1SS294(F) Toshiba Diode (SOT23 (3-Pin)) In Stock
The Toshiba 1SS294(F) is a single silicon general-purpose rectifier diode in a compact SC-59 (SOT-23) 3-pin surface mount package, rated at 100 mA forward current and 0.6 V maximum forward voltage. It is suited for signal rectification, freewheeling, and reverse polarity protection in low-power consumer electronics and portable device designs.
- Manufacturer
- Toshiba
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 1SS294(F) Datasheet PDF
- Category
- Diode
- Temp Range
- ?°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of 1SS294(F)?
- Single silicon rectifier diode with 100 mA maximum forward current and 0.6 V forward voltage drop for low-loss signal rectification
- SC-59 (TO-236MOD) SMT package occupies minimal PCB area for space-constrained portable and wearable electronics designs
- General-purpose silicon construction suitable for freewheeling, reverse polarity protection, and signal clipping at frequencies up to several hundred MHz
What is 1SS294(F) used for?
The 1SS294(F) is used in portable consumer electronics such as smartphones, tablets, and wearable devices where low forward voltage drop rectification or signal protection is needed in a tiny SC-59 SMT footprint. It also serves as a freewheeling diode across inductive loads in relay driver circuits and as a reverse polarity protection element in battery-powered embedded systems operating at up to 100 mA continuous current. Signal conditioning circuits in audio equipment and sensor interfaces use the 1SS294(F) for small-signal rectification and clipping at low voltage levels.
What are the specifications of 1SS294(F)?
| YTEOL | 6 |
| Application | GENERAL PURPOSE |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 0.6V |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Output Current-Max | 0.1A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Dissipation-Max | 0.15W |
| Reference Standard | AEC-Q101 |
| Rep Pk Reverse Voltage-Max | 45V |
| Reverse Current-Max | 5 µA |
| Reverse Test Voltage | 40V |
| Surface Mount | YES |
| Technology | SCHOTTKY |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.70 |
Where can I find the 1SS294(F) datasheet?
1SS294(F) Datasheet DownloadOfficial datasheet from Toshiba
What are equivalent replacements for 1SS294(F)?
Compatible alternatives and drop-in replacements for 1SS294(F):
suggested
suggested
Frequently Asked Questions
What forward voltage and maximum current rating does the 1SS294(F) support for signal rectification circuits?
The Toshiba 1SS294(F) has a maximum forward voltage (VF) of 0.6 V at its rated forward current, with a maximum continuous forward current of 100 mA. This low forward drop makes it suitable for small-signal rectification where minimizing conduction loss is important, such as in envelope detectors or precision half-wave rectifiers operating at currents from 1 mA to 100 mA. Its silicon junction also limits the reverse current to very low nanoampere levels at applied reverse voltages within its rated peak inverse voltage.
Which portable electronics and IoT designs benefit most from the 1SS294(F)'s SC-59 SOT-23 footprint compared to larger axial diode packages?
The SC-59 (TO-236MOD) package of the 1SS294(F) measures approximately 1.6 mm x 1.6 mm, making it about 10 times smaller in PCB footprint than a standard DO-35 axial diode. Portable IoT sensor nodes, fitness trackers, and TWS earbud charging circuits benefit from this miniaturization by fitting reverse polarity protection or freewheeling diodes in board areas too tight for DO-41 or SMA packages. The SMT form factor is also compatible with automated pick-and-place assembly on panels with 50 to 100 units per panel, reducing per-unit assembly cost for high-volume consumer products.
When is the 1SS294(F) a suitable alternative to a Schottky diode for low-voltage battery protection circuits?
In circuits where the supply voltage is above 3.3 V and the forward voltage drop of 0.6 V is acceptable, the 1SS294(F) silicon rectifier can replace a Schottky diode for reverse polarity protection at up to 100 mA, at a typically lower cost per unit. However, when supply voltage is 1.8 V or lower, the 0.6 V drop of the 1SS294(F) represents a significant fraction of available voltage, and a Schottky diode with a 0.2 V to 0.3 V forward drop would be the preferred choice. The 1SS294(F) offers advantages in leakage current over many Schottky alternatives, making it preferable in ultra-low-power sleep-mode circuits where nanoampere reverse leakage matters more than forward voltage drop.
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