AUIRFP4568 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Infineon AUIRFP4568 is a single N-channel power MOSFET rated at 150 V drain-source breakdown voltage and 171 A maximum drain current with ultra-low on-resistance of 5.9 mΩ in a TO-247 package. Available worldwide with fast shipping.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- AUIRFP4568 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low Rds(on) of 5.9 mΩ minimizes conduction losses in high-current switching applications up to 171 A
- 150 V Vds breakdown rating suits motor drives, DC-DC converters, and industrial power supplies operating on standard 48 V or 100 V bus rails
- 763 mJ avalanche energy (Eas) rating provides robust protection against inductive load transients in motor control circuits
- Built-in body diode and single-die configuration simplifies circuit design in synchronous rectification and H-bridge topologies
Applications
The AUIRFP4568 is designed for high-efficiency power conversion stages in industrial motor drives, electric vehicle auxiliary inverters, and server power supplies where 150 V blocking voltage and 171 A continuous current capability are required. Its 5.9 mΩ on-resistance reduces switching-node conduction losses in synchronous buck converters and full-bridge circuits operating at switching frequencies up to several hundred kHz. The TO-247 package with drain-tab connection enables direct heatsink mounting, simplifying thermal management in high-power applications dissipating over 100 W.
Specifications
| Factory Lead Time | 53 Weeks, 1 Day |
| YTEOL | 3 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 763mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 150V |
| Drain Current-Max (ID) | 171A |
| Drain-source On Resistance-Max | 0.0059Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 203pF |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 517W |
| Pulsed Drain Current-Max (IDM) | 684A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Germany, Mainland China, Mexico, Taiwan |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the Infineon AUIRFP4568 power MOSFET?
The AUIRFP4568 is rated for a 150 V drain-source breakdown voltage, 171 A maximum continuous drain current, and an ultra-low drain-source on-resistance of 5.9 mΩ at Vgs = 10 V. Its 763 mJ avalanche energy rating ensures the device survives inductive load transients common in motor drive and DC-DC converter circuits.
In which power converter topologies can AUIRFP4568 be used to maximize efficiency?
The AUIRFP4568's 5.9 mΩ Rds(on) and 171 A current rating make it well suited for synchronous buck converters, full-bridge DC-DC converters, and bidirectional motor H-bridges operating on 24 V to 100 V bus rails. The built-in body diode supports synchronous rectification, and the low Rds(on) reduces I²R conduction losses by up to 30% compared to devices with 10 mΩ on-resistance at similar current levels.
How does the 763 mJ avalanche energy rating of AUIRFP4568 protect motor drive circuits?
Avalanche energy of 763 mJ means the AUIRFP4568 can absorb single-pulse inductive energy spikes without breakdown when the drain voltage momentarily exceeds 150 V, a common event during motor braking or load dump in 48 V drive systems. This rating allows designers to reduce external snubber component values or eliminate them entirely, simplifying the power stage PCB layout and improving reliability.
What thermal considerations apply when mounting AUIRFP4568 in a high-power application?
The AUIRFP4568 is housed in a TO-247 package with the drain connected to the exposed metal tab, allowing direct heatsink mounting through standard M3 hardware for thermal impedance below 0.5 °C/W with an adequate heatsink. At 171 A and 5.9 mΩ, worst-case conduction power dissipation reaches approximately 173 W, so junction-to-case thermal resistance Rth(j-c) must be managed carefully to keep Tj below the 175 °C maximum rating.
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