2SJ305TE85LF Toshiba MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock

Name: 2SJ305TE85LF
Brand: Toshiba
SKU: 2SJ305TE85LF
Availability: InStock

Toshiba 2SJ305TE85LF is a P-channel MOSFET in a compact SOT-23 3-pin package featuring a low threshold voltage range of -0.5 V to -1.5 V and on-resistance of 2.4 Ω. Rated for 200 mW power dissipation, it enables efficient low-voltage switching and load control in battery-powered and portable consumer devices. Widely available from global distributors with competitive unit pricing and same-day shipping on in-stock inventory.

ACTIVEMOSFET (P-Channel)Verified Jun 2026

Package / Visual Reference

2SJ305TE85LFSOT23 (3-Pin)

Quick Facts

Manufacturer: Toshiba
Package: SOT23 (3-Pin)
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: 2SJ305TE85LF Datasheet PDF
Category: MOSFET (P-Channel)
Price: From $0.1574(MOQ 100)
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of 2SJ305TE85LF?

P-channel MOSFET with low gate threshold voltage -0.5 V to -1.5 V enabling direct drive from 1.8 V and 3.3 V logic without level shifters
Low on-resistance of 2.4 Ω in SOT-23 package minimizes conduction losses in portable battery-powered switching circuits
200 mW maximum power dissipation rating balances compact form factor with adequate thermal headroom for low-current load switching
SOT-23 3-pin package occupies minimal PCB area (2.9 mm x 1.6 mm) for space-constrained wearable and mobile designs

What is 2SJ305TE85LF used for?

The 2SJ305TE85LF is designed for load switching, reverse polarity protection, and power management in smartphones, wearable devices, and portable consumer electronics operating from 1.8 V to 3.3 V rails. Its low gate threshold voltage allows direct control from low-voltage microcontroller GPIO pins without additional level-shifting circuitry, reducing component count in battery-management and power-sequencing circuits. The compact SOT-23 package is ideal for densely populated PCBs in IoT sensors, hearing aids, and ultra-thin mobile devices.

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)

Where can I find the 2SJ305TE85LF datasheet?

2SJ305TE85LF Datasheet Download

Official datasheet from Toshiba

What are equivalent replacements for 2SJ305TE85LF?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What gate threshold voltage does the 2SJ305TE85LF require, and can it be driven directly from a 1.8 V microcontroller?

The 2SJ305TE85LF has a gate threshold voltage (Vth) between -0.5 V and -1.5 V, meaning it fully turns on at gate-to-source voltages as low as -1.5 V; a 1.8 V microcontroller GPIO pulling the gate to GND while source sits at 1.8 V provides a -1.8 V gate drive, which exceeds the -1.5 V threshold and ensures the device is fully enhanced for low-resistance switching.

For a battery-powered IoT sensor switch rated at 50 mA, what power is dissipated in the 2SJ305TE85LF channel at full load?

At 50 mA drain current with RDS(on) of 2.4 Ω, the channel power dissipation is I² x R = 0.05² x 2.4 = 6 mW, well within the 200 mW maximum rating; this leaves ample thermal margin for ambient temperatures up to 85°C, the rated storage temperature extreme for the TE85LF variant.

How does the 2SJ305TE85LF's SOT-23 package compare to larger SMT packages for PCB layout in wearable devices?

The SOT-23 package measures approximately 2.9 mm x 1.6 mm with a pitch of 1.9 mm between center pins, making it roughly 4 times smaller in board area than an SOT-89 package; for wearable PCBs constrained to under 20 mm x 20 mm, the SOT-23 footprint allows placement of multiple 2SJ305TE85LF switches in a 1 cm² area to manage 4 or more independent power rails.

When is 2SJ305TE85LF a suitable alternative to a similar P-channel MOSFET like Toshiba SSM3J35TU for a 3.3 V load switch?

The 2SJ305TE85LF suits applications where the load current is under 100 mA at 3.3 V and gate drive is limited to -1.5 V or lower; engineers needing RDS(on) below 1 Ω at higher currents above 200 mA should instead evaluate alternatives with lower on-resistance in the same SOT-23 footprint, while the 2SJ305TE85LF remains the lower-cost choice for simple single-supply switching at 200 mW power budgets.

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AvailabilityIn Stock

Reference Price (USD)

From $0.1574

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
100+	$0.3445	$34.45
500+	$0.2631	$131.57
1000+	$0.2369	$236.91
15000+	$0.1686	$2528.70
21000+	$0.1629	$3420.48
30000+	$0.1573	$4720.50

pcs

Unit price: $0.3445 · Total: $34.45

In Stock · 24h Response · Worldwide Shipping

Direct Contact

WhatsApp Inquiry Email RFQ

Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“FindMyChip sourced our entire STM32 BOM in 48 hours when our usual distributor had 16-week lead times.”

Thomas Mueller

Hardware Lead, SensorTech GmbH, Germany

2SJ305TE85LF Toshiba MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock

What are the key features of 2SJ305TE85LF?

What is 2SJ305TE85LF used for?

Compliance & Regulatory

Where can I find the 2SJ305TE85LF datasheet?

What are equivalent replacements for 2SJ305TE85LF?

Frequently Asked Questions

What gate threshold voltage does the 2SJ305TE85LF require, and can it be driven directly from a 1.8 V microcontroller?

For a battery-powered IoT sensor switch rated at 50 mA, what power is dissipated in the 2SJ305TE85LF channel at full load?

How does the 2SJ305TE85LF's SOT-23 package compare to larger SMT packages for PCB layout in wearable devices?

When is 2SJ305TE85LF a suitable alternative to a similar P-channel MOSFET like Toshiba SSM3J35TU for a 3.3 V load switch?

Related Guides

C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC

STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security

STM32H753VIT6 High-Performance MCU Design Guide

STM32H753ZIT6 Selection Guide for High-Performance Embedded Systems

Why Buy from FindMyChip

About Toshiba

More from Toshiba

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