C3M0065090D Wolfspeed MOSFET (N-Channel) (Other) In Stock
C3M0065090D is a 900V, 65mΩ Silicon Carbide (SiC) N-Channel MOSFET from Wolfspeed, featuring 36A drain current, 110mJ avalanche energy rating, and industrial qualification in a TO-247-3 package. From $8.18, in stock worldwide shipping.
- Manufacturer
- Wolfspeed
- Package
- Other
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- C3M0065090D Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $8.1800(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 900V breakdown voltage with ultra-low 65mΩ on-resistance for high-efficiency power conversion
- Industrial qualified SiC MOSFET with 36A continuous drain current capability
- Built-in body diode eliminates need for external freewheeling diode, reducing BOM cost
- Exceptional 110mJ avalanche energy rating for robust operation in demanding environments
- TO-247-3 package enables easy PCB integration and excellent thermal dissipation
Applications
The C3M0065090D is ideal for high-frequency, high-efficiency power electronics applications such as solar inverters, EV on-board chargers, and industrial motor drives where wide-bandgap SiC technology significantly reduces switching losses. Its 900V rating and industrial qualification make it well-suited for grid-tied power converters and uninterruptible power supplies (UPS). The device also excels in DC-DC converters and power factor correction (PFC) circuits demanding low conduction losses and fast switching performance.
Specifications
| Pbfree Code | Yes |
| YTEOL | 3 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900V |
| Drain Current-Max (ID) | 36A |
| Drain-source On Resistance-Max | 0.078Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5pF |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 90A |
| Reference Standard | IEC-60747-8-4 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for C3M0065090D:
suggested
suggested
Power Field-Effect Transistor, 35A I(D), 900V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What are the key electrical specifications of the C3M0065090D?
The C3M0065090D is a SiC MOSFET with a 900V drain-source breakdown voltage, 65mΩ typical on-resistance (78mΩ max), 36A maximum drain current, 5pF feedback capacitance (Crss), and 110mJ avalanche energy rating (Eas), making it ideal for high-voltage power conversion applications.
What applications is the C3M0065090D suitable for?
The C3M0065090D is designed for high-efficiency power electronics including solar inverters, electric vehicle (EV) on-board chargers, industrial motor drives, DC-DC converters, power factor correction (PFC) circuits, and uninterruptible power supplies (UPS). Its SiC technology enables higher switching frequencies and reduced energy losses compared to silicon MOSFETs.
What package does the C3M0065090D use and is it RoHS compliant?
The C3M0065090D comes in a TO-247-3 through-hole package, which offers excellent thermal dissipation and straightforward PCB mounting. It is RoHS compliant (Pbfree Code: Yes) and is industrially qualified, ensuring reliability in demanding environments with extended product lifecycle support (YTEOL: 3).
What are suitable alternatives or replacements for the C3M0065090D?
Suitable alternatives include other Wolfspeed SiC MOSFETs in the C3M series with similar 900V ratings, as well as competing parts from ON Semiconductor (NVBG015N090SC1), STMicroelectronics (SCT30N120), and Rohm (SCT3030AL). When selecting a replacement, ensure the drain current, on-resistance, and package type match your design requirements.
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About Wolfspeed
Wolfspeed is a leading electronic component manufacturer. FindMyChip sources Wolfspeed ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.4500 | $14.45 |
| 10+ | $14.2400 | $142.40 |
| 18+ | $11.6418 | $209.55 |
| 19+ | $8.1800 | $155.42 |
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