47L64T-I/MNY Microchip Integrated Circuit (Small Outline No-lead) In Stock
The 47L64T-I/MNY is a 64Kbit (8K × 8-bit) combined EEPROM and SRAM memory IC from Microchip featuring a maximum 550ns access time for fast read operations. It integrates non-volatile EEPROM storage with fast SRAM access in a compact 8-lead TDFN no-lead package. Available worldwide with fast shipping.
- Manufacturer
- Microchip
- Package
- Small Outline No-lead
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- 47L64T-I/MNY Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of 47L64T-I/MNY?
- 64Kbit (65,536-bit) mixed EEPROM+SRAM architecture combines non-volatile storage with fast volatile access in one device
- 550ns maximum access time supports fast embedded data logging and parameter storage without wait states
- Compact 8-lead TDFN (2mm × 3mm) no-lead package saves PCB area in space-constrained designs
- 8-bit wide single-port interface simplifies connection to standard microcontroller memory buses
What is 47L64T-I/MNY used for?
The 47L64T-I/MNY is suitable for embedded systems that need both fast temporary data buffering (SRAM) and persistent non-volatile parameter storage (EEPROM) without using two separate memory devices. It is commonly used in IoT sensors, wearable devices, and industrial microcontroller boards where board space is limited and power-loss data retention is essential. The no-lead TDFN package enables low-profile assemblies for compact consumer electronics and medical monitoring equipment.
What are the specifications of 47L64T-I/MNY?
| Manufacturer Package Code | TDFN-8 |
| YTEOL | 0 |
| Access Time-Max | 550ns |
| JESD-30 Code | R-PDSO-N8 |
| Memory Density | 65536bit |
| Memory IC Type | MEMORY CIRCUIT |
| Memory Width | 8 |
| Mixed Memory Type | EEPROM+SRAM |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 8192words |
| Number of Words Code | 8000 |
| Operating Mode | SYNCHRONOUS |
| Organization | 8KX8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOLCC8,.11,20 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3.3V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Package | Small Outline No-lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.51 |
Where can I find the 47L64T-I/MNY datasheet?
47L64T-I/MNY Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for 47L64T-I/MNY?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How much total memory does the 47L64T-I/MNY provide and how is it organized?
The 47L64T-I/MNY provides 64Kbits (65,536 bits) of total memory density organized as 8,192 bytes (8K × 8 bits) in an 8-bit wide single-port architecture. This capacity is sufficient to store hundreds of calibration parameters, configuration records, or event log entries in the EEPROM portion, while the SRAM section handles faster temporary data buffering during active processing.
For a data-logging embedded system, how fast can the 47L64T-I/MNY deliver data and is it fast enough for real-time use?
The 47L64T-I/MNY has a maximum access time of 550ns, which is fast enough for real-time embedded systems running at frequencies up to several megahertz without introducing wait states. For a microcontroller operating at 4MHz (250ns clock period), two clock cycles comfortably cover the 550ns read latency, making the device suitable for direct memory-mapped access in simple 8-bit or 16-bit embedded data-logging architectures.
What advantage does combining EEPROM and SRAM in a single 47L64T-I/MNY device provide over using two separate chips?
Using the 47L64T-I/MNY eliminates the need for a separate 64Kbit EEPROM plus an additional SRAM chip, saving at least 8 PCB pins, one package footprint (roughly 5mm² to 9mm² depending on the alternative package), and one set of decoupling capacitors. This integration also reduces BOM line count and simplifies PCB routing, which is particularly valuable in space-constrained IoT nodes and wearable designs with tight area and cost budgets.
How does the TDFN-8 package of the 47L64T-I/MNY compare to a standard SOIC-8 in terms of footprint?
The 8-lead TDFN package used by the 47L64T-I/MNY measures approximately 2mm × 3mm with no leads extending beyond the package body, compared to a standard SOIC-8 footprint of roughly 5mm × 4mm plus lead extensions. This reduction of nearly 70% in package area allows denser PCB layouts in portable and wearable applications where every square millimeter of board space matters.
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