BZV55-C13,115Alternatives & Equivalent Parts

About BZV55-C13,115

BZV55-C13,115 is a Zener Diode component manufactured by Nexperia. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterBZV55-C13,115SourceIPD90P03P4L04ATMA1XAL4030-472MEC
ManufacturerNexperiaInfineonCOILCRAFT
Package TypeOtherOtherOther
Pin Count232
Temperature Range-65.0°C ~ 200.0°C—-40.0°C ~ 125.0°C
Price$0.0136$0.8632$0.9300
StockIn StockIn StockIn Stock
LifecycleACTIVEOBSOLETEACTIVE
Electrical Parameters
Manufacturer Package CodeSOD80C——
Factory Lead Time8 Weeks——
YTEOL6.907.8
Case ConnectionISOLATEDDRAIN—
ConfigurationSINGLESINGLE WITH BUILT-IN DIODE—
Diode Element MaterialSILICON——
Diode TypeZENER DIODE——
Dynamic Impedance-Max10 Ω——
JESD-30 CodeO-LELF-R2R-PSSO-G2—
JESD-609 Codee3——
Knee Impedance-Max110 Ω——
Number of Elements11—
Package Body MaterialGLASSPLASTIC/EPOXY—
Package ShapeROUNDRECTANGULAR—
Package StyleLONG FORMSMALL OUTLINESMT
Peak Reflow Temperature (Cel)260NOT SPECIFIED—
PolarityUNIDIRECTIONAL——
Power Dissipation-Max0.4 W——
Reference StandardIEC-60134AEC-Q101AEC-Q200
Reference Voltage-Nom13 V——
Reverse Current-Max0.1 µA——
Reverse Test Voltage8 V——
Surface MountYESYESYES
TechnologyZENER——
Terminal FinishTin (Sn)—Tin/Silver (Sn96.5Ag3.5)
Terminal FormWRAP AROUNDGULL WING—
Terminal PositionENDSINGLE—
Time@Peak Reflow Temperature-Max (s)40NOT SPECIFIED—
Voltage Temp Coeff-Max11 mV/°C——
Voltage Tol-Max5%——
Working Test Current5 mA——
Avalanche Energy Rating (Eas)—370 mJ—
DS Breakdown Voltage-Min—30 V—
Drain Current-Max (ID)—90 A—
Drain-source On Resistance-Max—0.0068 Ω—
FET Technology—METAL-OXIDE SEMICONDUCTOR—
JEDEC-95 Code—TO-252—
Operating Mode—ENHANCEMENT MODE—
Polarity/Channel Type—P-CHANNEL—
Pulsed Drain Current-Max (IDM)—360 A—
Transistor Application—SWITCHING—
Transistor Element Material—SILICON—
Pbfree Code——Yes
Case/Size Code——1616
Construction——Rectangular
Core Material——COMPOSITE
DC Resistance——0.0441 Ω
Inductance-Nom (L)——4.7 µH
Inductor Application——POWER INDUCTOR
Inductor Type——GENERAL PURPOSE INDUCTOR
Number of Functions——1
Package Height——3.1 mm
Package Length——4 mm
Package Width——4 mm
Packing Method——TR, Embossed Plastic, 7 Inch
Rated Current-Max——5.1 A
Self Resonance Frequency——36 MHz
Shape/Size Description——RECTANGULAR PACKAGE
Shielded——YES
Terminal Placement——DUAL ENDED
Terminal Shape——ONE SURFACE
Test Frequency——1 MHz
Tolerance——20%

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for BZV55-C13,115 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for BZV55-C13,115 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating BZV55-C13,115 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to BZV55-C13,115?

Known equivalents for BZV55-C13,115 include IPD90P03P4L04ATMA1, XAL4030-472MEC. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of BZV55-C13,115?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify BZV55-C13,115 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.