CBR08C150FAGAC Kemet Capacitor (Capacitor Chip Non-polarised) In Stock
The CBR08C150FAGAC is a Kemet ultra-high-Q, low-ESR Class I RF MLCC capacitor with 15 pF capacitance and ±1% tolerance in a compact SMD chip package. It features C0G (NP0) dielectric for zero capacitance drift with temperature and voltage, making it ideal for RF resonator circuits, impedance matching networks, and filter designs in wireless communications, radar, and microwave applications up to several GHz.
- Manufacturer
- Kemet
- Package
- Capacitor Chip Non-polarised
- Pin Count
- 2
- Lifecycle
- ACTIVE
- Datasheet
- CBR08C150FAGAC Datasheet PDF
- Category
- Capacitor
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 15 pF C0G (NP0) Class I dielectric with near-zero temperature coefficient (±30 ppm/°C) for stable RF tuning across -55°C to +125°C
- Ultra-high Q factor and extremely low ESR enabling high-efficiency resonator and filter networks in GHz-range RF circuits
- ±1% (F-grade) tight capacitance tolerance for precision impedance matching in antenna tuning and RF front-end filter design
- Low-loss SMD chip format compatible with automated high-frequency PCB assembly on 50 Ω microstrip and stripline layouts
- RoHS-compliant ATC/KEMET CBR08 series construction rated for RF power levels in transmitter and transceiver applications
Applications
The CBR08C150FAGAC is used in RF matching networks, resonator tank circuits, and bandpass filter designs for wireless transceivers operating in the 800 MHz to 6 GHz frequency range, including LTE, Wi-Fi 6, and 5G NR sub-6 GHz front-end modules. Its 15 pF C0G dielectric and ultra-high Q factor make it the preferred choice in voltage-controlled oscillator (VCO) tank circuits and PIN diode attenuator matching stages where capacitance stability under temperature variation is critical. Radar front-end designers and satellite communication engineers also specify it in microwave filter assemblies where ESR-induced insertion loss must remain below 0.1 dB across the operating band.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Why is C0G dielectric critical for the CBR08C150FAGAC in an RF filter design above 1 GHz?
C0G (NP0) dielectric in the CBR08C150FAGAC maintains its 15 pF capacitance within ±30 ppm/°C across the full -55°C to +125°C operating range, meaning the capacitance shifts by less than 0.55 pF over 185°C temperature swing. In an RF bandpass filter at 2.4 GHz, a 1 pF capacitance drift shifts the center frequency by roughly 16 MHz, moving signals outside the 22 MHz channel bandwidth. Class II dielectrics such as X7R would drift 5 to 15 pF under the same temperature and DC bias conditions, making C0G mandatory for stable GHz-range filter performance.
What tolerance grade does the CBR08C150FAGAC carry and how does it affect impedance matching accuracy?
The CBR08C150FAGAC has an F-grade ±1% capacitance tolerance, corresponding to a ±0.15 pF maximum deviation from the nominal 15 pF value. At 2.4 GHz, a 0.15 pF deviation represents a reactance change of approximately 4.4 Ω, which can shift the reflection coefficient of a matching network by several tenths of a dB in a 50 Ω system. Using ±1% tolerance parts keeps impedance matching loss below 0.05 dB, satisfying the return-loss requirements of most LTE and Wi-Fi 6 power amplifier output stages.
How does the low ESR of the CBR08C150FAGAC improve efficiency in a VCO tank circuit at 900 MHz?
In a VCO LC tank circuit at 900 MHz, the capacitor ESR directly reduces the unloaded Q factor of the resonator. The CBR08C150FAGAC's ultra-high Q (typically above 1000 at 1 GHz) means its ESR at resonance is below 0.1 Ω at 15 pF and 900 MHz. A lower-Q Class II MLCC with ESR of 0.5 Ω would reduce tank Q by a factor of 5, increasing oscillator phase noise by approximately 14 dB at 100 kHz offset — unacceptable for narrowband cellular and IoT radio applications.
Can the CBR08C150FAGAC be used as a DC blocking capacitor in an SMA connector feedthrough at 5 GHz?
At 15 pF, the CBR08C150FAGAC presents a reactance of approximately 2.1 Ω at 5 GHz, which is low enough to pass RF signals with minimal insertion loss in a 50 Ω system — the pass loss is below 0.04 dB when the series reactance is under 2.2 Ω. Its C0G dielectric and ultra-high Q ensure the DC block remains stable across operating temperature, and the SMD chip form factor integrates cleanly into grounded-coplanar waveguide or microstrip feedthrough layouts with 50 Ω pad dimensions. It is a suitable 5 GHz DC blocking capacitor for SMA panel-mount feedthrough designs.
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