CSD16406Q3 Texas Instruments MOSFET (N-Channel) (Other) In Stock
CSD16406Q3 is a 25V N-Channel NexFET MOSFET in a compact SON3x3 package, featuring ultra-low 7.4mΩ on-resistance and 60A drain current capacity. Avalanche-rated for robust reliability. From $0.29 in stock, worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- CSD16406Q3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2912(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low drain-source on-resistance of 7.4mΩ (max) for minimal conduction losses
- High drain current capability up to 60A for demanding power applications
- Avalanche-rated design (101mJ) ensures robust reliability under transient voltage spikes
- Compact SON3x3 package enables space-efficient PCB layouts
- 25V breakdown voltage with integrated body diode for versatile switching applications
Applications
The CSD16406Q3 is well-suited for synchronous buck converters, battery management systems, and DC-DC power conversion in mobile and computing platforms. Its low on-resistance and high current rating make it ideal for point-of-load regulators and motor drive circuits. This MOSFET is also commonly used in server power supplies and portable electronics requiring efficient power switching.
Specifications
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 101mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 25V |
| Drain Current-Max (ID) | 60A |
| Drain-source On Resistance-Max | 0.0074Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 80pF |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 46W |
| Pulsed Drain Current-Max (IDM) | 114A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and on-resistance of the CSD16406Q3?
The CSD16406Q3 supports a maximum drain current (ID) of 60A and features an ultra-low drain-source on-resistance (RDS(on)) of 7.4mΩ maximum, making it highly efficient for high-current power conversion applications.
What applications is the CSD16406Q3 suitable for?
This N-Channel NexFET MOSFET is ideal for synchronous buck converters, battery management systems, point-of-load regulators, server power supplies, and motor drive circuits. Its 25V rating and 60A current capacity suit a wide range of industrial and consumer power applications.
What does avalanche-rated mean for the CSD16406Q3?
Avalanche rating means the CSD16406Q3 can safely absorb energy during unclamped inductive switching events without damage. With an avalanche energy rating (Eas) of 101mJ, it provides enhanced robustness in applications with inductive loads or transient voltage spikes.
What package does the CSD16406Q3 come in, and what are its dimensions?
The CSD16406Q3 is housed in a SON3x3 (3mm x 3mm) surface-mount package. This compact footprint is ideal for space-constrained PCB designs while maintaining excellent thermal performance for high-current applications.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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