Integrated Circuit

Integrated Circuit components are essential building blocks in modern electronic systems. FindMyChip sources Integrated Circuit ICs from authorized China distributors with competitive pricing and reliable stock.

76,414 components

How to Choose Integrated Circuit Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All Integrated Circuit Components

Showing 1,7011,750 of 76,414

IR2132SPBFInternational Rectifier

Use the download button to access the IR2132SPBF schematic symbol, PCB footprint, and 3D model.

IR2127PBFInternational Rectifier

DIP-8

IR21271SPBFInternational Rectifier

INFINEON - IR21271SPBF - MOSFET Driver Single, High Side, 10V-20V supply, 500mA peak out, 125 Ohm output, SOIC-8

IR2121PBFInternational Rectifier

PLASTIC, DIP-8

IR2118PBFInternational Rectifier

Use the download button to access the IR2118PBF schematic symbol, PCB footprint, and 3D model.

IR2113SPBFInternational Rectifier

SOIC-16

IR2112SPBFInternational Rectifier

Use the download button to access the IR2112SPBF schematic symbol, PCB footprint, and 3D model.

IR2111SPBFInternational Rectifier

Use the download button to access the IR2111SPBF schematic symbol, PCB footprint, and 3D model.

IR2108SPBFInternational Rectifier

Use the download button to access the IR2108SPBF schematic symbol, PCB footprint, and 3D model.

IR2108PBFInternational Rectifier

Use the download button to access the IR2108PBF schematic symbol, PCB footprint, and 3D model.

IR21084SPBFInternational Rectifier

International Rectifier IR21084SPBF, Dual MOSFET Power Driver 350mA Half Bridge, 10 → 20 V, 14-Pin SOIC

IR2103SPBFInternational Rectifier

International Rectifier IR2103SPBF, Dual MOSFET Power Driver, 360mA Half Bridge, 10 → 20 V, Non-Inverting, 8-Pin

IR2102SPBFInternational Rectifier

Use the download button to access the IR2102SPBF schematic symbol, PCB footprint, and 3D model.

AUIRS2184SInternational Rectifier

International Rectifier AUIRS2184S, Dual MOSFET Power Driver, 2.3A Half Bridge, 10 → 20 V, 8-Pin SOIC

MPL3115A2NXP

MPL3115A2, Absolute Pressure Sensor, 110kPa 0.9 → 1 V Output, 8-Pin LGA

MPC17C724EPNXP

3 X 3 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, PLASTIC, QFN-16

MMA3201KEGNXP

Freescale MMA3201KEG 2-Axis Accelerometer IC, 360 → 440 Hz 5V 20-Pin SOIC

UC3843BVD1R2GON Semiconductor

Latching PWM for Cycle-By-Cycle Current Limiting; Oscillator Frequency Guaranteed at 250 kHz; Low Startup and Operating Current; Trimmed Oscillator for Precise Frequency Control; Internally Trimmed Reference with Undervoltage Lockout; Undervoltage Lockout with Hysteresis; Automatic Feed Forward Compensation; High Current Totem Pole Output; Current Mode Operation to 500 kHz; Pb-Free Packages are Available

TL431BVDR2GON Semiconductor

Low Output Noise Voltage; Programmable Output Voltage to 36 V; Voltage Reference Tolerance: +/- 0.4%, Typ @ 25°C (TL431B); Equivalent Full-Range Temperature Coefficient of 50 ppm/ °C Typical; Low Dynamic Output Impedance, 0.22 W Typical; Temperature Compensated for Operation over Full Rated Operating Temperature Range; Sink Current Capability of 1.0 mA to 100 mA; Pb-Free Packages are Available

NIS5132MN1TXGON Semiconductor

Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 9 V to 18 V Input Range • 44 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) • ESD Ratings: Human Body Model (HBM); 2000 V Machine Model (MM); 200 V • These Devices are Pb−Free and are RoHS Compliant

TL431BVDGON Semiconductor

Use the download button to access the TL431BVDG schematic symbol, PCB footprint, and 3D model.

