74HCT1G86GWAlternatives & Equivalent Parts

About 74HCT1G86GW

74HCT1G86GW is a Integrated Circuit component manufactured by Nexperia. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

Parameter74HCT1G86GWSourceSIR662DP-T1-GE3SN65HVD10DSI7461DP-T1-GE3
ManufacturerNexperiaVishayTexas InstrumentsVishay
Package TypeOtherOther—Other
Pin Count58—8
Temperature Range-40.0°C ~ 125.0°C~ 150.0°C—~ 150.0°C
Price$0.0525$0.8400$0.6977$1.0750
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVENOT RECOMMENDED—ACTIVE
Electrical Parameters
Date Of Intro1998-08-05———
YTEOL103—5
FamilyHCT———
JESD-30 CodeR-PDSO-G5R-XDSO-C5—R-XDSO-C5
JESD-609 Codee3e3—e3
Load Capacitance (CL)50 pF———
Logic IC TypeXOR GATE———
Max I(ol)0.026 A———
Number of Functions1———
Number of Inputs2———
Package Body MaterialPLASTIC/EPOXYUNSPECIFIED—UNSPECIFIED
Package Equivalence CodeTSSOP5,.08———
Package ShapeRECTANGULARRECTANGULAR—RECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCHSMALL OUTLINE—SMALL OUTLINE
Peak Reflow Temperature (Cel)260260—260
Power Supply Current-Max (ICC)0.02 mA———
Propagation Delay (tpd)27 ns———
Schmitt TriggerNO———
Supply Voltage-Max (Vsup)5.5 V———
Supply Voltage-Min (Vsup)4.5 V———
Supply Voltage-Nom (Vsup)5 V———
Surface MountYESYES—YES
TechnologyCMOS———
Temperature GradeAUTOMOTIVE———
Terminal FinishTINMatte Tin (Sn)—Pure Matte Tin (Sn) - annealed
Terminal FormGULL WINGC BEND—C BEND
Terminal Pitch0.65 mm———
Terminal PositionDUALDUAL—DUAL
Time@Peak Reflow Temperature-Max (s)3030—30
Factory Lead Time—29 Weeks——
Avalanche Energy Rating (Eas)—80 mJ—125 mJ
Case Connection—DRAIN—DRAIN
Configuration—SINGLE WITH BUILT-IN DIODE—SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min—60 V—60 V
Drain Current-Max (ID)—60 A—8.6 A
Drain-source On Resistance-Max—0.0048 Ω—0.0145 Ω
FET Technology—METAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTOR
Number of Elements—1—1
Operating Mode—ENHANCEMENT MODE—ENHANCEMENT MODE
Polarity/Channel Type—N-CHANNEL—P-CHANNEL
Power Dissipation-Max (Abs)—104 W—5.4 W
Pulsed Drain Current-Max (IDM)—100 A—60 A
Qualification Status—Not Qualified—Not Qualified
Transistor Application—SWITCHING——
Transistor Element Material—SILICON—SILICON

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Why Look for Alternatives?

Finding alternatives for 74HCT1G86GW is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating 74HCT1G86GW replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to 74HCT1G86GW?

Known equivalents for 74HCT1G86GW include SIR662DP-T1-GE3, SN65HVD10D, SI7461DP-T1-GE3. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of 74HCT1G86GW?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify 74HCT1G86GW alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.