APT5025BN Microchip MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Microchip APT5025BN is a high-voltage N-channel power MOSFET rated at 500 V and 23 A with 0.25 Ω on-resistance, housed in a TO-247 package for demanding power conversion and motor drive applications.
- Manufacturer
- Microchip
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- APT5025BN Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of APT5025BN?
- 500 V drain-source breakdown voltage with 23 A continuous drain current for robust high-voltage power switching
- Low 0.25 Ω on-resistance minimizes conduction losses in continuous-duty power conversion circuits
- TO-247AD through-hole package provides excellent thermal dissipation for high-power inverter and motor drive designs
What is APT5025BN used for?
The APT5025BN N-channel MOSFET is designed for high-voltage power switching applications including AC-DC converters, full-bridge inverters, and industrial motor drives operating from 400 V to 500 V DC bus rails. Its low 0.25 Ω on-resistance and 23 A current capability make it well-suited for solar inverter output stages, uninterruptible power supplies, and electric vehicle battery chargers. The TO-247 package ensures reliable heat transfer to heatsinks in continuous high-power switching environments.
What are the specifications of APT5025BN?
| YTEOL | 6 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 23A |
| Drain-source On Resistance-Max | 0.25Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 290pF |
| JEDEC-95 Code | TO-247AD |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 310W |
| Pulsed Drain Current-Max (IDM) | 92A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 163ns |
| Turn-on Time-Max (ton) | 83ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the APT5025BN datasheet?
APT5025BN Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for APT5025BN?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the APT5025BN handle a 400 V DC bus in a full-bridge inverter topology?
With a 500 V drain-source breakdown rating and 23 A continuous current capability, the APT5025BN operates safely on a 400 V DC bus with a 100 V margin. Its 0.25 Ω on-resistance keeps conduction losses below 133 W at full load, making it suitable for 5 kW to 8 kW full-bridge inverter stages driving AC motors or grid-tied loads.
What thermal management approach works best for the APT5025BN in a 10 A switching circuit?
At 10 A continuous drain current, conduction losses through the 0.25 Ω on-resistance reach approximately 25 W. The TO-247AD package provides a case-to-heatsink thermal path that, combined with a standard 0.5°C/W heatsink compound and a moderate heatsink, keeps junction temperature well below the 150°C maximum, ensuring reliable operation in motor control and power supply designs.
Which power topology benefits most from the APT5025BN built-in body diode?
Topologies with freewheeling current paths, such as synchronous buck converters and H-bridge motor drivers at 500 V, benefit from the integrated body diode. The single-die configuration with built-in diode eliminates an external Schottky clamp in half-bridge stages, reducing component count and board space in designs switching at 20 kHz to 100 kHz.
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