C2M0045170D Cree, Inc. MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Cree C2M0045170D is a 1700 V, 75 A silicon carbide (SiC) N-channel MOSFET with 45 mΩ max on-resistance and integrated body diode, packaged in TO-247 for high-efficiency power conversion. Key specs: 1700 V VDS, 75 A ID, 45 mΩ RDS(on). Available in stock with worldwide shipping.
- Manufacturer
- Cree, Inc.
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- C2M0045170D Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $94.9000(MOQ 3)
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of C2M0045170D?
- 1700 V drain-source breakdown voltage enabling operation in high-voltage industrial power stages
- 75 A maximum drain current with 45 mΩ on-resistance for low conduction loss in SiC power designs
- Integrated built-in body diode with 6.7 pF feedback capacitance for fast switching at 1700 V
- TO-247 package with drain-connected case for efficient heatsink mounting in high-power converters
What is C2M0045170D used for?
The C2M0045170D SiC MOSFET is designed for high-voltage power conversion applications including EV charging stations, solar string inverters, and industrial motor drives operating at 1700 V bus voltages. Its 45 mΩ on-resistance at 75 A allows efficient switching at frequencies above 20 kHz, reducing transformer and filter sizes compared to silicon IGBTs in the same power class. The TO-247 package with drain-case connection simplifies thermal management in multi-switch power modules requiring heatsink-isolated mounting.
What are the specifications of C2M0045170D?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1700V |
| Drain Current-Max (ID) | 75A |
| Drain-source On Resistance-Max | 0.07Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 6.7pF |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 338W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Reference Standard | IEC-60747-8-4 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the C2M0045170D datasheet?
C2M0045170D Datasheet DownloadOfficial datasheet from Cree, Inc.
What are equivalent replacements for C2M0045170D?
Compatible alternatives and drop-in replacements for C2M0045170D:
Frequently Asked Questions
How does the C2M0045170D 45 mΩ on-resistance compare to silicon IGBTs at 1700 V for conduction loss?
At 75 A drain current, the C2M0045170D dissipates approximately 253 mW of conduction loss per switch (I² × RDS(on) = 75² × 0.045), while a comparable 1700 V silicon IGBT typically exhibits 2 V saturation voltage resulting in 150 W at the same current. This 40× improvement in conduction loss at high frequencies above 20 kHz makes the SiC MOSFET substantially more efficient in solar inverter and EV charger power stages.
At what switching frequency can the C2M0045170D operate effectively in an EV fast-charging converter?
The C2M0045170D supports switching frequencies of 20 kHz to 100 kHz in 1700 V EV charging converters, enabled by its small 6.7 pF feedback capacitance (Crss) which minimizes Miller plateau switching losses. At 50 kHz, inductors and EMI filters shrink by approximately 50% compared to 20 kHz designs, reducing total converter size and weight, key constraints in on-board 22 kW EV charger modules.
When designing a 1700 V three-phase motor drive, what thermal management approach suits the C2M0045170D TO-247 package?
The TO-247 package's drain-connected metal case allows direct heatsink contact with a single thermal pad, achieving junction-to-case thermal resistance under 0.5°C/W. In a three-phase motor drive running at 400 A total output and 1700 V bus, each C2M0045170D switch handling 75 A should be mounted with thermal compound on an aluminum heatsink sized for at least 10°C/W overall resistance, keeping junction temperature below 150°C at 25°C ambient.
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Why Buy from FindMyChip
About Cree, Inc.
Cree, Inc. is a leading electronic component manufacturer. FindMyChip sources Cree, Inc. ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $110.0000 | $330.00 |
| 10+ | $102.0000 | $1020.00 |
| 30+ | $94.9000 | $2847.00 |
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