2SJ305TE85LF Toshiba MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock
Toshiba 2SJ305TE85LF is a P-channel MOSFET in a compact SOT-23 3-pin package featuring a low threshold voltage range of -0.5 V to -1.5 V and on-resistance of 2.4 Ω. Rated for 200 mW power dissipation, it enables efficient low-voltage switching and load control in battery-powered and portable consumer devices. Widely available from global distributors with competitive unit pricing and same-day shipping on in-stock inventory.
- Manufacturer
- Toshiba
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2SJ305TE85LF Datasheet PDF
- Category
- MOSFET (P-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET with low gate threshold voltage -0.5 V to -1.5 V enabling direct drive from 1.8 V and 3.3 V logic without level shifters
- Low on-resistance of 2.4 Ω in SOT-23 package minimizes conduction losses in portable battery-powered switching circuits
- 200 mW maximum power dissipation rating balances compact form factor with adequate thermal headroom for low-current load switching
- SOT-23 3-pin package occupies minimal PCB area (2.9 mm x 1.6 mm) for space-constrained wearable and mobile designs
Applications
The 2SJ305TE85LF is designed for load switching, reverse polarity protection, and power management in smartphones, wearable devices, and portable consumer electronics operating from 1.8 V to 3.3 V rails. Its low gate threshold voltage allows direct control from low-voltage microcontroller GPIO pins without additional level-shifting circuitry, reducing component count in battery-management and power-sequencing circuits. The compact SOT-23 package is ideal for densely populated PCBs in IoT sensors, hearing aids, and ultra-thin mobile devices.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What gate threshold voltage does the 2SJ305TE85LF require, and can it be driven directly from a 1.8 V microcontroller?
The 2SJ305TE85LF has a gate threshold voltage (Vth) between -0.5 V and -1.5 V, meaning it fully turns on at gate-to-source voltages as low as -1.5 V; a 1.8 V microcontroller GPIO pulling the gate to GND while source sits at 1.8 V provides a -1.8 V gate drive, which exceeds the -1.5 V threshold and ensures the device is fully enhanced for low-resistance switching.
For a battery-powered IoT sensor switch rated at 50 mA, what power is dissipated in the 2SJ305TE85LF channel at full load?
At 50 mA drain current with RDS(on) of 2.4 Ω, the channel power dissipation is I² x R = 0.05² x 2.4 = 6 mW, well within the 200 mW maximum rating; this leaves ample thermal margin for ambient temperatures up to 85°C, the rated storage temperature extreme for the TE85LF variant.
How does the 2SJ305TE85LF's SOT-23 package compare to larger SMT packages for PCB layout in wearable devices?
The SOT-23 package measures approximately 2.9 mm x 1.6 mm with a pitch of 1.9 mm between center pins, making it roughly 4 times smaller in board area than an SOT-89 package; for wearable PCBs constrained to under 20 mm x 20 mm, the SOT-23 footprint allows placement of multiple 2SJ305TE85LF switches in a 1 cm² area to manage 4 or more independent power rails.
When is 2SJ305TE85LF a suitable alternative to a similar P-channel MOSFET like Toshiba SSM3J35TU for a 3.3 V load switch?
The 2SJ305TE85LF suits applications where the load current is under 100 mA at 3.3 V and gate drive is limited to -1.5 V or lower; engineers needing RDS(on) below 1 Ω at higher currents above 200 mA should instead evaluate alternatives with lower on-resistance in the same SOT-23 footprint, while the 2SJ305TE85LF remains the lower-cost choice for simple single-supply switching at 200 mW power budgets.
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