BQ2204ASN-NG4 Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
Texas Instruments BQ2204ASN-NG4 is a battery-backed SRAM controller providing automatic data retention and power switchover for 16-pin SOIC static RAM. From $3.50, in stock, worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 16
- Lifecycle
- OBSOLETE
- Datasheet
- BQ2204ASN-NG4 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BQ2204ASN-NG4?
- Automatic power switchover between VCC and battery backup maintains SRAM data integrity during primary supply outages without software intervention
- On-chip voltage supervisor detects VCC droop and asserts chip-enable control to SRAM within microseconds, preventing corrupted writes during brownout
- Operates over -40°C to +85°C industrial temperature range, suitable for data-logging and industrial control systems requiring non-volatile SRAM
What is BQ2204ASN-NG4 used for?
The BQ2204ASN-NG4 is used in data-logging instruments, PLC memory modules, and real-time clock backup systems where SRAM contents must be preserved across power interruptions for hours or days. Its integrated power-switching and supervisory logic eliminates discrete backup circuits, simplifying designs that use 32 KB to 128 KB parallel SRAM for event buffers or configuration storage. The 16-pin SOIC package eases layout alongside standard JEDEC SRAM devices on industrial control boards.
What are the specifications of BQ2204ASN-NG4?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Adjustable Threshold | NO |
| Analog IC - Other Type | VOLTAGE SUPERVISOR/RESET IC |
| JESD-30 Code | R-PDSO-G16 |
| JESD-609 Code | e4 |
| Number of Channels | 1 |
| Number of Functions | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOP16,.25 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Current-Max (Isup) | 6mA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 4.5V |
| Supply Voltage-Nom (Vsup) | 5V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 2 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
Where can I find the BQ2204ASN-NG4 datasheet?
BQ2204ASN-NG4 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for BQ2204ASN-NG4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the BQ2204ASN-NG4 protect SRAM data during a primary supply failure?
The BQ2204ASN-NG4 continuously monitors VCC and, when it detects a droop below the threshold (typically 4.5 V on a 5 V rail), immediately deasserts the SRAM chip-enable and switches the SRAM power pin to the backup battery within 1 µs, preventing spurious write cycles that could corrupt stored data.
What SRAM densities and organizations are compatible with the BQ2204ASN-NG4 controller?
The BQ2204ASN-NG4 is designed for standard parallel SRAM devices with active-low chip-enable inputs, typically supporting densities from 32 KB to 512 KB in ×8 or ×16 organizations, including common 5 V JEDEC SRAMs used in legacy industrial and automotive data-logging applications.
What is the operating temperature range of the BQ2204ASN-NG4, and why does it matter for industrial use?
The BQ2204ASN-NG4 is rated from -40°C to +85°C, meeting the industrial temperature grade requirements for factory automation controllers, energy meters, and outdoor equipment where the ambient temperature can swing across the full 125°C span during normal operation.
Can the BQ2204ASN-NG4 work with a Li coin cell backup battery, and how long will data be retained?
Yes, the BQ2204ASN-NG4 is designed to switch SRAM power to a 3 V Li coin cell (such as a CR2032 with 220 mAh capacity) during VCC absence; a 128 KB SRAM drawing 2 µA in standby can retain data for several years from a single coin cell, depending on backup current specifications of the paired SRAM device.
How does the BQ2204ASN-NG4 compare to discrete power-fail and switchover circuits for SRAM backup?
Replacing a discrete circuit of a comparator, P-channel MOSFET, and logic gates with the BQ2204ASN-NG4 reduces component count from roughly 6 to 8 parts down to 1 IC, shrinks the switchover propagation delay to under 1 µs versus several microseconds for discrete designs, and guarantees production-tested timing coordination between chip-enable deassert and supply switchover.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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