488 | $4.49 |
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