ADP3629ARMZ-R7 Analog Devices Integrated Circuit (Small Outline Packages) In Stock
ADP3629ARMZ-R7 is a high-speed dual 2A MOSFET gate driver from Analog Devices in an 8-pin MSOP package. It features differential Schmitt trigger inputs, 9.5V to 18V supply range, and -40°C to 150°C junction temperature range. Available from stock worldwide with fast shipping.
- Manufacturer
- Analog Devices
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- ADP3629ARMZ-R7 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $1.3700(MOQ 1)
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual 2A sink and source peak current capability enabling fast MOSFET switching transitions in high-frequency power stages
- Differential Schmitt trigger inputs providing superior noise immunity in noisy switching power supply environments
- Extended junction temperature range of -40°C to 150°C supporting harsh industrial and automotive gate drive applications
Applications
ADP3629ARMZ-R7 drives the gate of power MOSFETs in high-frequency DC-DC converters, half-bridge, and full-bridge topology power supplies operating up to 18V supply. Its 2A output current enables very fast MOSFET turn-on and turn-off with sub-10ns propagation delay, reducing switching losses in motor control inverters and class-D audio amplifiers. The differential input with Schmitt trigger hysteresis makes it robust against ground bounce and common-mode noise in high-current switching circuits.
Specifications
| Source Url Status Check Date | 2013-05-01 14:56:46.858 |
| Pbfree Code | No |
| Manufacturer Package Code | RM-8 |
| YTEOL | 10 |
| High Side Driver | YES |
| Input Characteristics | DIFFERENTIAL SCHMITT TRIGGER |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 Code | S-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Functions | 2 |
| Output Characteristics | OPEN-DRAIN |
| Output Peak Current Limit-Nom | 2A |
| Output Polarity | TRUE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | TSSOP8,.19 |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Current-Max | 3mA |
| Supply Voltage-Max | 18V |
| Supply Voltage-Min | 9.5V |
| Supply Voltage-Nom | 12V |
| Supply Voltage1-Max | 18V |
| Supply Voltage1-Min | 9.5V |
| Supply Voltage1-Nom | 12V |
| Surface Mount | YES |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.65mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Turn-off Time | 35 µs |
| Turn-on Time | 30 µs |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.01 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the peak output current of ADP3629ARMZ-R7 and how does this relate to MOSFET gate charge time?
The ADP3629ARMZ-R7 delivers 2A peak source and sink current per channel. For a MOSFET with 20 nC gate charge, this 2A drive capability achieves a gate transition time of approximately 10 ns, enabling operation in switching converters at frequencies up to 1 MHz with minimal switching losses.
Can ADP3629ARMZ-R7 be used in half-bridge configurations with both high-side and low-side MOSFET driving?
Yes, ADP3629ARMZ-R7 includes a high-side driver function among its 2 channels. The 9.5V to 18V supply range and differential Schmitt trigger inputs make both channels suitable for half-bridge gate drive, though a bootstrap capacitor circuit or separate floating supply is required for the high-side channel above the switch node.
How does the MSOP-8 package affect thermal performance when ADP3629ARMZ-R7 drives high-capacitance MOSFETs at 500 kHz?
Driving a MOSFET gate capacitance of 5 nF at 500 kHz dissipates approximately 112 mW per channel in the ADP3629ARMZ-R7 from charging and discharging the gate. The MSOP-8 package has a thermal resistance of about 200°C/W, so dual-channel operation can raise junction temperature by 45°C above ambient, remaining within the 150°C limit at 105°C ambient.
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About Analog Devices
Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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