CSD18510KTTAlternatives & Equivalent Parts
About CSD18510KTT
CSD18510KTT is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | CSD18510KTTSource | CSD18510KTTT | TDA7269A | 24LC64-E/SN | ERJP6WF3302V | CSD18510KCS |
|---|---|---|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | STMicroelectronics | Microchip | Panasonic | Texas Instruments |
| Package Type | Other | Other | Transistor Outline, Vertical | Small Outline Packages | Resistor Chip | Transistor Outline, Vertical |
| Pin Count | 3 | 3 | 11 | 8 | 2 | 3 |
| Temperature Range | -55.0°C ~ 175.0°C | -55.0°C ~ 175.0°C | ~ 70.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 155.0°C | -55.0°C ~ 175.0°C |
| Price | $1.0000 | $1.7100 | $1.4175 | $0.4800 | $0.1870 | $0.9290 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | NOT RECOMMENDED | ACTIVE |
| Electrical Parameters | ||||||
| Pbfree Code | Yes | Yes | — | Yes | — | Yes |
| Date Of Intro | 2016-12-17 | 2016-12-17 | — | — | — | 2017-03-03 |
| YTEOL | 15 | 15 | 5 | 8 | 3 | 15 |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED | — | — | — | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 328 mJ | 328 mJ | — | — | — | 328 mJ |
| Case Connection | DRAIN | DRAIN | — | — | — | DRAIN |
| Configuration | SINGLE | SINGLE | — | — | — | SINGLE |
| DS Breakdown Voltage-Min | 40 V | 40 V | — | — | — | 40 V |
| Drain Current-Max (ID) | 200 A | 200 A | — | — | — | 200 A |
| Drain-source On Resistance-Max | 0.0026 Ω | 0.0026 Ω | — | — | — | 0.0026 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 551 pF | 551 pF | — | — | — | 551 pF |
| JEDEC-95 Code | TO-263AB | TO-263AB | — | — | — | TO-220AB |
| JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 | R-PZIP-T11 | R-PDSO-G8 | — | R-PSFM-T3 |
| JESD-609 Code | e3 | e3 | e3 | e3 | e3 | e3 |
| Number of Elements | 1 | 1 | — | — | — | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | SYNCHRONOUS | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR PACKAGE | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMT | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | 260 | — | 260 | — | — |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | — | — | — | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 400 A | 400 A | — | — | — | 400 A |
| Surface Mount | YES | YES | NO | YES | YES | NO |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) - annealed | Matte Tin (Sn) | MATTE TIN OVER NICKEL | Matte Tin (Sn) |
| Terminal Form | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | — | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE | ZIG-ZAG | DUAL | — | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | — | — | — | — |
| Transistor Application | SWITCHING | SWITCHING | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | SILICON | — | — | — | SILICON |
| ## CSD18510KTT Alternates Showing results | Image | — | — | — | — | — |
| Factory Lead Time | — | — | 12 Weeks | 13 Weeks | 15 Weeks | — |
| Bandwidth-Nom | — | — | 22 kHz | — | — | — |
| Consumer IC Type | — | — | CLASS AB AUDIO AMPLIFIER | — | — | — |
| Gain | — | — | 30 dB | — | — | — |
| Harmonic Distortion | — | — | 10% | — | — | — |
| Number of Channels | — | — | 2 | — | — | — |
| Number of Functions | — | — | 1 | 1 | — | — |
| Output Power-Nom | — | — | 14 W | — | — | — |
| Package Equivalence Code | — | — | ZIP11,.2,.17,67TB | SOP8,.25 | — | — |
| Qualification Status | — | — | Not Qualified | Not Qualified | — | — |
| Supply Current-Max | — | — | 100 mA | 0.003 mA | — | — |
| Supply Voltage-Max (Vsup) | — | — | 20 V | 5.5 V | — | — |
| Supply Voltage-Min (Vsup) | — | — | 5 V | 2.5 V | — | — |
| Technology | — | — | BIPOLAR | CMOS | METAL GLAZE/THICK FILM | — |
| Temperature Grade | — | — | COMMERCIAL | AUTOMOTIVE | — | — |
| Terminal Pitch | — | — | 1.7 mm | 1.27 mm | — | — |
| Manufacturer Package Code | — | — | — | SOIC-8 | — | — |
| Clock Frequency-Max (fCLK) | — | — | — | 0.4 MHz | — | — |
| Data Retention Time-Min | — | — | — | 200 | — | — |
| Endurance | — | — | — | 1000000 Write/Erase Cycles | — | — |
| I2C Control Byte | — | — | — | 1010DDDR | — | — |
| Memory Density | — | — | — | 65536 bit | — | — |
| Memory IC Type | — | — | — | EEPROM | — | — |
| Memory Width | — | — | — | 8 | — | — |
| Number of Ports | — | — | — | 1 | — | — |
| Number of Words | — | — | — | 8192 words | — | — |
| Number of Words Code | — | — | — | 8000 | — | — |
| Organization | — | — | — | 8KX8 | — | — |
| Output Characteristics | — | — | — | OPEN-DRAIN | — | — |
| Parallel/Serial | — | — | — | SERIAL | — | — |
| Programming Voltage | — | — | — | 4.5 V | — | — |
| Serial Bus Type | — | — | — | I2C | — | — |
| Standby Current-Max | — | — | — | 0.000005 A | — | — |
| Supply Voltage-Nom (Vsup) | — | — | — | 4.5 V | — | — |
| Write Cycle Time-Max (tWC) | — | — | — | 5 ms | — | — |
| Write Protection | — | — | — | HARDWARE | — | — |
| Reach Compliance Code | — | — | — | — | Compliant | — |
| Construction | — | — | — | — | Rectangular | — |
| Mounting Feature | — | — | — | — | SURFACE MOUNT | — |
| Package Height | — | — | — | — | 0.65 mm | — |
| Package Length | — | — | — | — | 2 mm | — |
| Package Width | — | — | — | — | 1.25 mm | — |
| Packing Method | — | — | — | — | TR, PUNCHED PAPER, 7 INCH | — |
| Rated Power Dissipation (P) | — | — | — | — | 0.5 W | — |
| Rated Temperature | — | — | — | — | 70 °C | — |
| Reference Standard | — | — | — | — | IEC60115-8 | — |
| Resistance | — | — | — | — | 33000 Ω | — |
| Resistor Type | — | — | — | — | FIXED RESISTOR | — |
| Size Code | — | — | — | — | 0805 | — |
| Temperature Coefficient | — | — | — | — | 200 ppm/°C | — |
| Terminal Shape | — | — | — | — | WRAPAROUND | — |
| Tolerance | — | — | — | — | 1% | — |
| Working Voltage | — | — | — | — | 150 V | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 5 alternatives for CSD18510KTT — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
suggested
suggested
Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Why Look for Alternatives?
Finding alternatives for CSD18510KTT is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD18510KTT replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to CSD18510KTT?
Known equivalents for CSD18510KTT include CSD18510KTTT, TDA7269A, 24LC64-E/SN. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD18510KTT?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD18510KTT alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.