445I23D24M00000Alternatives & Equivalent Parts
About 445I23D24M00000
445I23D24M00000 is a Crystal or Oscillator component manufactured by CTS. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | 445I23D24M00000Source | 445C25D24M00000 | CDRH4D28NP-4R7NC | CDRH74NP-220MC-B | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Manufacturer | CTS | CTS | Sumida | Sumida | Infineon |
| Package Type | Other | Other | Inductor Moulded | Other | Other |
| Pin Count | 2 | 2 | 2 | 2 | 8 |
| Temperature Range | -40.0°C ~ 85.0°C | -20.0°C ~ 70.0°C | -40.0°C ~ 100.0°C | -40.0°C ~ 100.0°C | -55.0°C ~ 150.0°C |
| Price | $0.2970 | $0.1791 | $0.3263 | $0.3160 | $0.4352 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Pbfree Code | Yes | Yes | Yes | — | No |
| Factory Lead Time | 8 Weeks | 8 Weeks | 34 Weeks, 2 Days | 42 Weeks, 6 Days | 16 Weeks |
| YTEOL | 6.8 | 6.8 | 7.4 | 7 | 5.85 |
| Additional Feature | AT CUT; TR, 7 INCH | AT CUT; TR, 7 INCH | — | — | — |
| Aging | 3 PPM/YEAR | 3 PPM/YEAR | — | — | — |
| Crystal/Resonator Type | PARALLEL - FUNDAMENTAL | PARALLEL - FUNDAMENTAL | — | — | — |
| Drive Level | 10 µW | 10 µW | — | — | — |
| Frequency Stability | 0.003% | 0.005% | — | — | — |
| Frequency Tolerance | 20 ppm | 20 ppm | — | — | — |
| JESD-609 Code | e4 | e4 | — | — | e3 |
| Load Capacitance | 18 pF | 18 pF | — | — | — |
| Mounting Feature | SURFACE MOUNT | SURFACE MOUNT | — | — | — |
| Operating Frequency-Nom | 24 MHz | 24 MHz | — | — | — |
| Physical Dimension | L5.0XB3.2XH1.35 (mm)/L0.197XB0.126XH0.053 (inch) | L5.0XB3.2XH1.35 (mm)/L0.197XB0.126XH0.053 (inch) | — | — | — |
| Series Resistance | 40 Ω | 40 Ω | — | — | — |
| Surface Mount | YES | YES | YES | YES | YES |
| Terminal Finish | GOLD OVER NICKEL | GOLD OVER NICKEL | — | — | Tin (Sn) |
| Case/Size Code | — | — | 1919 | 2929 | — |
| Construction | — | — | Rectangular | Rectangular | — |
| Core Material | — | — | FERRITE | FERRITE | — |
| DC Resistance | — | — | 0.072 Ω | 0.11 Ω | — |
| Inductance-Nom (L) | — | — | 4.7 µH | 22 µH | — |
| Inductor Application | — | — | POWER INDUCTOR | POWER INDUCTOR | — |
| Inductor Type | — | — | GENERAL PURPOSE INDUCTOR | GENERAL PURPOSE INDUCTOR | — |
| Number of Functions | — | — | 1 | 1 | — |
| Package Height | — | — | 3 mm | 4.5 mm | — |
| Package Length | — | — | 4.7 mm | 7.3 mm | — |
| Package Style | — | — | SMT | SMT | SMALL OUTLINE |
| Package Width | — | — | 4.7 mm | 7.3 mm | — |
| Packing Method | — | — | TR, 13 Inch | TR, 13 Inch | — |
| Rated Current-Max | — | — | 2.12 A | 1.23 A | — |
| Shape/Size Description | — | — | RECTANGULAR PACKAGE | RECTANGULAR PACKAGE | — |
| Shielded | — | — | YES | YES | — |
| Terminal Placement | — | — | DUAL ENDED | DUAL ENDED | — |
| Terminal Shape | — | — | WRAPAROUND | WRAPAROUND | — |
| Test Frequency | — | — | 0.1 MHz | 0.001 MHz | — |
| Tolerance | — | — | 30% | 20% | — |
| Avalanche Energy Rating (Eas) | — | — | — | — | 70 mJ |
| Case Connection | — | — | — | — | DRAIN |
| Configuration | — | — | — | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | — | — | — | — | 80 V |
| Drain Current-Max (ID) | — | — | — | — | 55 A |
| Drain-source On Resistance-Max | — | — | — | — | 0.0123 Ω |
| FET Technology | — | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | — | — | — | — | R-PDSO-N8 |
| Number of Elements | — | — | — | — | 1 |
| Operating Mode | — | — | — | — | ENHANCEMENT MODE |
| Package Body Material | — | — | — | — | PLASTIC/EPOXY |
| Package Shape | — | — | — | — | RECTANGULAR |
| Polarity/Channel Type | — | — | — | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | — | — | — | — | 66 W |
| Pulsed Drain Current-Max (IDM) | — | — | — | — | 220 A |
| Qualification Status | — | — | — | — | Not Qualified |
| Terminal Form | — | — | — | — | NO LEAD |
| Terminal Position | — | — | — | — | DUAL |
| Transistor Application | — | — | — | — | SWITCHING |
| Transistor Element Material | — | — | — | — | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for 445I23D24M00000 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for 445I23D24M00000 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating 445I23D24M00000 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to 445I23D24M00000?
Known equivalents for 445I23D24M00000 include 445C25D24M00000, CDRH4D28NP-4R7NC, CDRH74NP-220MC-B. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of 445I23D24M00000?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify 445I23D24M00000 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.