CSD16406Q3 Texas Instruments MOSFET (N-Channel) (Other) In Stock

Name: CSD16406Q3
Brand: Texas Instruments
SKU: CSD16406Q3
Availability: InStock

CSD16406Q3 is a 25V N-Channel NexFET MOSFET in a compact SON3x3 package, featuring ultra-low 7.4mΩ on-resistance and 60A drain current capacity. Avalanche-rated for robust reliability. From $0.29 in stock, worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Apr 2026

Package / Visual Reference

CSD16406Q3Other

Quick Facts

Manufacturer: Texas Instruments
Package: Other
Pin Count: 8
Lifecycle: ACTIVE
Datasheet: CSD16406Q3 Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.2912(MOQ 1)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of CSD16406Q3?

Ultra-low drain-source on-resistance of 7.4mΩ (max) for minimal conduction losses
High drain current capability up to 60A for demanding power applications
Avalanche-rated design (101mJ) ensures robust reliability under transient voltage spikes
Compact SON3x3 package enables space-efficient PCB layouts
25V breakdown voltage with integrated body diode for versatile switching applications

What is CSD16406Q3 used for?

The CSD16406Q3 is well-suited for synchronous buck converters, battery management systems, and DC-DC power conversion in mobile and computing platforms. Its low on-resistance and high current rating make it ideal for point-of-load regulators and motor drive circuits. This MOSFET is also commonly used in server power supplies and portable electronics requiring efficient power switching.

What are the specifications of CSD16406Q3?

Pbfree Code	Yes
YTEOL	15
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	101mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	25V
Drain Current-Max (ID)	60A
Drain-source On Resistance-Max	0.0074Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	80pF
JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	46W
Pulsed Drain Current-Max (IDM)	114A
Qualification Status	Not Qualified
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	NO LEAD
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99
HTS Code	8541.29.00.95

Where can I find the CSD16406Q3 datasheet?

CSD16406Q3 Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for CSD16406Q3?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain current and on-resistance of the CSD16406Q3?

The CSD16406Q3 supports a maximum drain current (ID) of 60A and features an ultra-low drain-source on-resistance (RDS(on)) of 7.4mΩ maximum, making it highly efficient for high-current power conversion applications.

What applications is the CSD16406Q3 suitable for?

This N-Channel NexFET MOSFET is ideal for synchronous buck converters, battery management systems, point-of-load regulators, server power supplies, and motor drive circuits. Its 25V rating and 60A current capacity suit a wide range of industrial and consumer power applications.

What does avalanche-rated mean for the CSD16406Q3?

Avalanche rating means the CSD16406Q3 can safely absorb energy during unclamped inductive switching events without damage. With an avalanche energy rating (Eas) of 101mJ, it provides enhanced robustness in applications with inductive loads or transient voltage spikes.

What package does the CSD16406Q3 come in, and what are its dimensions?

The CSD16406Q3 is housed in a SON3x3 (3mm x 3mm) surface-mount package. This compact footprint is ideal for space-constrained PCB designs while maintaining excellent thermal performance for high-current applications.

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AvailabilityIn Stock

Reference Price (USD)

From $0.2912

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
1+	$0.4422	$0.44
92+	$0.4284	$39.41
108+	$0.3360	$36.29
596+	$0.2912	$173.56

pcs

Unit price: $0.4422 · Total: $0.44

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Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

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CSD16406Q3 Texas Instruments MOSFET (N-Channel) (Other) In Stock

What are the key features of CSD16406Q3?

What is CSD16406Q3 used for?

What are the specifications of CSD16406Q3?

Compliance & Regulatory

Where can I find the CSD16406Q3 datasheet?

What are equivalent replacements for CSD16406Q3?

Frequently Asked Questions

What is the maximum drain current and on-resistance of the CSD16406Q3?

What applications is the CSD16406Q3 suitable for?

What does avalanche-rated mean for the CSD16406Q3?

What package does the CSD16406Q3 come in, and what are its dimensions?

Related Guides

XITCORP SSD Controllers: RISC-V Architecture and SM2/SM3/SM4 National Cryptography

SM2, SM3, SM4 National Cryptography in SSDs: A Design Guide for Secure Storage

Enterprise vs Industrial SSDs: How to Choose by PLP, DWPD, and Wide-Temperature Endurance

150141RS73100 Red LED Indicator and Current-Resistor Design Guide

Why Buy from FindMyChip

About Texas Instruments

More from Texas Instruments

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