2STN2360 STMicroelectronics Integrated Circuit (SOT223 (3-Pin)) In Stock
2STN2360 is a single PNP bipolar power transistor rated at 3 A collector current and 60 V collector-emitter voltage in a 4-pin SOT-223 package. Offers hFE minimum of 80 and 130 MHz transition frequency for medium-power switching. From $0.35 in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- SOT223 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- 2STN2360 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- PNP power transistor with 3 A collector current and 60 V collector-emitter breakdown in a thermally enhanced 4-pin SOT-223 package
- Minimum DC current gain (hFE) of 80 with 130 MHz transition frequency enabling fast medium-power switching
- SOT-223 collector tab thermally bonded to PCB copper pour for improved thermal dissipation in compact designs
Applications
2STN2360 is suited for medium-power load switching, LED driver circuits, and motor pre-drive stages where a high-side PNP switch is needed up to 60 V. Its SOT-223 package with exposed collector tab allows efficient heat sinking directly to the PCB, supporting continuous dissipation of several watts in battery-management and DC-DC converter applications.
Specifications
| Pbfree Code | Yes |
| YTEOL | 0 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 3A |
| Collector-Emitter Voltage-Max | 60V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 80 |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 1.6W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 130MHz |
| Package | SOT223 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What load current and voltage can 2STN2360 continuously switch in a high-side PNP configuration?
2STN2360 supports a maximum collector current of 3 A and a collector-emitter voltage of 60 V, so it can continuously switch loads up to 180 W peak (derated by junction temperature). In practical high-side switch designs operating from a 24 V bus at 2 A, the device remains within safe operating area with junction temperatures below 150°C when mounted on a 2 cm² copper pour.
How does the 130 MHz transition frequency of 2STN2360 help in switching converter applications?
A transition frequency (fT) of 130 MHz means 2STN2360 retains useful current gain up to the high-frequency range, enabling switching rise and fall times well below 100 ns at 1 A collector current. This is sufficient for PWM drives at frequencies up to 500 kHz in DC-DC pre-switch stages, reducing inductor size and improving efficiency compared to slower BJTs with fT below 50 MHz.
Why does the SOT-223 package benefit thermal management for 2STN2360 in a compact PCB layout?
The SOT-223 package features a large collector tab (approximately 6.5 mm × 3.5 mm) bonded directly to the die, which can be soldered to a copper pour on the PCB. This arrangement achieves a junction-to-board thermal resistance of around 20°C/W, allowing 2STN2360 to dissipate over 1 W continuously at 25°C ambient without an external heatsink, far better than a standard SOT-23 package at over 200°C/W.
When should a designer choose 2STN2360 over an N-channel MOSFET for a 24 V power switch?
2STN2360 is preferable when a simple high-side PNP switch is needed without a charge pump, as PNP bipolar transistors turn on with base current pulled below the emitter—no gate drive voltage above the supply is required. For loads up to 3 A at 60 V where base drive current under 40 mA is available from a logic circuit, 2STN2360 reduces BOM complexity compared to adding a bootstrap gate-driver IC for a P-channel MOSFET solution.
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