4116R-1-333LFAlternatives & Equivalent Parts

About 4116R-1-333LF

4116R-1-333LF is a Resistor Network component manufactured by Bourns. It comes in a Dual-In-Line Packages package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

Parameter4116R-1-333LFSourceLF347NM24C64-RMN6TPBQ2002DSNTRG42N5551
ManufacturerBournsTexas InstrumentsSTMicroelectronicsTexas InstrumentsON Semiconductor
Package TypeDual-In-Line PackagesDual-In-Line PackagesSmall Outline PackagesSmall Outline PackagesOther
Pin Count1614883
Temperature Range-55.0°C ~ 125.0°C~ 70.0°C-40.0°C ~ 85.0°C~ 70.0°C~ 150.0°C
Price$0.7840$0.1964$0.1810$1.1053$0.0085
StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEOBSOLETEOBSOLETE
Electrical Parameters
Pbfree CodeYesYes——No
Reach Compliance CodeNot Compliant————
Factory Lead Time7 Weeks—6 Weeks—6 Weeks
YTEOL7.1515906.5
ConstructionMolded————
Element Power Dissipation0.25 W————
First Element Resistance33000 Ω————
JESD-609 Codee3e4e4e4e0
Lead Length3.43 mm————
Lead Spacing2.54 mm————
Mounting FeatureTHROUGH HOLE MOUNT————
Network TypeISOLATED————
Number of Elements1———1
Number of Functions8411—
Package Height4.57 mm————
Package Length21.97 mm————
Package ShapeRECTANGULAR PACKAGERECTANGULARRECTANGULARRECTANGULARROUND
Package StyleDIPIN-LINESMALL OUTLINESMALL OUTLINECYLINDRICAL
Package Width7.87 mm————
Rated Power Dissipation (P)2.25 W————
Rated Temperature70 °C————
Resistance33000 Ω————
Resistor TypeARRAY/NETWORK RESISTOR————
Size Code8631————
Surface MountNONOYESYESNO
TechnologyMETAL GLAZE/THICK FILMJFETCMOSCMOS—
Temperature Coefficient100 ppm/°C————
Temperature Coefficient Tracking50 ppm/°C————
Terminal FinishMATTE TINNickel/Palladium/Gold (Ni/Pd/Au)Nickel/Palladium/Gold (Ni/Pd/Au)Nickel/Palladium/Gold (Ni/Pd/Au)Tin/Lead (Sn/Pb)
Terminal ShapeFLAT————
Tolerance2%————
Working Voltage100 V————
Amplifier Type—OPERATIONAL AMPLIFIER———
Architecture—VOLTAGE-FEEDBACK———
Average Bias Current-Max (IIB)—0.0002 µA———
Bias Current-Max (IIB) @25C—0.0002 µA———
Common-mode Reject Ratio-Min—70 dB———
Common-mode Reject Ratio-Nom—100 dB———
Frequency Compensation—YES———
Input Offset Current-Max (IIO)—0.004 µA———
Input Offset Voltage-Max—10000 µV———
JESD-30 Code—R-PDIP-T14R-PDSO-G8R-PDSO-G8O-PBCY-T3
Low-Bias—YES———
Low-Offset—NO———
Micropower—NO———
Neg Supply Voltage Limit-Max—-18 V———
Neg Supply Voltage-Nom (Vsup)—-15 V———
Package Body Material—PLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package Equivalence Code—DIP14,.3SOP8,.25SOP8,.25—
Packing Method—TUBE———
Power—NO———
Programmable Power—NO———
Qualification Status—Not QualifiedNot QualifiedNot QualifiedNot Qualified
Slew Rate-Min—8 V/us———
Slew Rate-Nom—13 V/us———
Subcategory—Operational Amplifier———
Supply Current-Max—11 mA0.0025 mA——
Supply Voltage Limit-Max—18 V———
Supply Voltage-Nom (Vsup)—15 V2.5 V5 V—
Temperature Grade—COMMERCIALINDUSTRIALCOMMERCIAL—
Terminal Form—THROUGH-HOLEGULL WINGGULL WINGTHROUGH-HOLE
Terminal Pitch—2.54 mm1.27 mm1.27 mm—
Terminal Position—DUALDUALDUALBOTTOM
Unity Gain BW-Nom—3000———
Voltage Gain-Min—15000———
Wideband—NO———
## LF347N Alternates Showing results—Image———
Endurance——1000000 Write/Erase Cycles——
Memory Density——65536 bit——
Memory IC Type——EEPROM——
Memory Width——8——
Number of Words——8192 words——
Number of Words Code——8000——
Operating Mode——SYNCHRONOUS——
Organization——8KX8——
Parallel/Serial——SERIAL——
Peak Reflow Temperature (Cel)——260260—
Standby Current-Max——0.000001 A——
Supply Voltage-Max (Vsup)——5.5 V6 V—
Supply Voltage-Min (Vsup)——1.8 V4 V—
Time@Peak Reflow Temperature-Max (s)——NOT SPECIFIED30—
Write Protection——HARDWARE——
## M24C64-RMN6TP Alternates Showing results——Image——
Adjustable Threshold———NO—
Analog IC - Other Type———BATTERY MONITOR—
Number of Channels———1—
Supply Current-Max (Isup)———0.5 mA—
## BQ2002DSNTRG4 Alternates Showing results———Image—
Collector Current-Max (IC)————0.6 A
Collector-Emitter Voltage-Max————160 V
Configuration————SINGLE
DC Current Gain-Min (hFE)————80
JEDEC-95 Code————TO-92
Polarity/Channel Type————NPN
Power Dissipation-Max (Abs)————0.35 W
Transistor Application————AMPLIFIER
Transistor Element Material————SILICON
Transition Frequency-Nom (fT)————100 MHz

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 4 alternatives for 4116R-1-333LF — response within 24 hours.

Quick Links

LF347N

suggested

2N5551

suggested

Why Look for Alternatives?

Finding alternatives for 4116R-1-333LF is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating 4116R-1-333LF replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to 4116R-1-333LF?

Known equivalents for 4116R-1-333LF include LF347N, M24C64-RMN6TP, BQ2002DSNTRG4. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of 4116R-1-333LF?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify 4116R-1-333LF alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.