BYG23T-M3/TRAlternatives & Equivalent Parts

About BYG23T-M3/TR

BYG23T-M3/TR is a Diode component manufactured by Vishay. It comes in a Diodes Moulded package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

Need pricing on these alternatives?

Get one quote covering all 3 alternatives for BYG23T-M3/TR — response within 24 hours.

Specification Comparison

ParameterBYG23T-M3/TRSourceC2M0160120DSTTH3012WC0603C225K4PACTU
ManufacturerVishayCree, Inc.STMicroelectronicsKemet
Package TypeDiodes MouldedTransistor Outline, VerticalTransistor Outline, VerticalOther
Pin Count2322
Temperature Range~ 150.0°C—~ 175.0°C—
Price$0.1529$8.3823$1.5548$0.0180
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEOBSOLETEACTIVE—
Electrical Parameters
YTEOL605.95—
ApplicationGENERAL PURPOSE—HIGH VOLTAGE ULTRA FAST SOFT RECOVERY—
ConfigurationSINGLESINGLE WITH BUILT-IN DIODESINGLE—
Diode Element MaterialSILICON—SILICON—
Diode TypeRECTIFIER DIODE—RECTIFIER DIODE—
JEDEC-95 CodeDO-214ACTO-247DO-247—
JESD-30 CodeR-PDSO-F2R-PSFM-T3R-PSFM-T2—
JESD-609 Codee3—e3—
Number of Elements111—
Number of Phases1—1—
Output Current-Max1 A—30 A—
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY—
Package ShapeRECTANGULARRECTANGULARRECTANGULAR—
Package StyleSMALL OUTLINEFLANGE MOUNTFLANGE MOUNT—
Peak Reflow Temperature (Cel)260260NOT SPECIFIED—
Rep Pk Reverse Voltage-Max1300 V—1200 V—
Reverse Recovery Time-Max0.075 µs—0.115 µs—
Surface MountYESNONO—
TechnologyAVALANCHE———
Terminal FinishMatte Tin (Sn) - annealed—Tin (Sn)—
Terminal FormFLATTHROUGH-HOLETHROUGH-HOLE—
Terminal PositionDUALSINGLESINGLE—
Time@Peak Reflow Temperature-Max (s)4010NOT SPECIFIED—
Pbfree Code—Yes——
Case Connection—DRAIN——
DS Breakdown Voltage-Min—1200 V——
Drain Current-Max (ID)—19 A——
Drain-source On Resistance-Max—0.196 Ω——
FET Technology—METAL-OXIDE SEMICONDUCTOR——
Operating Mode—ENHANCEMENT MODE——
Polarity/Channel Type—N-CHANNEL——
Pulsed Drain Current-Max (IDM)—40 A——
Transistor Application—SWITCHING——
Transistor Element Material—SILICON CARBIDE——
Factory Lead Time——25 Weeks—
Additional Feature——FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY—
Forward Voltage-Max (VF)——1.8 V—
Non-rep Pk Forward Current-Max——210 A—
Qualification Status——Not Qualified—

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 3 alternatives for BYG23T-M3/TR — response within 24 hours.

Quick Links

Why Look for Alternatives?

Finding alternatives for BYG23T-M3/TR is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating BYG23T-M3/TR replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for BYG23T-M3/TR. Get expert recommendations within 24 hours.

FAQ

What is equivalent to BYG23T-M3/TR?

Known equivalents for BYG23T-M3/TR include C2M0160120D, STTH3012W, C0603C225K4PACTU. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of BYG23T-M3/TR?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify BYG23T-M3/TR alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.