Transistor

Transistor components are essential building blocks in modern electronic systems. FindMyChip sources Transistor ICs from authorized China distributors with competitive pricing and reliable stock.

926 components

How to Choose Transistor Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

Popular Applications

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Factory automation, control systems, and monitoring

Automotive

In-vehicle electronics and advanced driver assistance

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Base stations, routers, and network equipment

All Transistor Components

Showing 351400 of 926

SI4413ADY-T1-E3Vishay

ROHS COMPLIANT, MS-012, SOIC-8

BC857BDW1T1GON Semiconductor

Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L; Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

BUK7575-100ANexperia

BUK7575-100A is a Transistor component by Nexperia. Key specs: Transistor Outline, Vertical, 3 pins, -55°C to 175°C. From inquiry pricing, in stock with worldwide shipping.

2SK2145-BL(TE85L,FToshiba

Use the download button to access the 2SK2145-BL(TE85L,F schematic symbol, PCB footprint, and 3D model.

2SK2731T146ROHM Semiconductor

MOSFET N-ch 30V 0.2A 2.8Ohm SOT-346 ROHM 2SK2731T146 N-channel MOSFET Transistor, 0.2 A, 30 V, 3-Pin SMT

BS170ON Semiconductor

N-channel JFET,BF245A 2mA 30V,BP

6N136S-TA1Lite-On

Use the download button to access the 6N136S-TA1 schematic symbol, PCB footprint, and 3D model.

2N7002Infineon

Use the download button to access the 2N7002 schematic symbol, PCB footprint, and 3D model.

BDP949Infineon

Use the download button to access the BDP949 schematic symbol, PCB footprint, and 3D model.

IFRP044NInternational Rectifier

IFRP044N from International Rectifier is a transistor for switching, amplification, and driver stages. Key specs include 3 pins, Transistor Outline, Vertical package, and HEXFET Power MOSFET. From quote pricing, in-stock sourcing support, worldwide shipping.

SI1480DH-T1-GE3Vishay

SC-70, SOT-363, 6 PIN

Si1401EDHVishay

Si1401EDH from Vishay is a transistor. Key specs include 6 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

IRFP460APBFInternational Rectifier

Power MOSFET

IRFZ44nInternational Rectifier

Power MOSFET

SSM6N39TUToshiba

SSM6N39TU from Toshiba is a transistor. Key specs include 16 Weeks, DS Breakdown Voltage-Min: 20 V, Drain Current-Max (ID): 1.6 A. From inquiry pricing, buyers can request stock with worldwide shipping.

BAT54CW,115Nexperia

Schottky barrier diodes

IRFML8244TRPBFInternational Rectifier

SOT-23, 3 PIN

NTP8G206NGON Semiconductor

TO-220, 3 PIN

BUK98150-55ANexperia

FET, NXP, BUK98150-55A NXP BUK98150-55A N-channel MOSFET Transistor, 5.5 A, 55 V, 4-Pin SOT-223

AQW610SPanasonic

Use the download button to access the AQW610S schematic symbol, PCB footprint, and 3D model.

TSM2301CXTaiwan Semiconductor

TSM2301CX from Taiwan Semiconductor is a transistor. Key specs include DS Breakdown Voltage-Min: 20 V, Drain Current-Max (ID): 2.3 A, Drain-source On Resistance-Max: 0.13 Ohm. From inquiry pricing, buyers can request stock with worldwide shipping.

BUZ91ASIEMENS

BUZ91A from SIEMENS is a transistor. Key specs include 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

LTV-847Lite-On

ROHS COMPLIANT, DIP-16

TSM2310CX RFTaiwan Semiconductor

TSM2310CX RF from Taiwan Semiconductor is a transistor. Key specs include 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

MMBT3906ON Semiconductor

SOT-23, 3 PIN

ILD621Vishay

Use the download button to access the ILD621 schematic symbol, PCB footprint, and 3D model.

