APT5025BN Microchip MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Microchip APT5025BN is a high-voltage N-channel power MOSFET rated at 500 V and 23 A with 0.25 Ω on-resistance, housed in a TO-247 package for demanding power conversion and motor drive applications.
- Manufacturer
- Microchip
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- APT5025BN Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 500 V drain-source breakdown voltage with 23 A continuous drain current for robust high-voltage power switching
- Low 0.25 Ω on-resistance minimizes conduction losses in continuous-duty power conversion circuits
- TO-247AD through-hole package provides excellent thermal dissipation for high-power inverter and motor drive designs
Applications
The APT5025BN N-channel MOSFET is designed for high-voltage power switching applications including AC-DC converters, full-bridge inverters, and industrial motor drives operating from 400 V to 500 V DC bus rails. Its low 0.25 Ω on-resistance and 23 A current capability make it well-suited for solar inverter output stages, uninterruptible power supplies, and electric vehicle battery chargers. The TO-247 package ensures reliable heat transfer to heatsinks in continuous high-power switching environments.
Specifications
| YTEOL | 6 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 23A |
| Drain-source On Resistance-Max | 0.25Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 290pF |
| JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 310W |
| Pulsed Drain Current-Max (IDM) | 92A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 163ns |
| Turn-on Time-Max (ton) | 83ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the APT5025BN handle a 400 V DC bus in a full-bridge inverter topology?
With a 500 V drain-source breakdown rating and 23 A continuous current capability, the APT5025BN operates safely on a 400 V DC bus with a 100 V margin. Its 0.25 Ω on-resistance keeps conduction losses below 133 W at full load, making it suitable for 5 kW to 8 kW full-bridge inverter stages driving AC motors or grid-tied loads.
What thermal management approach works best for the APT5025BN in a 10 A switching circuit?
At 10 A continuous drain current, conduction losses through the 0.25 Ω on-resistance reach approximately 25 W. The TO-247AD package provides a case-to-heatsink thermal path that, combined with a standard 0.5°C/W heatsink compound and a moderate heatsink, keeps junction temperature well below the 150°C maximum, ensuring reliable operation in motor control and power supply designs.
Which power topology benefits most from the APT5025BN built-in body diode?
Topologies with freewheeling current paths, such as synchronous buck converters and H-bridge motor drivers at 500 V, benefit from the integrated body diode. The single-die configuration with built-in diode eliminates an external Schottky clamp in half-bridge stages, reducing component count and board space in designs switching at 20 kHz to 100 kHz.
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