SZBZX84C3V6LT3GON Semiconductor

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

SMS15T1GON Semiconductor

Pb-Free Packages are Available; SC-74 Package Allows Four Separate Unidirectional Configurations; Peak Power – 350 Watts, 8 x 20 µS; ESD Rating of Class N (Exceeding 25 kV) per the Human Body Model; ESD Rating: IEC 61000–4–2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000–4–4 (EFT) 40 Amps (5/50 ns) IEC 61000–4–5 (lighting) 23 Amps (8/20 µ s); UL Flammability Rating of 94V–0

SMA3107-TL-EON Semiconductor

Use the download button to access the SMA3107-TL-E schematic symbol, PCB footprint, and 3D model.

SL15T1GON Semiconductor

TVS Diode in Series with a Compensating Diode Offers < 5 pF Capacitance; ESD Protection Meeting IEC 61000–4–2, 4–4, 4–5; Peak Power Rating of 300 Watts, 8 x 20 µ s; Bi–Direction Protection Can Be Achieved By Using Two Devices; Flammability Rating UL 94V–0; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; Package designed for optimal automated

SE5532AD8GON Semiconductor

SE5532AD8G is a ON Semiconductor integrated circuit for PCB-level interconnects, replacement sourcing, or production BOMs. Key specs include 8 pins, -55°C to 125°C operating range, Small Outline Packages. From inquiry pricing, in stock sourcing, and.

SB10-05P-TD-EON Semiconductor

Low forward voltage (VF max=0.55V); Short Reverse Recovery Time (trr max=10ns); Low Switching Noise; Low Leakage Current and High Reliability Due to Reliable Planar Structure; Pb-Free and RoHS Compliance

SA575DTBGON Semiconductor

Operating Voltage Range from 3.0 V to 7.0 V; Reference Voltage of 100 mVRMS = 0 dB; One Dedicated Summing Op Amp Per Channel and Two Extra Uncommitted Op Amps; 600 Ω Drive Capability; Single or Split Supply Operation; Wide Input/Output Swing Capability; 3000 V ESD Protection

NLV17SZ74USGON Semiconductor

SOP-8

NLU2G17CMX1TCGON Semiconductor

ON Semiconductor NLU2G17CMX1TCG, Dual, Schmitt Trigger Buffer, CMOS, Non-Inverting, 1.65 → 5.5 V, 6-Pin ULLGA

NLAS3158MNR2GON Semiconductor

QFN-12

NL7WB66USGON Semiconductor

US-8

NL7SZ57DFT2GON Semiconductor

Designed for 1.65 V to 5.5 V Vcc Operation; High Speed: tPD = 3.2 ns (Typ) @ VCC = 5.0 V; Low Power Dissipation: ICC = 1 A (Maximum) at TA = 25C; Power Down Protection Provided on inputs; Balanced Propagation Delays; Overvoltage Tolerant (OVT) Input and Output Pins; Ultra-Small Package; This is a Pb-Free Device

NL37WZ07USGON Semiconductor

Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V; Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs, Outputs; LVTTL Compatible – Interface Capability with 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Output Sink Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FET = 72; Pb-Free Package is Available

NL37WZ04USGON Semiconductor

Designed for 1.65 V to 5.5 V VCC Operation; Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible – Interface Capability With 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FETs = 72

NL27WZ16DTT1GON Semiconductor

ON Semiconductor NL27WZ16DTT1G, Dual, Buffer, CMOS, Single Ended, 1.65 → 5.5 V, 6-Pin TSOP

NL27WZ14DFT2GON Semiconductor

Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability with 5 V TTL Logic with VCC=3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current (10 ?A) Substantially Reduces System Power Requirements; Current Drive Capability is 24 mA at the Outputs; Chip Complexity: FET = 72; Pb-Free Packages are Available

NL17SZ32XV5T2GON Semiconductor

Tiny SOT-353 and SOT-553 Packages; 2.4 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ32P5X, TC7SZ32FU, and TC7SZ32AFE; Chip Complexity: FETs = <100; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available; Designed for 1.65 V to 5.5 V Vcc Operation

