CSD16327Q3Alternatives & Equivalent Parts
About CSD16327Q3
CSD16327Q3 is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Specification Comparison
| Parameter | CSD16327Q3Source | CSD16301Q2 | LM2611AMF/NOPB | TPS630701RNMR | TLV2369IDR | CSD16327Q3T | TPS552882QRPMRQ1 |
|---|---|---|---|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package Type | Other | Other | SOT23 (5-Pin) | Other | Small Outline Packages | Other | Other |
| Pin Count | 9 | 6 | 5 | 15 | 8 | 9 | 30 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -40.0°C ~ 125.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 150.0°C | -40.0°C ~ 150.0°C |
| Price | $0.3672 | $0.1144 | $1.3204 | $0.7158 | $0.6740 | $0.3971 | $3.9203 |
| Electrical Parameters | |||||||
| Pbfree Code | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| YTEOL | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| Additional Feature | AVALANCHE RATED | — | — | — | — | AVALANCHE RATED | — |
| Avalanche Energy Rating (Eas) | 125 mJ | 10 mJ | — | — | — | 125 mJ | — |
| Case Connection | DRAIN | DRAIN | — | — | — | DRAIN | — |
| Configuration | SINGLE | SINGLE | — | — | — | SINGLE | — |
| DS Breakdown Voltage-Min | 25 V | 25 V | — | — | — | 25 V | — |
| Drain Current-Max (ID) | 60 A | 5 A | — | — | — | 60 A | — |
| Drain-source On Resistance-Max | 0.0065 Ω | 0.034 Ω | — | — | — | 0.0065 Ω | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR | — |
| Feedback Cap-Max (Crss) | 65 pF | 17 pF | — | — | — | 65 pF | — |
| JESD-30 Code | R-PDSO-N8 | R-PDSO-N6 | R-PDSO-G5 | R-PQCC-N15 | R-PDSO-G8 | R-PDSO-N8 | R-PBCC-N26 |
| JESD-609 Code | e3 | e4 | e3 | e3 | e4 | e3 | e3 |
| Number of Elements | 1 | 1 | — | — | — | 1 | — |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | — | — | ENHANCEMENT MODE | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | CHIP CARRIER | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | — | — | — | N-CHANNEL | — |
| Power Dissipation-Max (Abs) | 74 W | 2.3 W | — | — | — | 74 W | — |
| Pulsed Drain Current-Max (IDM) | 112 A | 20 A | — | — | — | 112 A | — |
| Surface Mount | YES | YES | YES | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Tin (Sn) |
| Terminal Form | NO LEAD | NO LEAD | GULL WING | NO LEAD | GULL WING | NO LEAD | NO LEAD |
| Terminal Position | DUAL | DUAL | DUAL | QUAD | DUAL | DUAL | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Transistor Application | SWITCHING | SWITCHING | — | — | — | SWITCHING | — |
| Transistor Element Material | SILICON | SILICON | — | — | — | SILICON | — |
| ## CSD16327Q3 Alternates Showing results | Image | — | — | — | — | — | — |
| Qualification Status | — | Not Qualified | Not Qualified | — | — | — | — |
| Analog IC - Other Type | — | — | SWITCHING REGULATOR | SWITCHING REGULATOR | — | — | SWITCHING REGULATOR |
| Control Mode | — | — | CURRENT-MODE | CURRENT-MODE | — | — | CURRENT-MODE |
| Control Technique | — | — | PULSE WIDTH MODULATION | PULSE WIDTH MODULATION | — | — | PULSE WIDTH MODULATION |
| Input Voltage-Max | — | — | 14 V | 16 V | — | — | 36 V |
| Input Voltage-Min | — | — | 2.7 V | 2 V | — | — | 2.7 V |
| Input Voltage-Nom | — | — | 5 V | 3 V | — | — | 12 V |
| Number of Functions | — | — | 1 | 1 | 2 | — | 1 |
| Output Current-Max | — | — | 0.4 A | 2 A | — | — | 6.35 A |
| Output Voltage-Max | — | — | -1.23 V | 5.05 V | — | — | 21.26 V |
| Output Voltage-Min | — | — | -32 V | 4.95 V | — | — | 0.8 V |
| Switcher Configuration | — | — | INVERTER | BUCK-BOOST | — | — | BUCK-BOOST |
| Switching Frequency-Max | — | — | 1400 kHz | 2800 kHz | — | — | 2200 kHz |
| Technology | — | — | BICMOS | BICMOS | CMOS | — | BICMOS |
| Temperature Grade | — | — | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | — | AUTOMOTIVE |
| Terminal Pitch | — | — | 0.95 mm | 0.5 mm | 1.27 mm | — | — |
| ## LM2611AMF/NOPB Alternates Showing results | — | — | Image | — | — | — | — |
| Date Of Intro | — | — | — | 2016-08-04 | 2016-06-11 | — | — |
| Output Voltage-Nom | — | — | — | 5 V | — | — | 20 V |
| ## TPS630701RNMR Alternates Showing results | — | — | — | Image | — | — | — |
| Amplifier Type | — | — | — | — | OPERATIONAL AMPLIFIER | — | — |
| Architecture | — | — | — | — | VOLTAGE-FEEDBACK | — | — |
| Average Bias Current-Max (IIB) | — | — | — | — | 0.00011 µA | — | — |
| Bias Current-Max (IIB) @25C | — | — | — | — | 0.00011 µA | — | — |
| Common-mode Reject Ratio-Min | — | — | — | — | 80 dB | — | — |
| Common-mode Reject Ratio-Nom | — | — | — | — | 110 dB | — | — |
| Frequency Compensation | — | — | — | — | YES | — | — |
| Input Offset Voltage-Max | — | — | — | — | 2000 µV | — | — |
| Low-Bias | — | — | — | — | YES | — | — |
| Low-Offset | — | — | — | — | NO | — | — |
| Micropower | — | — | — | — | YES | — | — |
| Packing Method | — | — | — | — | TR | — | — |
| Power | — | — | — | — | NO | — | — |
| Programmable Power | — | — | — | — | NO | — | — |
| Slew Rate-Nom | — | — | — | — | 0.005 V/us | — | — |
| Supply Current-Max | — | — | — | — | 0.0026 mA | — | — |
| Supply Voltage Limit-Max | — | — | — | — | 7 V | — | — |
| Supply Voltage-Nom (Vsup) | — | — | — | — | 5 V | — | 12 V |
| Unity Gain BW-Nom | — | — | — | — | 12 | — | — |
| Voltage Gain-Min | — | — | — | — | 10000 | — | — |
| Wideband | — | — | — | — | NO | — | — |
| Screening Level | — | — | — | — | — | — | AEC-Q100 |
| Supply Current-Max (Isup) | — | — | — | — | — | — | 0.86 mA |
| ## TPS552882QRPMRQ1 Alternates Showing results | — | — | — | — | — | — | Image |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
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Power Field-Effect Transistor, 60A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Why Look for Alternatives?
Finding alternatives for CSD16327Q3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD16327Q3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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What is equivalent to CSD16327Q3?
Known equivalents for CSD16327Q3 include CSD16301Q2, LM2611AMF/NOPB, TPS630701RNMR. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD16327Q3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD16327Q3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.