BAT64-04E6433 Infineon Diode (SOT23 (3-Pin)) In Stock

Name: BAT64-04E6433
Brand: Infineon
SKU: BAT64-04E6433
Availability: InStock

Infineon BAT64-04E6433 is a dual series Schottky diode rated 40 V, 250 mA with 5 ns recovery in a SOT-23 package. Optimized for RF detection, high-frequency rectification, and fast clamping. Available in stock with worldwide shipping.

END OF LIFEDiodeVerified Jul 2026

Package / Visual Reference

BAT64-04E6433SOT23 (3-Pin)

Quick Facts

Manufacturer: Infineon
Package: SOT23 (3-Pin)
Pin Count: 3
Lifecycle: END OF LIFE
Datasheet: BAT64-04E6433 Datasheet PDF
Category: Diode
Temp Range: ?°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of BAT64-04E6433?

Dual series Schottky configuration in a single SOT-23 package integrates two diodes for compact center-tap rectifier and clamping designs
5 ns ultra-fast reverse recovery time enables reliable high-frequency switching in RF detectors and switching power supplies
40 V reverse voltage and 250 mA current rating with 0.75 V maximum forward voltage for low-loss, high-efficiency rectification

What is BAT64-04E6433 used for?

The BAT64-04E6433 is designed for RF signal detection, high-frequency rectification, and voltage clamping in portable consumer electronics, wireless communications, and IoT devices. Its dual series configuration with 5 ns recovery time and 250 mA current rating makes it ideal for envelope detection in wireless receivers and EMC protection circuits. The compact SOT-23 package minimizes PCB footprint for space-sensitive applications in smartphones, wearables, and handheld instruments.

What are the specifications of BAT64-04E6433?

Pbfree Code	Yes
YTEOL	1
Application	GENERAL PURPOSE
Breakdown Voltage-Min	40V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE
Forward Voltage-Max (VF)	0.75V
JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3
Non-rep Pk Forward Current-Max	0.8A
Number of Elements	2
Number of Phases	1
Output Current-Max	0.25A
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Power Dissipation-Max	0.25W
Qualification Status	Not Qualified
Reference Standard	AEC-Q101
Rep Pk Reverse Voltage-Max	40V
Reverse Current-Max	2 µA
Reverse Recovery Time-Max	0.005 µs
Reverse Test Voltage	30V
Surface Mount	YES
Technology	SCHOTTKY
Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40
Package	SOT23 (3-Pin)

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99
HTS Code	8541.10.00.70
Country of Origin	Austria, Mainland China

Where can I find the BAT64-04E6433 datasheet?

BAT64-04E6433 Datasheet Download

Official datasheet from Infineon

What are equivalent replacements for BAT64-04E6433?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What recovery time and forward voltage does the BAT64-04E6433 offer for high-frequency switching circuits?

The BAT64-04E6433 achieves a 5 ns reverse recovery time and 0.75 V maximum forward voltage at 250 mA, enabling low-loss high-frequency rectification and fast switching in RF detection circuits operating at frequencies up to several hundred MHz.

How does the dual series configuration of BAT64-04E6433 benefit RF detector and mixer circuit designs?

The series-connected dual Schottky configuration allows BAT64-04E6433 to function as a balanced mixer or envelope detector at 40 V reverse standoff with 250 mA current handling, reducing component count in RF front-end circuits for Bluetooth, ZigBee, and ISM-band devices.

When is BAT64-04E6433 a better choice than separate single-diode Schottky components for compact PCB designs?

BAT64-04E6433 integrates two series-connected Schottky diodes in one SOT-23 package, replacing two discrete components while maintaining 40 V blocking voltage and 5 ns recovery time, reducing assembly cost and PCB area by up to 50% compared to separate diode solutions.

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