48L640T-I/SN Microchip Integrated Circuit (Small Outline Packages) In Stock
48L640T-I/SN is a Microchip 64Kbit (8K × 8) standard SRAM with a 66MHz maximum clock frequency in an 8-pin SOIC package, providing fast read/write access for embedded buffering and look-up table applications.
- Manufacturer
- Microchip
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- 48L640T-I/SN Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 64Kbit (65536-bit) density organized as 8K × 8-bit words for byte-wide data access
- 66MHz maximum clock frequency enabling fast random-access read and write cycles in high-speed designs
- Standard SRAM architecture with common I/O for simple interface to any microcontroller or FPGA
- Compact 8-pin SOIC-8 package minimizing board area in memory-expansion applications
- RoHS-compliant JESD-609 e3 lead-free construction for use in regulated end products
Applications
The 48L640T-I/SN is used as an external data buffer or scratchpad memory in embedded systems where the on-chip SRAM of a microcontroller is insufficient for buffering sensor data streams, display frame buffers, or protocol packet queues. Its 66MHz clock rate and 8-bit-wide data bus allow it to keep up with SPI or parallel-bus transfers from most 8-bit and 16-bit microcontrollers, making it a straightforward memory expansion option. The compact SOIC-8 footprint also suits space-limited IoT nodes and data-logging devices that require a few kilobytes of fast non-volatile-replaceable working storage.
Specifications
| Manufacturer Package Code | SOIC-8 |
| Date Of Intro | 2019-10-28 |
| YTEOL | 0 |
| Clock Frequency-Max (fCLK) | 66MHz |
| I/O Type | COMMON |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Memory Density | 65536bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 8192words |
| Number of Words Code | 8000 |
| Operating Mode | SYNCHRONOUS |
| Organization | 8KX8 |
| Output Characteristics | 3-STATE |
| Output Enable | NO |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOP8,.23 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Parallel/Serial | SERIAL |
| Standby Current-Max | 0.0002A |
| Standby Voltage-Min | 2.7V |
| Supply Current-Max | 0.005mA |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| ## 48L640T-I/SN Alternates Showing results | Image |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.51 |
| Country of Origin | Thailand |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for 48L640T-I/SN:
suggested
suggested
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suggested
Frequently Asked Questions
What storage capacity and data organization does the 48L640T-I/SN provide for embedded systems?
The 48L640T-I/SN stores 65,536 bits organized as 8,192 locations each 8 bits wide, giving 8KB of addressable byte memory. This capacity is sufficient to buffer up to 8,000 single-byte sensor readings, store a small font table for an LCD controller, or hold a 64×128-pixel 1-bit display framebuffer in a compact SOIC-8 package.
How fast can the 48L640T-I/SN be accessed, and what bus interface does it support?
The device supports clock frequencies up to 66MHz on its common I/O bus, translating to a memory cycle time well under 20ns. This speed is compatible with the SPI or parallel bus interfaces of most 8-bit and 32-bit microcontrollers running at up to 48MHz, allowing back-to-back read or write cycles without wait states in typical embedded memory expansion configurations.
How does an external SRAM like the 48L640T-I/SN compare to using Flash memory for temporary data buffering?
SRAM supports unlimited read and write cycles at full bus speed without the erase-before-write overhead that Flash requires, making the 48L640T-I/SN far more suitable for high-frequency temporary storage such as ring buffers, DMA targets, or real-time data queues. Flash memory typically endures only 10,000 to 100,000 write cycles per sector, while the 48L640T-I/SN SRAM has no write-endurance limit, though it does not retain data when power is removed.
For a new design starting in 2024, should engineers consider the 48L640T-I/SN given its YTEOL status, and what alternatives exist?
The 48L640T-I/SN has a YTEOL value of 0, indicating it may be near or at end-of-life, so engineers should check current availability and lifecycle status before designing it into a new product. Viable alternatives include Microchip's 23LC512 (512Kbit SPI SRAM in SOIC-8) or 23K256 (256Kbit), which offer larger capacities in the same 8-pin footprint and are actively produced, reducing long-term supply risk for new designs.
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