2STN2360 STMicroelectronics Integrated Circuit (SOT223 (3-Pin)) In Stock
2STN2360 is a single PNP bipolar power transistor rated at 3 A collector current and 60 V collector-emitter voltage in a 4-pin SOT-223 package. Offers hFE minimum of 80 and 130 MHz transition frequency for medium-power switching. From $0.35 in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- SOT223 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- 2STN2360 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of 2STN2360?
- PNP power transistor with 3 A collector current and 60 V collector-emitter breakdown in a thermally enhanced 4-pin SOT-223 package
- Minimum DC current gain (hFE) of 80 with 130 MHz transition frequency enabling fast medium-power switching
- SOT-223 collector tab thermally bonded to PCB copper pour for improved thermal dissipation in compact designs
What is 2STN2360 used for?
2STN2360 is suited for medium-power load switching, LED driver circuits, and motor pre-drive stages where a high-side PNP switch is needed up to 60 V. Its SOT-223 package with exposed collector tab allows efficient heat sinking directly to the PCB, supporting continuous dissipation of several watts in battery-management and DC-DC converter applications.
What are the specifications of 2STN2360?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 3A |
| Collector-Emitter Voltage-Max | 60V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 80 |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 1.6W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 130MHz |
| Package | SOT223 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the 2STN2360 datasheet?
2STN2360 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for 2STN2360?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What load current and voltage can 2STN2360 continuously switch in a high-side PNP configuration?
2STN2360 supports a maximum collector current of 3 A and a collector-emitter voltage of 60 V, so it can continuously switch loads up to 180 W peak (derated by junction temperature). In practical high-side switch designs operating from a 24 V bus at 2 A, the device remains within safe operating area with junction temperatures below 150°C when mounted on a 2 cm² copper pour.
How does the 130 MHz transition frequency of 2STN2360 help in switching converter applications?
A transition frequency (fT) of 130 MHz means 2STN2360 retains useful current gain up to the high-frequency range, enabling switching rise and fall times well below 100 ns at 1 A collector current. This is sufficient for PWM drives at frequencies up to 500 kHz in DC-DC pre-switch stages, reducing inductor size and improving efficiency compared to slower BJTs with fT below 50 MHz.
Why does the SOT-223 package benefit thermal management for 2STN2360 in a compact PCB layout?
The SOT-223 package features a large collector tab (approximately 6.5 mm × 3.5 mm) bonded directly to the die, which can be soldered to a copper pour on the PCB. This arrangement achieves a junction-to-board thermal resistance of around 20°C/W, allowing 2STN2360 to dissipate over 1 W continuously at 25°C ambient without an external heatsink, far better than a standard SOT-23 package at over 200°C/W.
When should a designer choose 2STN2360 over an N-channel MOSFET for a 24 V power switch?
2STN2360 is preferable when a simple high-side PNP switch is needed without a charge pump, as PNP bipolar transistors turn on with base current pulled below the emitter—no gate drive voltage above the supply is required. For loads up to 3 A at 60 V where base drive current under 40 mA is available from a logic circuit, 2STN2360 reduces BOM complexity compared to adding a bootstrap gate-driver IC for a P-channel MOSFET solution.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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