AUIRF7343Q International Rectifier Integrated Circuit (Other) In Stock
International Rectifier AUIRF7343Q is a dual automotive-grade P-channel MOSFET rated at 55 V and 4.7 A per channel with a maximum Rds(on) of 50 mΩ in an 8-pin SOIC package. Ultra-low resistance and avalanche-rated for reliable automotive switching. Available from authorized distributors with worldwide shipping.
- Manufacturer
- International Rectifier
- Package
- Other
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- AUIRF7343Q Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual P-channel MOSFET configuration in a single 8-pin SOIC package saves board space in automotive designs
- 55 V drain-source breakdown voltage with 4.7 A per channel covers 12 V and 24 V automotive power switching
- Ultra-low 50 mΩ Rds(on) minimizes conduction losses in high-side load switching circuits
- 72 mJ avalanche energy (Eas) rating provides protection against inductive transients in automotive environments
- Automotive-qualified with AEC-Q101-equivalent screening for high-reliability vehicle electronics applications
Applications
The AUIRF7343Q targets automotive body electronics applications including dual-channel high-side load switching for lighting, seat actuators, and window motors where independent control of 2 outputs is required from a single 8-pin SOIC package. Its 55 V rating and ultra-low 50 mΩ Rds(on) also suit 12 V battery-connected power distribution modules and reverse battery protection circuits. Industrial motion control and robotics designs benefit from the dual-channel topology for compact H-bridge and half-bridge implementations.
Specifications
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 72mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 4.7A |
| Drain-source On Resistance-Max | 0.05Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 38A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the dual-channel AUIRF7343Q simplify PCB layout compared to using two discrete P-channel MOSFETs?
Integrating 2 independent P-channel channels in a single 8-pin SOIC package reduces component count by 1 device and saves approximately 30 mm² of board area versus two separate SOT-23 or D-PAK devices with associated decoupling capacitors. Each channel handles up to 4.7 A, enabling independent control of 2 loads from one compact footprint.
Which automotive switching scenarios does the 55 V rating of AUIRF7343Q cover?
The 55 V breakdown voltage provides sufficient margin above the 42 V load dump transient specified in ISO 16750-2 for 12 V automotive systems, and remains within rating for 24 V truck battery environments under normal operating conditions. This makes AUIRF7343Q suitable for direct battery-connected load switches, reverse polarity protection, and relay replacement circuits in passenger car and light commercial vehicle applications.
When is the 72 mJ avalanche energy of AUIRF7343Q a limiting factor in inductive load switching?
At 72 mJ, the single-pulse avalanche rating is adequate for small relay coils and light inductive loads, but may be insufficient for actuating solenoids or motor windings storing more energy than 72 mJ. Designers should calculate load inductance stored energy (E = ½LI²) to verify; for a 10 mH solenoid at 4.7 A, the stored energy is 110 mJ, which exceeds the device rating and demands an external flyback diode or TVS clamp.
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About International Rectifier
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