11AA080T-I/MNY Microchip Integrated Circuit (Small Outline No-lead) In Stock
The Microchip 11AA080T-I/MNY is an 8Kbit (1K x 8) single-wire serial EEPROM operating at 1.8V with up to 1MHz clock speed and 1,000,000 write/erase endurance cycles in a compact TDFN-8 package. It features 200-year minimum data retention and is RoHS-compliant with a 6-week standard factory lead time. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.
- Manufacturer
- Microchip
- Package
- Small Outline No-lead
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- 11AA080T-I/MNY Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.3000(MOQ 1)
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 8Kbit (1K x 8) single-wire serial EEPROM with 1.8V low-voltage operation ideal for ultra-low-power embedded applications
- Up to 1MHz maximum clock frequency providing fast single-wire data transfers for time-sensitive embedded storage tasks
- 1,000,000 write/erase cycle endurance with 200-year minimum data retention ensuring long-term reliability in harsh environments
- Ultra-compact TDFN-8 package enabling high-density PCB integration in space-constrained wearable and IoT designs
Applications
The 11AA080T-I/MNY is well suited for storing configuration data, calibration parameters, and small data logs in low-power IoT sensor nodes, wearables, and portable medical devices requiring minimal PCB footprint. Its 1.8V operation and single-wire interface simplify connectivity to low-voltage microcontrollers and SoCs in battery-powered systems. It is also used in smart metering, RFID tags, and industrial sensors where compact non-volatile memory with high endurance is essential.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | TDFN-8 |
| Factory Lead Time | 6Weeks |
| YTEOL | 9 |
| Clock Frequency-Max (fCLK) | 1MHz |
| Data Retention Time-Min | 200 |
| Endurance | 1000000 Write/Erase Cycles |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e4 |
| Memory Density | 8192bit |
| Memory IC Type | EEPROM |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 1024words |
| Number of Words Code | 1000 |
| Operating Mode | SYNCHRONOUS |
| Organization | 1KX8 |
| Output Characteristics | TOTEM POLE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOLCC8,.12,20 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| Parallel/Serial | SERIAL |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Ready/Busy | NO |
| Reverse Pinout | NO |
| Screening Level | AEC-Q100 |
| Serial Bus Type | 1-WIRE |
| Standby Current-Max | 0.000005A |
| Supply Current-Max | 0.005mA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 1.8V |
| Supply Voltage-Nom (Vsup) | 5V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Toggle Bit | NO |
| Write Cycle Time-Max (tWC) | 10ms |
| Write Protection | SOFTWARE |
| Package | Small Outline No-lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.51 |
| Country of Origin | Thailand |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the memory capacity and interface of the 11AA080T-I/MNY?
The 11AA080T-I/MNY provides 8Kbits of EEPROM organized as 1K x 8-bit words, accessible via a single-wire serial interface at up to 1MHz clock frequency, making it easy to connect to microcontrollers using only a single I/O pin.
What is the supply voltage range and power consumption of the 11AA080T-I/MNY?
The 11AA080T-I/MNY operates at 1.8V, making it suitable for low-voltage and battery-powered designs such as wearables, IoT devices, and portable instruments where minimizing power consumption is a priority.
What are the write endurance and data retention specifications?
The 11AA080T-I/MNY is rated for up to 1,000,000 write/erase cycles per byte and a minimum data retention of 200 years, ensuring reliable long-term non-volatile storage of configuration data and calibration parameters in demanding applications.
What package does the 11AA080T-I/MNY use and is it RoHS compliant?
The 11AA080T-I/MNY is housed in a TDFN-8 package (JESD-30 code R-PDSO-N8), offering an extremely compact footprint for space-constrained designs. It carries JESD-609 code e4, confirming full RoHS compliance and lead-free construction.
What are typical applications for the 11AA080T-I/MNY?
The 11AA080T-I/MNY is commonly used in IoT sensor nodes, wearable electronics, smart meters, portable medical devices, and industrial instruments where small capacity non-volatile memory with a minimal single-wire interface, low supply voltage of 1.8V, and high endurance is required.
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Microchip is a leading electronic component manufacturer. FindMyChip sources Microchip ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3980 | $0.40 |
| 100+ | $0.3500 | $35.00 |
| 1000+ | $0.3300 | $330.00 |
| 5000+ | $0.3000 | $1500.00 |
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