BGSX22G5A10E6327XTSA1 Infineon Integrated Circuit (Other) In Stock
Infineon BGSX22G5A10E6327XTSA1 is a DPDT (Double-Pole Double-Throw) RF/microwave switch integrated circuit designed for antenna switching and signal routing in wireless applications up to 22 GHz. Delivered in a compact surface-mount package with low insertion loss and high isolation for demanding RF front-end designs. Available with a 4-week factory lead time and worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 10
- Lifecycle
- ACTIVE
- Datasheet
- BGSX22G5A10E6327XTSA1 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.2888(MOQ 250)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- DPDT RF switch architecture supporting dual antenna or signal path switching in a single IC for frequency bands up to 22 GHz
- High isolation between switched paths minimizing signal leakage and interference in multi-band antenna switching modules
- Compact surface-mount package enabling space-efficient RF front-end board layouts for 5G NR, Wi-Fi 6E, and millimeter-wave radar applications
- Low insertion loss design preserving RF signal integrity across the full 22 GHz operating frequency range in switched-path configurations
Applications
The BGSX22G5A10E6327XTSA1 is suited for antenna diversity switching and RF path selection in 5G NR sub-6 GHz and millimeter-wave handsets, Wi-Fi 6E access points, and automotive radar front-end modules operating up to 22 GHz. Its DPDT switching topology enables dual-port antenna selection or two-path signal routing in a single chip, reducing BOM count in multi-band wireless platforms. The device is also applicable in test and measurement instruments, phased-array radar systems, and satellite communication terminals where precise RF signal switching with minimal insertion loss is required across wide frequency ranges.
Specifications
| Factory Lead Time | 4Weeks |
| RF/Microwave Device Type | DPDT |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | 5A991.G |
| HTS Code | 8542.39.00.90 |
| Country of Origin | Germany, Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Up to what frequency does the BGSX22G5A10E6327XTSA1 maintain specified insertion loss performance in DPDT switching applications?
The BGSX22G5A10E6327XTSA1 is specified as an RF/microwave DPDT switch rated for operation up to 22 GHz, covering frequency bands from sub-1 GHz cellular to 5G NR FR2 millimeter-wave at 24 GHz and automotive 77 GHz radar harmonics. Across this 22 GHz operating range, the device maintains low insertion loss in the ON-state path while providing high isolation in the OFF-state path, making it suitable for single-IC antenna switching in multi-band 5G and Wi-Fi 6E radios where a single switch must cover frequency bands spanning more than one decade.
How does the DPDT topology of BGSX22G5A10E6327XTSA1 simplify antenna diversity circuit design compared to using two SPDT switches?
The DPDT configuration of the BGSX22G5A10E6327XTSA1 integrates two independent single-pole double-throw switch functions in a single IC, replacing what would otherwise require 2 discrete SPDT switch chips plus the associated decoupling capacitors, control logic, and PCB routing between them. This integration reduces board area by approximately 40% and eliminates an inter-chip RF routing path that would add 0.1 to 0.3 dB of additional insertion loss per path at frequencies above 10 GHz, preserving received signal strength at the antenna diversity combining circuit in compact 5G or WLAN module designs.
For a 5G NR FR2 mmWave handset design, what advantages does BGSX22G5A10E6327XTSA1 offer over PIN diode-based DPDT switches?
Compared to PIN diode-based DPDT switches used at millimeter-wave frequencies, the BGSX22G5A10E6327XTSA1 offers faster switching speeds below 1 µs and significantly lower DC bias current consumption, which is critical in battery-powered 5G handsets where the antenna switch is toggled thousands of times per second during beamsteering operations. Silicon-based IC switches like the BGSX22G5A10E6327XTSA1 also provide better control linearity at input power levels up to 10 dBm, reducing the intermodulation distortion that would otherwise degrade 5G NR signal quality when two or more frequency bands are simultaneously active in the antenna module.
What PCB layout guidelines apply when routing RF traces to the BGSX22G5A10E6327XTSA1 at 22 GHz on a standard FR4 substrate?
At 22 GHz, microstrip trace widths on standard FR4 substrate (dielectric constant approximately 4.2) must be reduced to approximately 0.3 mm to 0.4 mm to maintain 50 Ω characteristic impedance, and all RF port traces connected to the BGSX22G5A10E6327XTSA1 should be kept below 5 mm in length to minimize reflection losses from dielectric loss tangent above 0.02 at 22 GHz. Low-loss laminate materials with loss tangent below 0.005 such as Rogers 4350B are recommended for production designs where insertion loss budget across the switch plus board trace must remain below 1.5 dB at 22 GHz.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 250+ | $0.4100 | $102.50 |
| 500+ | $0.3930 | $196.50 |
| 1000+ | $0.3256 | $325.60 |
| 4500+ | $0.2950 | $1327.50 |
| 9000+ | $0.2900 | $2610.00 |
| 72000+ | $0.2888 | $20790.00 |
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