74HCT1G86GWAlternatives & Equivalent Parts

About 74HCT1G86GW

74HCT1G86GW is a Integrated Circuit component manufactured by Nexperia. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

Parameter74HCT1G86GWSourceSIR662DP-T1-GE3SN65HVD10DSI7461DP-T1-GE3
ManufacturerNexperiaVishayTexas InstrumentsVishay
Package TypeOtherOtherOther
Pin Count588
Temperature Range-40.0°C ~ 125.0°C~ 150.0°C~ 150.0°C
Price$0.0525$0.8400$0.6977$1.0750
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVENOT RECOMMENDEDACTIVE
Electrical Parameters
Date Of Intro1998-08-05
YTEOL1035
FamilyHCT
JESD-30 CodeR-PDSO-G5R-XDSO-C5R-XDSO-C5
JESD-609 Codee3e3e3
Load Capacitance (CL)50 pF
Logic IC TypeXOR GATE
Max I(ol)0.026 A
Number of Functions1
Number of Inputs2
Package Body MaterialPLASTIC/EPOXYUNSPECIFIEDUNSPECIFIED
Package Equivalence CodeTSSOP5,.08
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCHSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260260
Power Supply Current-Max (ICC)0.02 mA
Propagation Delay (tpd)27 ns
Schmitt TriggerNO
Supply Voltage-Max (Vsup)5.5 V
Supply Voltage-Min (Vsup)4.5 V
Supply Voltage-Nom (Vsup)5 V
Surface MountYESYESYES
TechnologyCMOS
Temperature GradeAUTOMOTIVE
Terminal FinishTINMatte Tin (Sn)Pure Matte Tin (Sn) - annealed
Terminal FormGULL WINGC BENDC BEND
Terminal Pitch0.65 mm
Terminal PositionDUALDUALDUAL
Time@Peak Reflow Temperature-Max (s)303030
Factory Lead Time29 Weeks
Avalanche Energy Rating (Eas)80 mJ125 mJ
Case ConnectionDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V60 V
Drain Current-Max (ID)60 A8.6 A
Drain-source On Resistance-Max0.0048 Ω0.0145 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Number of Elements11
Operating ModeENHANCEMENT MODEENHANCEMENT MODE
Polarity/Channel TypeN-CHANNELP-CHANNEL
Power Dissipation-Max (Abs)104 W5.4 W
Pulsed Drain Current-Max (IDM)100 A60 A
Qualification StatusNot QualifiedNot Qualified
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICONSILICON

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Why Look for Alternatives?

Finding alternatives for 74HCT1G86GW is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating 74HCT1G86GW replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to 74HCT1G86GW?

Known equivalents for 74HCT1G86GW include SIR662DP-T1-GE3, SN65HVD10D, SI7461DP-T1-GE3. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of 74HCT1G86GW?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify 74HCT1G86GW alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.