1N5819RLGAlternatives & Equivalent Parts

About 1N5819RLG

1N5819RLG is a Diode component manufactured by ON Semiconductor. It comes in a Diodes, Axial Diameter Horizontal Mounting package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

Parameter1N5819RLGSourceLR1F1K8LR1F5K6RLB0912-470KLNRB-XW101M450V18X35FIRF3205PBF
ManufacturerON SemiconductorTE ConnectivityTE ConnectivityBournsNIC ComponentsInfineon
Package TypeDiodes, Axial Diameter Horizontal MountingResistors, Axial Diameter Horizontal MountingResistors, Axial Diameter Horizontal MountingOtherCapacitor, Polarized Radial DiameterTransistor Outline, Vertical
Pin Count222223
Temperature Range-65.0°C ~ 125.0°C-55.0°C ~ 155.0°C-55.0°C ~ 155.0°C-40.0°C ~ 125.0°C-25.0°C ~ 105.0°C-55.0°C ~ 175.0°C
Price$0.0837$0.0156$0.0134$0.1101—$0.4320
StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVETRANSFERREDACTIVEACTIVEOBSOLETEACTIVE
Electrical Parameters
Pbfree CodeYesYesYesYes——
Manufacturer Package Code59-10—————
YTEOL5.89—86.2505.1
Additional FeatureFREE WHEELING DIODE, LOW POWER LOSSSEMI PRECISIONPRECISION——AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
ApplicationEFFICIENCY—————
Breakdown Voltage-Min40 V—————
Case ConnectionISOLATED————DRAIN
ConfigurationSINGLE————SINGLE WITH BUILT-IN DIODE
Diode Element MaterialSILICON—————
Diode TypeRECTIFIER DIODE—————
Forward Voltage-Max (VF)0.9 V—————
JEDEC-95 CodeDO-41————TO-220AB
JESD-30 CodeO-PALF-W2————R-PSFM-T3
JESD-609 Codee3e3e3e3—e3
Non-rep Pk Forward Current-Max25 A—————
Number of Elements1————1
Number of Phases1—————
Output Current-Max1 A—————
Package Body MaterialPLASTIC/EPOXY————PLASTIC/EPOXY
Package ShapeROUNDTUBULAR PACKAGETUBULAR PACKAGE—CYLINDRICAL PACKAGERECTANGULAR
Package StyleLONG FORM—AxialRadialRadialFLANGE MOUNT
Qualification StatusNot Qualified————Not Qualified
Rep Pk Reverse Voltage-Max40 V—————
Reverse Current-Max1000 µA—————
Reverse Test Voltage40 V—————
Surface MountNONONONONONO
TechnologySCHOTTKYTHIN FILMTHIN FILM———
Terminal FinishMatte Tin (Sn) - annealedTin (Sn)Tin (Sn)Matte Tin (Sn)—Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal FormWIRE————THROUGH-HOLE
Terminal PositionAXIAL————SINGLE
Reach Compliance Code—CompliantUnknown—Compliant—
Factory Lead Time—11 Weeks, 1 Day11 Weeks, 1 Day14 Weeks——
Mounting Feature—THROUGH HOLE MOUNTTHROUGH HOLE MOUNT—THROUGH HOLE MOUNT—
Packing Method—AMMO PACKAMMO PACKBulkBULK—
Rated Power Dissipation (P)—0.6 W0.6 W———
Rated Temperature—70 °C70 °C———
Resistance—1800 Ω5600 Ω———
Resistor Type—FIXED RESISTORFIXED RESISTOR———
Temperature Coefficient—50 ppm/°C50 ppm/°C———
Terminal Shape—WIREWIREWIREWIRE—
Tolerance—1%1%10%——
Working Voltage—350 V350 V———
Configuration Features: Number of Resistors 1—Dimensions: Passive Component Dimensions 6.2 x 2.3 MMDimensions: Passive Component Dimensions 6.2 x 2.3 MM———
Power Rating .6 WATT—Operating Voltage 350 V————
Resistance Class 1kΩ – 1MΩ—Packaging Features: Packaging Method Ammo PackedPackaging Features: Packaging Method Ammo Packed———
Construction——TubularTubular——
Lead Diameter——0.55 mm0.65 mm——
Package Diameter——2.3 mm8.7 mm——
Package Length——6.2 mm10 mm——
Physical Dimension——6.2mm x 2.3mm———
Passive Component Tolerance 1 PCT——Resistance Value 5.6K OHM———
Element Type Thin Film——Termination Features: Number of Terminations 2———
Core Material———FERRITE——
DC Resistance———0.17 Ω——
Inductance-Nom (L)———47 µH——
Inductor Application———RF INDUCTOR——
Inductor Type———GENERAL PURPOSE INDUCTOR——
Lead Spacing———5 mm——
Number of Functions———1——
Rated Current-Max———1.5 A——
Self Resonance Frequency———11 MHz——
Shape/Size Description———TUBULAR PACKAGE——
Shielded———NO——
Terminal Placement———RADIAL——
Test Frequency———0.001 MHz——
Capacitance————100 µF—
Capacitor Type————ALUMINUM ELECTROLYTIC CAPACITOR—
Diameter————18 mm—
Dielectric Material————ALUMINUM (WET)—
ESR————4150 mΩ—
Leakage Current————0.6364 mA—
Negative Tolerance————20%—
Polarity————POLARIZED—
Positive Tolerance————20%—
Rated (DC) Voltage (URdc)————450 V—
Ripple Current————740 mA—
Tan Delta————0.25—
Terminal Pitch————7.5 mm—
Avalanche Energy Rating (Eas)—————264 mJ
DS Breakdown Voltage-Min—————55 V
Drain Current-Max (ID)—————75 A
Drain-source On Resistance-Max—————0.008 Ω
FET Technology—————METAL-OXIDE SEMICONDUCTOR
Operating Mode—————ENHANCEMENT MODE
Polarity/Channel Type—————N-CHANNEL
Power Dissipation-Max (Abs)—————200 W
Pulsed Drain Current-Max (IDM)—————390 A
Transistor Application—————SWITCHING
Transistor Element Material—————SILICON

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 5 alternatives for 1N5819RLG — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for 1N5819RLG is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating 1N5819RLG replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to 1N5819RLG?

Known equivalents for 1N5819RLG include LR1F1K8, LR1F5K6, RLB0912-470KL. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of 1N5819RLG?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify 1N5819RLG alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.