NL17SZ17XV5T2GON Semiconductor

Wide Operating Vcc Range; Tiny SC70-5/SC-88A Package; Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available

NL17SZ08XV5T2GON Semiconductor

Tiny SOT-353 and SOT-553 Packages; 2.7 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-voltage tolerant Inputs; Pin For Pin with NC7SZ08P5X, TC7SZ08FU and TC7SZ08AFE; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC operation; Pb-Free Packages are Available; Wide Operating Vcc Range

NE592D8R2GON Semiconductor

120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available

NE592D14R2GON Semiconductor

120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available

NCV8606MN28T2GON Semiconductor

Last Shipments - LDO Regulator, 500 mA, Low Dropout

NCV8570BSN18T1GON Semiconductor

Operating Input Voltage Range: 2.5V to 5.5V; High Ripple Rejection Ratio: Typ. 82dB @ 1kHz; Ultra-Low Output Noise: Typ. 10µVrms from 10Hz to 100kHz; Stable with output capacitors as low as 1µF; Active Discharge; Output Voltage Options: 1.8V, 2.8V, 3.0V, 3.3V; Low Sleep Mode Current: Max. 1A; Current Limit Protection; Thermal Shutdown Protection; Output Current Limit: Min. 200mA; No-Load Ground Current of Typ. 70µA; Full-Load Ground Current of Typ. 75µA; Output voltage accuracy: ±2.5% over Load/Line Regulat

NCV7719DQR2GON Semiconductor

Low Quiescent Current Sleep Mode; HighSide and LowSide Drivers Connected in a HalfBridge Configuration; Integrated Freewheeling Protection (LS and HS); 0.55 A Peak Current; RDS(on) = 1 ohm (typ); Overcurrent Protection; Overtemperature Protection; Under Load Detection; Discriminated Fault Reporting; 16Bit Frame Detection; Daisy Chain Compatible with Multiple of 8 bit Devices; 5 MHz SPI Control; Compliance with 5 V and 3. 3 V Systems; Undervoltage and Overvoltage Lockout

NCV7708EDWR2GON Semiconductor

SOIC-28

NCV7351D1ER2GON Semiconductor

High Speed (up to 1 Mbps); Compatible with the ISO 11898−2 Standard; VIO Pin on NCV7351D13 Version Allowing Direct Interfacing with 3V to 5V Microcontrollers; EN Pin on NCV7351D1E Version Allowing Switching the transceiver to a Very Low Current OFF Mode; Excellent Electromagnetic Susceptibility (EMS) Level Over Full Frequency Range. Very Low Electromagnetic Emissions (EME) Low EME also Without Common Mode (CM) Choke; Bus Pins Protected Against >15 kV System ESD Pulses; Transmit Data (TxD) Dominant Time−out

NCV7351D13R2GON Semiconductor

High Speed (up to 1 Mbps); Compatible with the ISO 11898−2 Standard; VIO Pin on NCV7351D13 Version Allowing Direct Interfacing with 3V to 5V Microcontrollers; EN Pin on NCV7351D1E Version Allowing Switching the transceiver to a Very Low Current OFF Mode; Excellent Electromagnetic Susceptibility (EMS) Level Over Full Frequency Range. Very Low Electromagnetic Emissions (EME) Low EME also Without Common Mode (CM) Choke; Bus Pins Protected Against >15 kV System ESD Pulses; Transmit Data (TxD) Dominant Time−out

NCV7349D10R2GON Semiconductor

Low Electromagnetic Emission (EME) and Extremely High Electromagnetic Immunity; Compatible with the ISO 11898−5 Standard; High Speed (up to 1 Mbps); No Disturbance of the Bus Lines with an Un−powered Node; Transmit Data (TxD) Dominant Time−out Function; Very Low Current Standby Mode with Wake−up via the Bus; Very Low EME without Common−mode (CM) Choke; Under All Supply Conditions the Chip Behaves Predictably; Very High ESD Robustness of Bus Pins, >10 kV System ESD Pulses; Thermal Protection; Bus Pins Short

NCV7341D20R2GON Semiconductor

SOIC-14

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