BCW 66KF Infineon Transistor BJT NPN (SOT23 (3-Pin)) In Stock
The BCW 66KF is a high-gain NPN bipolar junction transistor from Infineon in a compact 3-pin SOT-23 package, rated for 800 mA collector current and 45 V collector-emitter breakdown voltage. With its K-group hFE classification for superior current amplification, it excels in small-signal amplification and low-power switching. Available from stock worldwide with fast shipping.
- Manufacturer
- Infineon
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- BCW 66KF Datasheet PDF
- Category
- Transistor BJT NPN
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BCW 66KF?
- Rated for 800 mA collector current and 45 V VCEO enabling reliable low-to-medium power switching in consumer and industrial circuits
- High-gain K-group hFE (250–500 typ.) delivers superior current amplification for sensitive small-signal and audio amplifier stages
- Compact 3-pin SOT-23 package minimizes board footprint for space-constrained portable and handheld electronics designs
- Low saturation voltage reduces power dissipation in switching applications such as LED drivers and relay coil control
What is BCW 66KF used for?
The BCW 66KF is ideal for small-signal amplification, audio pre-amplification, and logic-level switching in consumer electronics, portable devices, and industrial sensor interfaces. Its 800 mA current rating and high-gain K-group hFE make it suitable for LED driving, relay coil control, and low-side load switching in embedded systems. The SOT-23 surface-mount package integrates efficiently into space-constrained PCB layouts.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
What are equivalent replacements for BCW 66KF?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the BCW 66KF NPN transistor?
The BCW 66KF supports up to 800 mA continuous collector current and 45 V collector-emitter breakdown voltage (VCEO), with a K-group hFE of 250 to 500, making it suitable for amplification and switching applications in low-power consumer electronics and industrial control circuits.
How does the high hFE gain of the BCW 66KF benefit audio and sensor amplifier designs?
The BCW 66KF's K-group hFE guarantees a current gain between 250 and 500, enabling stable amplification of weak input signals from sensors or microphones at collector currents up to 800 mA. This high gain range suits audio pre-amplifier stages, sensor signal conditioning, and precision analog circuits requiring consistent transistor performance.
When should a designer select the BCW 66KF over a standard NPN transistor for a switching circuit?
Designers choose the BCW 66KF when a 3-pin SOT-23 device capable of 800 mA collector current and hFE above 250 is needed, such as in driving high-brightness LEDs, relay coils, or motor pre-drive stages where limited base drive current requires high transistor gain to achieve reliable saturation and low-loss switching.
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