FQT4N25TFON Semiconductor

Low gate charge ( Typ. 4.3nC); 0.83A, 250V, RDS(on) = 1.75Ω(Max.) @VGS = 10 V, ID = 0.415A; Low Crss ( Typ. 4.8pF)

IRFD9110PBFVishay

Vishay IRFD9110PBF P-channel MOSFET Transistor, 0.7 A, 100 V, 4-pin HVMDIP, HexDIP

ECH8651R-TL-HXON Semiconductor

MOSFET NCH+NCH 2.5V DRIVE SERIES

BC847AT-7-FDiodes Inc.

Use the download button to access the BC847AT-7-F schematic symbol, PCB footprint, and 3D model.

BC 847C E6327Infineon

BC 847C E6327 from Infineon is a transistor. Key specs include 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

BC847A-7-FDiodes Inc.

Use the download button to access the BC847A-7-F schematic symbol, PCB footprint, and 3D model.

NDT3055LON Semiconductor

High power and current handling capability in a widely used surface mount package.; 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. ; Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. ; High density cell design for extremely low RDS(ON).

BCP53T1GON Semiconductor

High Current: 1.5 Amps; NPN Complement is BCP56; The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; Available in 12 mm Tape and Reel Use BCP53T1G to order the 7 inch/1000 unit reel. Use BCP53T3G to order the 13 inch/4000 unit reel.; Device Marking: BCP53 = AH BCP53-10 = AH-10 BCP53-16 = AH-16; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

4N35-X009TVishay

DIP-6

CNY17-3Vishay

DIP-6

TIP30CGON Semiconductor

TIP30CG from ON Semiconductor is a transistor. Key specs include 221A, Collector Current-Max (IC): 1 A, Collector-Emitter Voltage-Max: 100 V. From inquiry pricing, buyers can request stock with worldwide shipping.

VEC2616-TL-HON Semiconductor

VEC2616-TL-H from ON Semiconductor is a transistor. Key specs include 318AH, 4 Weeks, DS Breakdown Voltage-Min: 60 V. From inquiry pricing, buyers can request stock with worldwide shipping.

TIP147GON Semiconductor

Monolithic Construction with Built-In Base-Emitter Shunt Resistor; High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) TIP142, TIP147; Pb-Free Packages are Available

TIP122GON Semiconductor

Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

TIP41BGON Semiconductor

Collector-Emitter Saturation Voltage - VCE(sat) = 1.5 V (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3 MHz (min) @ IC = 500 mAdc; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP41A, TIP42A =80 Vdc (min) - TIP41B, TIP42B =100 Vdc (min) - TIP41C, TIP42C; Compact TO-220 AB Package; These are Pb-Free Packages

TIP41CGON Semiconductor

Collector-Emitter Saturation Voltage - VCE(sat) = 1.5 V (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3 MHz (min) @ IC = 500 mAdc; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP41A, TIP42A =80 Vdc (min) - TIP41B, TIP42B =100 Vdc (min) - TIP41C, TIP42C; Compact TO-220 AB Package; These are Pb-Free Packages

TIP32CGON Semiconductor

Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

TIP29CGON Semiconductor

TIP29CG from ON Semiconductor is a transistor. Key specs include 221A, 11 Weeks, Collector Current-Max (IC): 1 A. From inquiry pricing, buyers can request stock with worldwide shipping.

TIP31AGON Semiconductor

Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

TIP125GON Semiconductor

TIP125G from ON Semiconductor is a transistor. Key specs include 221A, 4 Weeks, Collector Current-Max (IC): 5 A. From inquiry pricing, buyers can request stock with worldwide shipping.

TIP32AGON Semiconductor

Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

TIG058E8-TL-HON Semiconductor

TIG058E8-TL-H from ON Semiconductor is a transistor. Key specs include 4 Weeks, 8 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

TIP120GON Semiconductor

Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

TIP127GON Semiconductor

Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

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