CSD17307Q5AAlternatives & Equivalent Parts

About CSD17307Q5A

CSD17307Q5A is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

Need pricing on these alternatives?

Get one quote covering all 10 alternatives for CSD17307Q5A — response within 24 hours.

Specification Comparison

ParameterCSD17307Q5ASourceLMZ10505TZX-ADJ/NOPBSTEF05LPURTPS22990DMLRCSD17305Q5ACSD17301Q5ACSD17306Q5ACSD17303Q5CSD17308Q3CSD17309Q3CSD17304Q3
ManufacturerTexas InstrumentsTexas InstrumentsSTMicroelectronicsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas InstrumentsTexas Instruments
Package TypeOtherOtherSmall Outline No-leadOtherOtherOtherOther—Other—Other
Pin Count871111888—8—8
Temperature Range-55.0°C ~ 150.0°C-40.0°C ~ 85.0°C-40.0°C ~ 125.0°C-40.0°C ~ 105.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C—-55.0°C ~ 150.0°C—-55.0°C ~ 150.0°C
Price$0.2179$6.6302$0.5420$0.3030$0.6420$0.2962$0.4770$0.7307$0.3104$0.4075$0.2963
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE—ACTIVE—ACTIVE
Electrical Parameters
Pbfree CodeYesYes—YesYesYesYes—Yes—Yes
YTEOL15157.115151515—15—15
Additional FeatureAVALANCHE RATED—JUNCTION TEMPERATURE CONSIDERED—AVALANCHE RATEDAVALANCHE RATEDAVALANCHE RATED—AVALANCHE RATED—AVALANCHE RATED
Avalanche Energy Rating (Eas)54 mJ———304 mJ414 mJ274 mJ—65 mJ—88 mJ
Case ConnectionDRAIN———DRAINDRAINDRAIN—DRAIN—DRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE———SINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE—SINGLE WITH BUILT-IN DIODE—SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V———30 V30 V30 V—30 V—30 V
Drain Current-Max (ID)73 A———100 A100 A100 A—50 A—60 A
Drain-source On Resistance-Max0.0173 Ω———0.0054 Ω0.0037 Ω0.0054 Ω—0.0165 Ω—0.0126 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR———METAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)36 pF———103 pF105 pF73 pF—35 pF—38 pF
JESD-30 CodeR-PDSO-N8R-PSSO-G7S-PDSO-N10R-PDSO-N10R-PDSO-N8R-PDSO-N8R-PDSO-N8—R-PDSO-N8—R-PDSO-N8
JESD-609 Codee3——e4e3e3e3—e3—e3
Number of Elements1———111—1—1
Operating ModeENHANCEMENT MODE———ENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE—ENHANCEMENT MODE—ENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY—PLASTIC/EPOXY—PLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARSQUARERECTANGULARRECTANGULARRECTANGULARRECTANGULAR—RECTANGULAR—RECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINE, HEAT SINK/SLUGSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILESMALL OUTLINE, HEAT SINK/SLUGSMALL OUTLINESMALL OUTLINESMALL OUTLINE—SMALL OUTLINE—SMALL OUTLINE
Peak Reflow Temperature (Cel)260245—260260260260—260—260
Polarity/Channel TypeN-CHANNEL———N-CHANNELN-CHANNELN-CHANNEL—N-CHANNEL—N-CHANNEL
Power Dissipation-Max (Abs)3 W———3.1 W3.2 W3.2 W—28 W—2.7 W
Pulsed Drain Current-Max (IDM)92 A———181 A181 A155 A—78 A—88 A
Qualification StatusNot QualifiedNot Qualified——Not QualifiedNot QualifiedNot Qualified—Not Qualified—Not Qualified
Surface MountYESYESYESYESYESYESYES—YES—YES
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)—Nickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn)—Matte Tin (Sn)—Matte Tin (Sn)
Terminal FormNO LEADGULL WINGNO LEADNO LEADNO LEADNO LEADNO LEAD—NO LEAD—NO LEAD
Terminal PositionDUALSINGLEDUALDUALDUALDUALDUAL—DUAL—DUAL
Time@Peak Reflow Temperature-Max (s)3030—30303030—30—30
Transistor ApplicationSWITCHING———SWITCHINGSWITCHINGSWITCHING—SWITCHING—SWITCHING
Transistor Element MaterialSILICON———SILICONSILICONSILICON—SILICON—SILICON
Analog IC - Other Type—SWITCHING REGULATOR WITH BUILT IN INDUCTOReFUSELoad switch———————
Control Mode—VOLTAGE-MODE—————————
Control Technique—PULSE WIDTH MODULATION—————————
Input Voltage-Max—5.5 V—5.5 V———————
Input Voltage-Min—2.95 V—0.6 V———————
Input Voltage-Nom—3.3 V—————————
Number of Functions—111———————
Output Current-Max—5 A—————————
Output Voltage-Max—5 V—————————
Output Voltage-Min—0.8 V—————————
Package Equivalence Code—SMSIP7H,.55,50TBSOLCC10,.12,20————————
Switcher Configuration—BUCK—————————
Switching Frequency-Max—1160 kHz—————————
Terminal Pitch—1.27 mm0.5 mm0.5 mm———————
## LMZ10505TZX-ADJ/NOPB Alternates Showing results—Image—————————
Factory Lead Time——20 Weeks————————
Adjustable Threshold——NONO———————
Number of Channels——11———————
Supply Voltage-Max (Vsup)——8 V5.5 V———————
Supply Voltage-Min (Vsup)——4.5 V2.5 V———————
Supply Voltage-Nom (Vsup)——5 V3.3 V———————
Temperature Grade——AUTOMOTIVE————————
Date Of Intro———2016-07-09———————
## TPS22990DMLR Alternates Showing results———Image———————

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 10 alternatives for CSD17307Q5A — response within 24 hours.

Quick Links

CSD17305Q5Aby Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17301Q5Aby Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17306Q5Aby Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17303Q5by Texas Instruments

Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17308Q3by Texas Instruments

Power Field-Effect Transistor, 50A I(D), 30V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17309Q3by Texas Instruments

Power Field-Effect Transistor, 60A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

CSD17304Q3by Texas Instruments

Power Field-Effect Transistor, 60A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for CSD17307Q5A is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating CSD17307Q5A replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for CSD17307Q5A. Get expert recommendations within 24 hours.

FAQ

What is equivalent to CSD17307Q5A?

Known equivalents for CSD17307Q5A include LMZ10505TZX-ADJ/NOPB, STEF05LPUR, TPS22990DMLR. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of CSD17307Q5A?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify CSD17307Q5A alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.